• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.953-955
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• 1999

The (1-x)$MgTiO_3-SrTiO_3$ (x=0. 0.1, 0.2, 0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and BT-TGA. Increasing the sintering temperature from $1300^{\circ}C$ to $1600^{\circ}C$, second phase was decreased and grain size was increased. The average gram size of the 0.8$MgTiO_3-SrTiO_3$ ceramics sintered at $1600^{\circ}C$ were $3.61{\mu}m$.

• 전자공학회논문지B
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• 제33B권7호
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• pp.70-79
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• 1996

To increase the functionality of the memories, previous studies have deifned faults models and proposed functional testing algorithms with low complexity. Although conventional testing depended strongly on functional (voltage) testing method, it couldn't detect short and open defects caused by gate oxide short and spot defect which can afect memory reliability. Therefore, IDDQ (quiescent power supply current) testing is required to detect defects and thus can obtain high reliability. In this paper, we consider resistive shorts on gate-source, gate-drain, and drain-source as well as opens in mOS FET and observe behavior of the memory by analyzing voltage at storge nodes of the memory and IDDQ resulting from PSPICE simulation. Finally, using this behavioral analysis, we propose a linear testing algorithm of complexity O(N) which can be applicable to both functional testing and IDDQ testing simultaneously to obtain high functionality and reliability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.304-307
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• 1999

The Mg($_{1-x}$ )S $r_{x}$Ti $O_3$(x=0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with calcining temperature and composition ratio by XRD and DT-TGA. Increasing the calcining temperature from 80$0^{\circ}C$ to 100$0^{\circ}C$, second phase was decreased and average particle size was increased. The SrTi $O_3$ ceramics of calcined at 100$0^{\circ}C$ had a structure of polycrystalline perovskite without the secondary phases. The average particle size of the $Mg_{0.9}$S $r_{0.1}$Ti $O_3$ ceramics calcined at 100$0^{\circ}C$ were 0.67${\mu}{\textrm}{m}$..>......

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2001년도 춘계학술대회 논문집
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• pp.187-191
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• 2001

In the paper, an approach to the development of the selective catalytic reduction process of NOx is presented. The reduction process can be efficiently controlled using a conventional combination of feed-forward and feed-back control structures. The aim of this paper is to test and verify an approach to the SCR process which is based on an industrial pilot plant of combustion and nitric oxide formation. The systems are based on measurements of a NOx removal ratio and the fuel flow rate, and NH$_3$slip which are usually available as a part of de-NOx control system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.429-432
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• 1987

A new LOCOS (Local Oxidation of Silicon) process using a thin nitride film directly deposited on the silicon substrate by LPCVD has been developed in order to reduce the bird's beak length. SEM studies showed that nitride thickness of 50nm can decrease the bird's beak length down to 0.2um with 450nm field oxide. No crystalline defects are observed around the bird's beak after the Wright etch. A 30% improvement in current density was obtained when this new method was applied to MOS transistors (W/L*2.9/20.4) compared to conventional LOCOS process (bird's beak length=0.7um). Other various electrical parameters improved by this new simple LOCOS process are reported in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1355-1356
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• 2006

The microwave dielectric properties of the $Ba_{5}Ta_{4}O_{15}$ ceramics with sintering temperature were investigated. All sample of the $Ba_{5}Ta_{4}O_{15}$ ceramics prepared by conventional mixed oxide method and sintered at $1450^{\circ}C{\sim}1575^{\circ}C$. Porosity of the $Ba_{5}Ta_{4}O_{15}$ ceramics was reduced with increasing sintering temperature. The bulk density, dielectric constant and Qualify factor increased with increasing sintering temperature. In the case of $Ba_{5}Ta_{4}O_{15}$ ceramics sintered at $1550^{\circ}C$, The bulk density, dielectric constant and quality factor were $7.31g/cm^2$ and 27.4, 30,635GHz, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1427-1429
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• 2003

The $ZnNb_2O_6$ ceramics with 3wt% CuO were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C{\sim}1075^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase($Cu_3Nb_2O_8$) was increased. In the case of $ZnNb_2O_6$+CuO(3wt%) ceramics sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor were 21.73, 19.276, respectively.

• 한국재료학회지
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• 제27권6호
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• pp.295-300
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• 2017

Aluminum-oxide($Al_2O_3$) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and $O_2$ plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, $Al_2O_3$ films were also deposited with TMA and $H_2O$ as reactants at $280^{\circ}C$. The chemical composition and microstructure of the as-deposited $Al_2O_3$ films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the $Al_2O_3$ films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both $Al_2O_3$ films.

• 한국재료학회지
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• 제19권7호
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• pp.349-355
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• 2009

Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.