• Journal of Mechanical Science and Technology
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• 제20권9호
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• pp.1449-1458
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• 2006

Controlled Auto-ignition (CAI) combustion processes can be broadly divided between a CAI process that is applied to four-cycle engines and a CAI process that is applied to two-cycle engines. The former process is generally referred to as Homogeneous Charge Compression Ignition (HCCI) combustion and the later process as Active Thermo-Atmosphere Combustion (ATAC) The region of stable engine operation differs greatly between these two processes, and it is thought that the elucidation of their differences and similarities could provide useful information for expanding the operation region of HCCI combustion. In this research, the same two-cycle engine was operated under both the ATAC and HCCI combustion processes to compare their respective combustion characteristics. The results indicated that the ignition timing was less likely to change in the ATAC process in relation to changes in the fuel octane number than it was in the HCCI combustion process.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 춘계학술대회 논문집
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• pp.378-391
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• 2002

A 250mm stroke aerostatic stage, which detects position with laser scale and is driven by linear motor, is made and analyzed positioning error in 20$\pm$ 0.5 $^{\circ}C$ controlled atmosphere, aiming at investigating positioning characteristic of ultra-precision stage. We prove this aerostatic stage has a 10nm micro step resolution by experiment. By means of analyzing laser interferometer system, the scale of measuring error is about 0.2-0.4$\mu\textrm{m}$ according to refractive index error from missing the temperature change. To improve laser interferometer system, compensate refractive index error using measuring data from thermocouple. And, confirm 0.10$\mu\textrm{m}$ repeatability and 0.13 $\mu\textrm{m}$ positioning accuracy using the compensating refractive index. Also, we confirm 0.07 ${\mu}{\textrm}{m}$ repeatability of the stage using capacitive displacement sensor.

• 한국세라믹학회지
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• 제30권3호
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• pp.181-188
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• 1993

The sintering and renitridation behaviors of ultrafine Si3N4 powder compacts, which were heavily oxidized and/or free-Si rich, were investigated with particular attentiion to microstructures. The specimens were heated without restoring to additives and pressure by controlling heating process attained a Xe image apparatus. The effect of particle size, free-Si contents, decomposition and renitridation, were investigated. When fired to 1$650^{\circ}C$ within 15 sec and then immediately held at 135$0^{\circ}C$ for 10min N2 atmosphere, significant densification took place in the limited region, in addition to decreasing oxygen contents to less than 0.3wt%. On the other hand, specimens decomposed due to overheating at the initial stage were rapidly renitridated at the relatively lower temperature of the holding stage. And, then, the activation energy for the renitridation was calculated to be 49kcal/mole.

• 대한전자공학회논문지
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• 제27권5호
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• pp.737-746
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• 1990

Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

• 한국세라믹학회지
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• 제33권8호
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• pp.863-870
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• 1996

Fabricated modified PZT system for pyroelectric IR sensor were analyzed and characterized for dielectric piezoelectric and pyroelectric properties. Particle size and distribution of source powders were controlled by attrition milling process. 0.05PSS+yPT+(0.95-y)PZ+0.4 wt%MnO2 system was fabricated and investigated sintering density crystal structure and micro-structure through sintering conditions sintering temperature and sintering atmosphere. The poled sintered system of y=0.11 showed the lowest dielectric constant. The dielectric constants were increased with increasing y-mole ratio. The pyroelectric properties of modified PZT systems which were assembled to TO-5 package were measured by IR measurement system average out-voltage of 0.05PSS+0.1PT+0.84PZ+ wt%MnO2 was 3V.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.13-20
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• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1346-1348
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• 1998

Tungsten oxide($WO_3$) thin films were prepared by reactive magnetron sputtering in an $Ar/O_2$ atmosphere from a compressed powder $WO_3$ target and their electrochromic(EC) phenomena were investigated. PEO-$LiClO_4$-PC polymer electrolyte can easely be formed into thin films and showed high transmittance. Such electrolyte have electrochromic properties suitable for large-scale electrochromic devices. For the devices using $WO_3$ thin films of 1500, 2500, $4000{\AA}$ thickness with glass/ITO/$WO_3$/PEO-$LiClO_4$-PC/ITO/glass structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has shown that transmittance and reflectance of light could be electrically controlled by low applied voltage.

• 한국세라믹학회지
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• 제44권4호
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• pp.202-207
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• 2007

High-Quality 1-Dimensional InN single crystalline have been grown by Halide Vapor-Phase Epitaxy on the Au catalyst coated Si substrate using the vapor-liquid-solid growth mechanism. We have been grown 1-dimension InN nanowires having controlled the growth conditions for substrate temperature and gases flow rate. The grown InN nanowire of characteristics for morphologies, crystal structure, and element analysis were carried out by SEM, HR-TEM, and EDS respectively. And the defects of InN crystalline were analyzed by indexing of selective area diffraction pattern with attached HR-TEM. We have successfully obtained the defect-free 1-dimensional InN single crystalline nanowire at the atmosphere pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.88-91
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• 1988

In this paper, PLZT Ceramics were fabricated by two stage sintering method whose first stage vacuum hot pressing and second stage PbO atmosphere sintering. Using Graphite Mould instead of Alumina Mould in first stage prevented the adhision between PLZT substrate and the mould. The grain sizes of PLZT Ceramics were controlled by varying the hot pressing time and second sintering time.

• 한국표면공학회지
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• 제9권2호
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• pp.1-7
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• 1976

The dissolving and growth kinetics of intermetallic compounds for the reaction between solid iron and molten zinc were studied under nitorgen atmosphere over the temperature range between470$^{\circ}C$ and 680$^{\circ}C$. The rates of dissolution of solid iron into molten zinc were obtained under a static conditon, The amount of dissolution of sold iron and the growth of intermetalic compounds could be determined by means of microscopy. The thickness of intermetallic compound at a given temperature increases with increasing time, whereas for a given time decreases with increasing temperature . The rate of dissolution is controlled by the diffusion process of iron in the effective boundary layer of molten zinc over the temperature range 470$^{\circ}$-530$^{\circ}C$, 570$^{\circ}$-620$^{\circ}C$, and 650$^{\circ}$-665$^{\circ}C$, while by the surface reaction over the range 530$^{\circ}$-570$^{\circ}C$ and 620$^{\circ}$-650$^{\circ}C$.