• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.281-285
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• 2002

A new method of dynamic contact force measurement between a pantograph and a contact wire is proposed in this paper The method does not require design modification of an original pantograph in order to install sensors such as load cells. Contact forces can be expressed as the sum of vertical shear forces at the support points and inertial forces. Using specially-designed strain gage rosettes. vertical shear forces at the supported points can be measured without noise mixing and thermal effects. In order to obtain contact forces from shear forces, 3 inertial force compansation methods are proposed and compared in this paper. By validation process, the new proposed measurement method is verified to be applicable to the on-line current collection test.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.298-302
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• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• Proceedings of the KIEE Conference
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• 2009.04a
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• pp.10-12
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• 2009

Electromagnetic Interference(EMI) in electric railway operation has become increasingly important. The components within very high power electronic, and the circuits for treating low-level signals, comprise complex system that must coexist and be highly reliable. To study it, It were included how much the HEMU-400X generates EMI and it has an effect on the power conversion units which resulted from Power Line Disturbance (PLD) phenomenon by contact loss during its running. In this study, the dynamic characteristic of a contact wire and pantograph suppling electrical power to high-speed trains are investigated. The analysis of the loss of contact based on Power Simulator program software is performed to develop power line disturbance model suitable for high speed operation. It is confirmed that a contact wire and pantograph model are necessary for studying the dynamic behavior of the pantograph system.

• 제어로봇시스템학회:학술대회논문집
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• 1998.10a
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• pp.391-394
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• 1998

The man-machine interface Is an important factor in the computer system, and it is thought that line-of-sight (LOS) detection technology will allow significant advances in this field. Techniques for detecting LOS for use in human interfaces have been studied［1]［2］. In earlier studies, however, LOS was detected with a head piece, goggles, or through fixing the position of the head. The limitations imposed by these fixed conditions render them unsuitable far use in interfaces, as they have adverse mental or physical effects on humans. Therefore. they have not been sufficiently developed for practical application. Research on non-contact LOS detection is expected to result in a usable LOS man-machine interface［3］［4］, and the current study is intended to be a step in that direction. The authors used color contact lenses for LOS detection, and applied this new method to a computer interface. The use of color contact lenses simplifies image processing. The algorithm used in this study is sufficiently accurate for practical applications. This technique can be used in input devices, in virtual reality applications, and in human engineering research.

• Journal of Surface Science and Engineering
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• v.53 no.1
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• pp.29-35
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• 2020

In this study, five different specimen preparation methods were introduced and their advantages and disadvantages were presented. One of them, an epoxy mounting method has advantages of constant exposure area, ease of surface preparation without touching the specimen surface during polishing or cleaning, use of small amount of material and ease of specimen reuse by polishing or etching. However, in order to eliminate unexpected errors resulting from preferable reaction at the specimen/epoxy interface and contact resistance between the specimen and copper conducting line for electrical connection, it is recommended to cover the wall side of the specimen with porous anodic oxide films and to remain the contact resistance lower than 1 ohm. The increased contact resistance between the specimen and Cu conducting line appeared to result in increases of anodizing voltage and solution temperature during anodizing by which thickness and hardness of anodizing film on Al2024 alloy were drastically decreased and color of the films became more brightened.

• Animal Bioscience
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• v.37 no.6
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• pp.1121-1129
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• 2024

Objective: Objective of the study was to reduce heat stress in Murrah buffaloes and maintain their milk production and other vital functions during heat stress. Methods: A total of 21 dyads of calf-mother Murrah buffalo were selected for the study and equally divided in 3 treatment groups. First treatment group was restricted calf contact (RCC), second treatment group was fence line calf contact (FCC) and third treatment groups fence line calf contact and heat stress protection (FCC-HSP [time-controlled fan-fogger system] in the shed). Present study was conducted from April to mid-September 2021. Results: Maximum temperature and temperature humidity index in FCC-HSP shed were significantly (p<0.05) lower than that in FCC and RCC shed. Higher (p<0.05) mean daily milk yield in both the treatment groups FCC (10.36±0.30) and FCC-HSP (10.97±0.31) than RCC (8.29±0.41) was recorded. Though no significant difference between FCC and FCC-HSP in daily milk yield but FCC-HSP yielded 600 gm more milk than FCC. Pulse rate (PR) and respiration rate (RR) were lowest in FCC-HSP followed by FCC and RCC, respectively. Cortisol and prolactin levels were lower (p<0.05) in FCC-HSP followed by FCC and RCC, respectively. Conclusion: Hence, FCC along with heat stress ameliorative measures helped the buffaloes to be free of stress and maintain milk yield during heat stress period of the year in tropical conditions.

• 전기의세계
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• v.18 no.6
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• pp.23-32
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• 1969

The thesis has derived the formulas and computational algorithms useful for predicting and constraining the potential rises on the neutral line in 3-phase, 4-wire distribution line systems in the case of contact faults and single-line grounding faults. In addition it has suggested economically optimal designing conditions herewith of the distribution line systems in conduction with the potential restraining cost functions.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.2
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• pp.192-197
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• 2012

In this paper, a non-contact microwave technique was presented to detect the surface crack of the metals. An open-ended coaxial cable line was used as a sensor at 11 GHz, and the reflection coefficients were measured by scanning along the metal surface including artificial surface cracks. A parameter, the K value which was defined as the difference between maximum and minimum reflection coefficients, was measured and used to estimate the crack depth. A linear relationship between the K value and crack depth was found. This study showed that non-contact detection of the surface cracks of metals is possible using the open-ended coaxial line sensor at X-band.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.371-377
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• 2003

We perform the physical analysis such that Si/W composition ratios and phosphorus distribution change in the W/S $i_{x}$ thin films according to phosphorus concentration of polysilicon and W $F_{6}$ flow rate for the formation of WS $i_{x}$ polycide used as a gate electrode. We report that these physical characteristics have effects on the contact resistance between word line and bit line in DRAM devices. RBS measurements show that for the samples having phosphorus concentrations of 4.75 and 6.0${\times}$10$^{2-}$ atoms/㎤ in polysilicon, by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, Si/W composition ratio has increases to 2.05∼2.24 and 2.01∼2.19, respectively. SIMS analysis give that phosphorus concentration of polysilicon for both samples have decreases after annealing, but phosphorus concentration of WS $i_{x}$ thin film has increases by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm. The contact resistance between word line and bit line in the sample with phosphorus concentration of 6.0 ${\times}$ 10$^{20}$ atoms/㎤ in polysilicon is lower than the sample with 4.75 ${\times}$ 10$^{20}$ atoms/㎤ After applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, the contact resistance has been improved dramatically from 10.1 to 2.3 $\mu$ $\Omega$-$\textrm{cm}^2$.