• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.338.2-338.2
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• 2014

투명반도체산화물은 우수한 광학적, 전기적 특성을 가지고 있기 때문에 차세대 박막트랜지스터의 채널층으로 각광을 받고 있다. 특히, 그 중에서도 a-IGZO를 이용한 TFT는 높은 가시광선 투과율(>80%)과 큰 전하이동도(>10 cm2/Vs) 를 갖는 등 좋은 광학적, 전기적 특성을 갖기 때문에 많은 연구가 이루어졌다. 여러 연구들에 의하면, a-IGZO TFT는 소스/드레인의 전극으로 어떤 물질을 사용하는지에 따라서 동작특성에 큰 영향을 미치는 것으로 알려져 있다. 일반적으로, a-IGZO 박막은 n형 반도체로써 일함수가 작은 금속과는 ohmic contact를 형성하고, 일함수가 큰 금속과는 Schottky barrier를 형성한다고 알려져 있다. 이와 관련된 대부분의 이전의 연구들에서는 각각의 전극물질에 따라 전기적인 특성변화에 초점을 맞춰서 연구하였다. 본 연구에서는 일함수가 작은 Ag와 일함수가 큰 Au를 a-IGZO의 박막 위에 얇게 증착하면서 이에 따른 고분해능 광전자분광(high-resolution x-ray photoelectron spectroscopy) 정보의 변화를 분석함으로써, 금속의 증착에 따른 금속층과 a-IGZO 표면 및 계면에서의 화학적 상태의 변화를 연구하였다. Au 4f, Ag 3d는 metallic property를 나타내기 이전까지는 lower binding energy(BE) 쪽으로 shift하였으며, In 3d 또한 lower BE 성분이 크게 증가하였다. O 1s, Ga 3d, Zn 3d들은 상대적으로 적은 변화를 나타내었는데, 이는 Ag, Au가 In과 상대적으로 더 많이 상호작용한다는 것을 의미한다. 본 발표에서는 이들 core level의 정보들과, 가전자대의 분광정보, 그리고 band bending의 정보가 제시될 것이며, 이 정보들은 metal 증착에 따른 contact 특성을 이해하는데 기여할 것으로 기대한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

• The KSFM Journal of Fluid Machinery
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• v.17 no.2
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• pp.30-34
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• 2014

Membrane distillation (MD) is a thermal driven separation process in which separation a hydrophobic membrane is a barrier for the liquid phase, letting the vapor phase pass through the membrane pores. Therefore, a porous and hydrophobic membrane should be used in membrane distillation. MD cannot work if water penetrates into the pores of the membrane (membrane wetting). Accordingly, it is necessary to prevent wetting of MD membranes and to remove water inside the pores of the wetted membranes if possible. In this context, our study aimed to develop methods to recover wetted membranes in MD processes. Poly-vinylidene fluoride (PVDF) membranes were used in this study. A laboratory-scale direct contact MD (DCMD) system was used to examine the effect of operating parameters on wetting. For dewetting the wetted membranes, specific techniques including the use of high temperature air were applied. The performances of the membranes before and after dewetting were compared in terms of flux, salt rejection and liquid entry pressure(LEP). The surface morphology of dewetted membrane was confirmed by scanning electron microscope (SEM).

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.4
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• pp.106-112
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• 2014

This study presents the mechanical behavior of a ventilating window (a tsunami damper) on the building wall of a nuclear power plant. The window, which is under development, is used to ventilate a machinery room and the building under normal conditions, but it also provides a safety barrier for critical equipment against a tsunami caused by an earthquake. A finite element analysis was conducted to investigate the deflection and the stress distribution of the window under given loading conditions. With symmetry, a one-quarter portion of one window was modeled, and the pressure due to a great tide is assumed to be 7 bar. A structural analysis of the assembled frame, composed of a blade and casing, was also conducted using contact conditions to find the stress and strain configurations caused by the applied pressure.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.218-221
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• 2006

The photovoltaic properties of CIES cells on alumina substrate were improved by using the Na-doped Mo as theabotom layer of hilo back contact. Na was supplied to the CIGS bulk region from alumina/Na-doped Mo/Mo/alumina? structure, as same assimilar to the Na diffusion from soda-lime glass. The content diffusion of Na from Na-doped bfo was smaller more controlled than that from SLG. These Our results indicate that Na-doped bfo act as Na source material and contents of Na amount can be controlled without the use of an alkali barrier layer. The best CIGS solar cell with conversion efficiency of 13.34%, $J_{sc}=34.62mA/cm^2,\;V_{oc}=0.58V$ and FF=66% for an active area of $0.45cm^2$ on the alumina substrate was obtained in the condition of for 100nm Na-doped Mo/1000nm Mo.

• Journal of The Geomorphological Association of Korea
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• v.19 no.4
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• pp.27-37
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• 2012

This study investigated granite landforms formed by Hantan-gang fluvial erosion and deposition, or by weathering in the area neighboring the Seungil-gyo bridge in Cheorwon-gun Gangwon-do Korea, in which the contact zone of Myeongseongsan granite and Cheorwon lava plateau creates a unique landform. Major granite landforms are deeply weathered hill, sheet erosional landform, paleo-landform surface and paleosoil, micro-fluvial landforms such as pothole and groove, granite rampart, sand bar and boulder bar, former riverbed. And river cliffs on a weakly weathered dome act as a barrier to lateral shifting of the river.

• Journal of Fashion Business
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• v.26 no.6
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• pp.94-104
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• 2022

The purpose of this study is to analyze the art world's perspective on popular art and the contact point with pure art and to present the requirements of fashion as a popular art. To analyze the artistic value of fashion, this study analyzed and presented the requirements of art by linking the innate characteristics of fashion premised on mass consumption of popular art. The research method consisted of content analysis focusing on books and papers on art and fashion. A critical perspective on expansion of the artistic field amid the blurred boundaries of art is the basis of a critical comparison between popular art and avant-garde art and a critique of popular art as opposed to value-oriented art. Conversely, as a point of contact with popular art with fine art, art is discussed against the ideological strategy of fine art and the shift in hegemony brought about by erosion of the barrier between art and everyday life. In addition, the non-essentialist perspective contradicts the division theory of popular art. The requirements of fashion as a popular art were analyzed based on the value of self-expression through the aesthetic pursuit of creativity and aesthetic expression, discourse as art, and expansion of modern art from the inessentialist perspective of popular art.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.261-278
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• 2003

Concepts.Wafer-Level Chip-Scale Concept with Handling Substrate.Low Accuracy Placement Layout with Isolation Trench.Possible Pitch of Interconnections down to $10{\mu}{\textrm}{m}$ (Sn-Grains).Wafer-to-Wafer Equipment Adjustment Accuracy meets this Request of Alignment Accuracy (+/-1.5 ${\mu}{\textrm}{m}$).Adjustment Accuracy of High-Speed Chip-to-Wafer Placement Equipment starts to meet this request.Face-to-Face Modular / SLID with Flipped Device Orientation.interchip Via / SLID with Non-Flipped Orientation SLID Technology Features.Demonstration with Copper / Tin-Alloy (SLID) and W-InterChip Vias (ICV).Combination of reliable processes for advanced concept - Filling of vias with W as standard wafer process sequence.No plug filling on stack level necessary.Simultanious formation of electrical and mechanical connection.No need for underfiller: large area contacts replace underfiller.Cu / Sn SLID layers $\leq$ $10{\mu}{\textrm}{m}$ in total are possible Electrical Results.Measurements of Three Layer Stacks on Daisy Chains with 240 Elements.2.5 Ohms per Chain Element.Contribution of Soldering Metal only in the Range of Milliohms.Soldering Contact Resistance ($0.43\Omega$) dominated by Contact Resistance of Barrier and Seed Layer.Tungsten Pin Contribution in the Range of 1 Ohm

• The Journal of Korean Academy of Prosthodontics
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• v.39 no.4
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• pp.366-375
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• 2001

The objective of this study was to investigate the surface contact and screw joint stability between screw and implant interface by use of sealer. The implants evaluated in this study were Steri-Oss futures(Hexlock $3.8D{\times}10mm$: Steri-Oss, Yorba Linda, CA), and Steri-Oss staight abutment. Titanium alloy screws were used to secure abutments to implants. The other titanium alloy screws applicating sealer(Impla-Seal, Implant Support Systems, Inc. Irvine, CA) were used to secure abutments to implants. In one another sample, 6kg of force was applied during simulated intraoral movements after abutment screws were secured to the implants with sealer. All samples were cross sectioned with sandpaper and polished with $0.1{\mu}m\;Al_2O_3$. Then samples were recorded with an scanning electron microscope. The results were as follows : 1. In the case of titanium alloy screw, irregular contacts and relatively large gap were present at thread mating surface. Also abutment screw/implant interface demonstrate incomplete seating and only one surface contact of threads between implant and screw. 2. In the case of titanium alloy screw applecating sealer, sealer was present between implant and screw. Therefore implant and screw had relatively close and tight contact without the presence of large gap. 3. On the other hand, in the case of titanium alloy screw applicating sealer and dynamic loading of suprastructures, sealer was partially present between implant and screw. Conclusively, sealer fills voids, creating a barrier to moisture and bacteria. In addition, loading of suprastructures may change the situation and limit the indications for gap sealing.