• Journal of Power Electronics
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• v.19 no.1
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• pp.58-67
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• 2019

This study presents a new portable eight-output light emitting diode (LED) driver. The eight output-channels are divided into two equal groups, and their output powers can be controlled individually by three active switches. In addition, a simple capacitor-based passive current balancing circuit (CBC) is employed in each port to guarantee that the currents of the four LEDs are the same. When compared with the conventionally used separate two-output isolated converters, the proposed one uses one less active switch. Moreover, zero-voltage-switching (ZVS) is achieved, which improves the power efficiency of the driver. Finally, a highly compact prototype is built, which can reach an efficiency of 94.6%.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.157-160
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• 2021

In this paper, a 20W class multi-output QR flyback converter for auxiliary power supply was designed to stabilize 4 output voltages, and the efficiency and load characteristics were compared and analyzed. It was checked if each output affects other output characteristics through experiment. As a result, the experimental circuit reached a high efficiency of 82.5% or more at a load power of over 20W, and the maximum power loss was 2.6W. Consequently, it was confirmed that all of 4 output voltages of the multi-output QR flyback converter constructed in this paper were stabilized within 0.5% in full-load range, and each output was independently controlled in an electrically isolated state.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.238-242
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• 2004

The paper describes an automatic frequency control current-fed inverter for forging applications. The IGBT in series with diodes as its switching devices in the inverter circuit which is of full-bridge type. The operating frequency is automatically tracked to maintain a small constant leading phase angle when load parameters change. The load voltage is controlled to protect the switches. The output power can be adjusted by varying the input current from phase controlled rectifiers which is a part of current source. The system has been operated at 15-17 kHz. The output power transferred to the load is 1,595 watts. It can heat the steel work pieces with 15 mm diameter and 120 mm long from room temperature to approximately 1100 $^{\circ}C$ within 20 seconds with 0.97 leading power factor on the input side.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.207-210
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• 2002

We had designed thermally controlled superconducting switches using a general nonlinear optimized algorithm with constraints and tested its performance. Objective function was to minimize the total volume of the superconducting switch. And constraints were to have designed resistance in normal status and temperature. In order to compare performance of the optimized superconducting switch, we made another one which had geometrically different parameters but had same structure and resistance value when the superconductor part is normal status by heater. Objective function converged very rapidly. As result, volume of the adiabatic part and total volume of the switch were reduced to more than 70% and 30% respectively. Also, even if same heater power was supplied with NiCr wire heater, the optimized superconducting switch had very fast On-OFF switching performance comparing with unoptimized switch.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.341-344
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• 1991

Current controlled pulse width modulation(PWM) for voltage source inverter(VSI) is one of the control method which controls the current directly so that we can perform vector control because it reduces the orders of differential equations of the induction machine. This paper propose a Fuzzy current controlled PWM which properly minimize a current ripple using Fuzzy theory in a constant switching frequency. This technique is applied to an electrical drive system with an induction machine(IM) by simulation. By comparison with the known classical method such as ramp comparison, hysteresis band method, our contribution shows the better performances.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.201-203
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• 2003

This paper presents a simple electronic stater for single phase induction motor(SPIM). To obtain a starting torque, the phase angle of the auxiliary winding is controlled using simple gate trigger control circuit. Because of this electronic stater circuit consists of some passive element and switching device, it is simple and robust. The experimental result shows some good results, and verifies the proposed electronic starter.

• Journal of Electrical Engineering and Technology
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• v.10 no.2
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• pp.529-538
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• 2015

Due to the high efficiency and compact mechanical structure, direct drive variable speed generators are used for power conversion in wind turbines. The wind energy conversion system (WECS) considered in this paper consists of a permanent magnet synchronous generator (PMSG), uncontrolled rectifier, dc-dc boost converter controlled with maximum power point tracking (MPPT) and adaptive hysteresis controlled voltage source inverter (VSI). For high utilization of the converter's power capability and stabilizing voltage and power flow, constant DC-link voltage is essential. Step and search MPPT algorithm which senses the rectified voltage ($V_{DC}$) alone and controls the same is used to effectively maximize the output power. The adaptive hysteresis band current control is characterized by fast dynamic response and constant switching frequency. With MPPT and adaptive hysteresis band current control in VSI, the DC link voltage is maintained constant under variable wind speeds and transient grid currents respectively.

• Journal of the Korean Society of Industry Convergence
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• v.21 no.4
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• pp.149-158
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• 2018

With the propagation and spread of the new regeneration energy and increase in electricity demand, power systems tend to be decentralized, and accordingly, the use of a power system stabilizer tends to expand for the stabilization of the distribution system. Thus, typical power system stabilizer, Static Var Compensator (SVC) is developed on a variety of topologies. In addition, the trend of technology leads from SVC to Static Synchronous Compensator(STATCOM) technology development. Recently, to overcome STATCOM's conversion losses and economic disadvantages, studies of a hybrid method using STATCOM and SVC in parallel have actively been conducted. This study proposes a new Soft-Step Switching method to limit inrush current problematic in Thyristor Controlled Capacitor (TCC) method in SVC function. In addition, to reduce Statcom's capacity, groups of reactive power compensation reactor and condenser for SVC were designed.