• 대한화학회지
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• 제58권6호
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• pp.513-516
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• 2014

We measure the conductance of a 4,4'-diaminobiphenyl formed with Ni electrodes using a scanning tunneling microscope-based break-junction technique. For comparison, we use Au or Ag electrodes to form a metal-molecular junction. For molecules that conduct through the highest occupied molecular orbital, junctions formed with Ni show similar conductance as Au and are more conductive than those formed with Ag, consistent with the higher work function for Ni or Au. Furthermore, we observe that the measured molecular junction length that is formed with the Ni or Au electrodes was shorter than that formed with the Ag electrodes. These observations are attributed to a larger gap distance of the Ni or Au electrodes compared to that of the Ag electrodes after the metal contact ruptures. Since our work allows us to measure the conductance of a molecule formed with various electrodes, it should be relevant to molecular electronics with versatile materials.

• 비파괴검사학회지
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• 제32권3호
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• pp.263-268
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• 2012

It is important to know the mechanism of cell membrane fluctuation because it can be readout for the nanomechanical interaction between cytoskeleton and plasma membrane. Traditional techniques, however, have drawbacks such as probe contact with the cell surface, complicate analysis, and limit spatial and temporal resolution. In this study, we developed a new system for non-contact measurement of nano-scale localized-cell surface dynamics using modified-scanning ion-conductance microscopy. With 2 nm resolution, we determined that endothelial cells have local membrane fluctuations of ~20 nm, actin depolymerization causes increase in fluctuation amplitude, and ATP depletion abolishes all membrane fluctuations.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.1-7
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• 2015

This paper addresses technical problems of thermal contact conductance or resistance which inevitably occurs in most cryogenic engineering systems. The main focus of this paper is to examine what kind of physical factors primarily influences the thermal contact resistance and to suggest how it can be minimized. It is a good practical rule that the contact surface must have sub-micron roughness level with no oxide layer and be thinly covered by indium, gold, or Apiezon-N grease for securing sufficient direct contact area. The higher contact pressure, the lower the thermal contact resistance. The general description of this technique has been widely perceived and reasonable engineering results have been achieved in most applications. However, the detailed view of employing these techniques and their relative efficacies to reduce thermal contact resistances need to be thoroughly reviewed. We should consider specific thermal contact conditions, examine the engineering requirements, and execute each method with precautions to fulfil their maximum potentials.

• International Journal of Korean Welding Society
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• 제2권1호
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• pp.1-10
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• 2002

The thermal contact conductance at different temperatures and with different electrode forces and zinc coating morphology was measured by monitoring the infrared emissions from the one dimensionally simulated contact heat transfer experiments. The contact heat transfer coefficients were presented as a function of the harmonic mean temperature of the two contacting surfaces. Using these contact heat transfer coefficients and experimentally measured temperature profiles, the electrical contact resistivities both for the faying interface and electrode-workpiece interface were deduced from the numerical analyses of the one dimension simulation welding. It was found that the average value of the contact heat transfer coefficients for the material with zinc coating (coating weight from 0 g/$mm^2$to 100 g/$mm^2$) ranges from 0.05 W/$mm^2$$^{\circ}C$ to 2.0 W/$mm^2$$^{\circ}C$ in the temperature range above 5$0^{\circ}C$ harmonic mean temperature of the two contacting surfaces. The electrical contact resistivity deduced from the one dimension simulation welding and numerical analyses showed that the ratio of electrical contact resistivity at the laying interface to the electrical contact resistivity at the electrode interface is smaller than one far both bare steel and zinc coated steel.

• 전자공학회논문지D
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• 제34D권12호
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.895-900
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• 1997

A Quench in cable-in-conduit (CIC) conductors is often initiated by a disturbance such as strand motion that generates a highly localized normal zone in a strand or a few strands of the CIC conductors. The localized normal zone causes current and heat transfer between a disturbed strand and neighboring strands. Electrical and thermal contact characteristics between strands thus have an effect on the transient stability of the CIC conductors. In this paper the effect of contact characteristics between strands on the CIC conductor stability is presented based on the measured heat transfer characteristics of supercritical helium (SHe) for the local heating. The quench and recovery processes of the strands for the abrupt and highly localized disturbance are analyzed at the boundary between quench and recovery.

• 한국진공학회지
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• 제21권3호
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• pp.151-157
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• 2012

GaAs/$Al_xGa_{1-x}As$ 이차원 전자계는 양자점, QPC (quantum point contact), 전자 간섭계 등 다양한 형태의 양자구조 제작에 널리 사용된다. 하지만 일반적으로 GaAs 기반 양자소자는 극저온에서 소자의 전도도가 시간에 따라 변하거나 두 가지의 전 상태 사이를 왔다 갔다 하는 random telegraph noise 때문에 소자의 동작 특성이 상당히 불안하다. 이러한 문제점을 해결하기 위하여 산소 플라즈마를 이용한 소자의 표면처리가 소자의 안정성에 미치는 영향을 연구하였다. 이를 통해 소자의 표면을 산소 플라즈마를 이용하여 50 W~120 W 사이의 출력으로 30 초간 처리한 후 HCl : $H_2O$ (1 : 3) 용액을 이용하여 10초간 습식식각한 경우 전도도의 안정성이 매우 향상됨을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• Smart Structures and Systems
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• 제8권1호
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• pp.53-67
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• 2011

Human state in human-machine systems highly affects the overall system performance, and should be detected and monitored. Physiological cues are essential indicators of human state and useful for the purpose of monitoring. The study presented in this paper was focused on developing a bio-inspired sensing system, i.e., Nano-Skin, to non-intrusively measure physiological cues on human-machine contact surfaces to detect human state. The paper is presented in three parts. The first part is to analyze the relationship between human state and physiological cues, and to introduce the conceptual design of Nano-Skin. Generally, heart rate, skin conductance, skin temperature, operating force, blood alcohol concentration, sweat rate, and electromyography are closely related with human state. They can be measured through human-machine contact surfaces using Nano-Skin. The second part is to discuss the technologies for skin temperature measurement. The third part is to introduce the design and manufacture of the Nano-Skin for skin temperature measurement. Experiments were performed to verify the performance of the Nano-Skin in temperature measurement. Overall, the study concludes that Nano-Skin is a promising product for measuring physiological cues on human-machine contact surfaces to detect human state.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.382.1-382.1
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• 2014

Graphene field-effect transistors (GFET) is one of candidates for future high speed electronic devices since graphene has unique electronic properties such as high Fermi velocity (vf=10^6 m/s) and carrier mobility ($15,000cm^2/V{\cdot}s$) [1]. Although the contact property between graphene and metals is a crucial element to design high performance electronic devices, it has not been clearly identified. Therefore, we need to understand characteristics of graphene/metal contact in the GFET. Recently, it is theoretically known that graphene on metal can be doped by presence of interface dipole layer induced by charge transfer [2]. It notes that doping type of graphene under metal is determined by difference of work function between graphene and metal. In this study, we present the GFET fabricated by contact metals having high work function (Pt, Ni) for p-doping and low work function (Ta, Cr) for n-doping. The results show that asymmetric conductance depends on work function of metal because the interfacial dipole is locally formed between metal electrodes and graphene. It induces p-n-p or n-p-n junction in the channel of the GFET when gate bias is applied. In addition, we confirm that charge transfer regions are differently affected by gate electric field along gate length.