• 제목/요약/키워드: compound die

검색결과 43건 처리시간 0.023초

Sc 첨가에 따른 Al-6Si-2Cu 합금의 미세조직 개량화 (Effect of Sc Addition on the Microstructure Modification of Al-6Si-2Cu Alloy)

  • 안성빈;김정석
    • 열처리공학회지
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    • 제35권3호
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    • pp.150-158
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    • 2022
  • The effects of scandium addition on the Al-6Si-2Cu Alloy were investigated. The Al-6Si-2Cu-Sc alloy was prepared by gravity die casting process. In this study, scandium was added at 0.2 wt%, 0.4 wt%, 0.8 wt%, and 1.0 wt%. The microstructure of Al-6Si-2Cu-Sc alloy was investigated using Optical Microscope, Field Emission Scanning Electron Microscope, Electron Back Scatter Diffraction, and Transmission Electron microscope. The microstructure of Al-6Si-2Cu alloy with scandium added changed from dendrite structure to equiaxed crystal structure in specimens of 0.4 wt% Sc or more, and coarse needle-shape eutectic Si and β-Al5FeSi phases were segmented and refined. The nanosized Al3Sc intermetallic compound was observed to be uniformly distributed in the modified Al matrix.

고압 금형 주조용 Al-4 wt%Mg-0.9 wt%Si계 합금의 인장특성에 미치는 Fe, Mn함량의 영향 (Effect of Fe, Mn Content on the Tensile Property of Al-4 wt%Mg-0.9 wt%Si Alloy System for High Pressure Die Casting)

  • 김헌주
    • 한국주조공학회지
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    • 제33권3호
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    • pp.103-112
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    • 2013
  • Effect of Fe and Mn contents on the tensile properties of Al-4 wt%Mg-0.9 wt%Si alloy system has been studied. Common phases of Al-4 wt%Mg-0.9 wt%Si alloy system were ${\alpha}$-Al, $Mg_2Si$, ${\alpha}-Al_{12}(Fe,Mn)_3Si$ and ${\beta}-Al_5FeSi$. As Fe content of Al-4 wt%Mg-0.9 wt%Si alloy system increased from 0.15 wt% to above 0.3 wt%, ${\beta}-Al_5FeSi$ compound appeared. When Mn content of the alloy increased from 0.3 wt% to 0.5 wt%, morphology of plate shaped ${\beta}-Al_5FeSi$ compound changed to chinese script ${\alpha}-Al_{12}(Fe,Mn)_3Si$. As Fe content of Al-4 wt%Mg-0.9 wt%Si-0.3 wt%Mn alloy increased from 0.15 wt% to 0.4 wt%, tensile strength of the as-cast alloy decreased from 191 MPa to 183 MPa and, elongation of the alloy also decreased from 8.0% to 6.2%. Decrease of these properties can be explained as the formation of plate shape, ${\beta}-Al_5FeSi$ phase with low Mn/Fe ratio of the alloy. However, when Mn content of Al-4 wt%Mg-0.9 wt%Si-0.3 wt%Fe alloy increased from 0.3 wt% to 0.5 wt%, tensile strength of as-cast alloy increased from 181 MPa to 194 MPa and, elongation of the alloy increased from 6.8% to 7.0%. These improvements attribute to the morphology change from ${\beta}-Al_5FeSi$ phase to chinese script, ${\alpha}-Al_{15}(Fe,Mn)_3Si_2$ phase shape-modified from with high Mn/Fe ratio of the alloy.

알루미늄 청동의 미세조직과 기계적 성질에 미치는 Fe 및 Si 첨가의 영향 (Effects of Iron and Silicon Additions on the Microstructures and Mechanical Properties of Aluminium Bronze)

  • 김지환;김지태;김진한;박흥일;김성규
    • 한국주조공학회지
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    • 제36권6호
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    • pp.202-207
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    • 2016
  • The effects of Fe and Si additions on the microstructures and mechanical properties of aluminum bronze have been investigated. In a bar-type specimen cast in a die mold, the addition of Fe promoted the dendritic solidification of the ${\alpha}$ phase. The hardness values increased slightly in the Fe-added specimen with heat treatment, while these values was increased significantly in the specimens with Si or with combined additions of Fe and Si. When a centrifugal casting bush with combined addition of Fe and Si was heat treated, the FeSi compound within the matrix was finely dispersed, and was observed to be the origin of cup-cone type conical dimple failure in the tensile fracture surface. The mechanical properties of the heat treated centrifugal casting bushes, whose nominal alloy compositions were (Cu-7.0Al-0.8Fe-3.0Si)wt%, exhibited tensile strength of $703-781N/mm^2$, elongation of 6.6-11.7% and hardness of Hv 222.6-249.2. These high values of strength and elongation were attributed to the strengthening of the matrix due to the combined addition of Fe and Si, and to precipitation of fine the FeSi compound.

Collective laser-assisted bonding process for 3D TSV integration with NCP

  • Braganca, Wagno Alves Junior;Eom, Yong-Sung;Jang, Keon-Soo;Moon, Seok Hwan;Bae, Hyun-Cheol;Choi, Kwang-Seong
    • ETRI Journal
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    • 제41권3호
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    • pp.396-407
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    • 2019
  • Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합 (Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density)

  • 이채린;이진현;박기문;유봉영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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OSP 표면처리된 FR-4 PCB기판과 Sn58%Bi 복합솔더 접합부의 미세조직 및 접합강도에 미치는 Sn-MWCNT의 영향 (Effect of Sn Decorated MWCNT Particle on Microstructures and Bonding Strengths of the OSP Surface Finished FR-4 Components Assembled with Sn58%Bi Composite Solder Joints)

  • 박현준;이충재;민경득;정승부
    • 마이크로전자및패키징학회지
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    • 제26권4호
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    • pp.163-169
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    • 2019
  • 전자제품에서 사용되던 Sn-Pb계 솔더합금은 RoHS, WEEE, REACH 등의 환경규제에 의해 무연솔더합금(Pb free solder alloy)으로 빠르게 대체되고 있다. 그 중에서도 Sn58%Bi(in wt.%) 합금은 융점이 낮고 Sn-Pb계 합금에 비해 기계적특성이 우수하여, 전자제품 솔더합금으로 사용하기 위한 연구가 진행되고 있다. 그러나 Sn58%Bi 솔더합금은 구성 원소인 Bi의 취성으로 인해 기계적인 신뢰성이 저하되는 문제를 개선할 필요가 있다. 따라서 본 연구에서는 다양한 함량의 Sn-MWCNT (multiwalled carbon nanotube) 입자를 첨가한 Sn58%Bi 복합솔더를 제조한 후, OSP처리된 FR-4 기판 및 FR-4 컴포넌트를 리플로우(reflow) 횟수를 1회부터 7회까지 진행하였다. 접합시편의 접합강도 및 파괴에너지는 전단시험(die shear test)을 통해 측정하였고, 주사전자현미경(scanning electron microscope, SEM)으로 미세조직 및 파괴모드를 분석하였다. Sn-MWCNT 첨가에 의해 Sn58%Bi 복합솔더 접합부에서 조직 미세화가 관찰되었고, 함량이 0.1 wt.%일때 접합강도와 파괴에너지는 각각 20.4%, 15.4% 만큼 증가하였다. 또한 파단면에서 연성파괴(ductile failure) 영역이 관찰되었으며, F-x(force-displacement to failure) 그래프를 통해 Sn-MWCNT의 첨가가 복합솔더의 연성(ductility)을 증가시킨 것을 확인할 수 있었다.

EPDM/Carbon Black계에서 Carbon Black에 따른 기계적 성질 및 방진 특성 (Effect of Carbon Black on Mechanical and Damping Properties of EPDM/Carbon Black System)

  • 노태경;강동국;서재식;양경모;서관호
    • Elastomers and Composites
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    • 제47권3호
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    • pp.231-237
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    • 2012
  • 본 연구에서는 EPDM 컴파운드에 여러 종류의 충전제를 사용하여 물리적, 기계적 특성을 관찰하였다. 충전제로는 Semi-reinforcing furnace black(SRF), high abrasion furnace black(HAF) 그리고 acetylene black을 사용하였다. 가교제로는 dicumyl peroxide (DCP)를 사용하였다. 레오미터, 경도계, 만능 재료 시험기, 영구 압축 줄음율 그리고 동적 점탄성 분석을 통하여 재료의 성질을 관찰하였다. EPDM 컴파운드에 충전제로 SRF를 사용하였을 때함량의 증가에 따라 인장강도와 파단 연신율은 증가하였으나, acetylene black을 사용하였을 때 함량의 증가에 따라 인장강도와 파단 연신율은 감소하였다. Acetylene black을 사용하였을 때 넓은 온도 범위에서 저장탄성률의 변화율이 적었다. 또한 EPDM 컴파운드의 tan ${\delta}$는 acetylene black을 사용하였을 때 우수한 결과를 보였다.

GaN증폭기의 본드 와이어 용융단선 현상분석과 과도전류를 고려한 전류용량 선정에 대한 연구 (A Study on Bond Wire Fusing Analysis of GaN Amplifier and Selection of Current Capacity Considering Transient Current)

  • 유우성;석연수;황규혁;김기준
    • 전기전자학회논문지
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    • 제26권4호
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    • pp.537-544
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    • 2022
  • 본 논문은 최근 전자전, 레이더, 기지국 및 위성통신분야에서 각광받고 있는 GaN HEMT(Gallium Nitride High Electron Mobility Transistor) die를 이용한 고출력증폭기의 제작에 사용되는 본드 와이어의 용융단선 현상과 원인을 분석하였다. 고출력증폭기의 주요 성능인 최대 출력전력을 얻기 위해서는 최적의 임피던스 정합이 필요하고 정격전류뿐만 아니라 과도전류에 대한 발열을 고려하여 본드 와이어 소재에 부합하는 직경과 가닥수가 정해져야 한다. 특히, GaN과 같이 에너지 밴드 갭이 넓은 화합물반도체는 설계효율이 낮거나 방열이 부족하면 열 저항 증가로 인해 본드 와이어의 용융단선을 촉발하는 현상을 확인하였다. 본 자료는 발열조건에 대한 모의시험을 수행하고, IR현미경 측정을 통한 검증으로 GaN소자를 이용한 응용분야에 참고자료로 활용이 기대된다.

EPDM 고무의 첨가제에 따른 가류 및 물성에 미치는 영향 연구 (Effect of Processing Additives on Vulcanization and Properties of EPDM Rubber)

  • 이수;배정수
    • 한국응용과학기술학회지
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    • 제35권1호
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    • pp.173-185
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    • 2018
  • 화학 관능기가 다른 지방산 에스터계, 지방산 금속염 및 아마이드계 분산 및 흐름개선 첨가제가 EPDM과 카본블랙을 충전제로 사용한 고무 배합물의 가류 특성과 가류된 고무 배합물의 기계적 물성 및 노화특성에 미치는 영향을 무니점도계, 레오미터, 경도계, 만능재료시험기 등을 이용하여 측정하였다. $125^{\circ}C$에서 측정된 무니점도는 아마이드계 > 금속염계 > 에스터계 첨가제의 순으로 감소하는 경향을 보였으며, 스코치시간은 에스터계와 금속염계 첨가제는 첨가 유무에 따라 거의 차이가 없거나 조금 늦어지며, 아마이드계 첨가제는 1분 이상 빨라졌다. $160^{\circ}C$에서의 레오미터 측정 결과 가류시간은 금속염계와 아마이드계 첨가제의 경우는 가류반응이 빨리 진행되었다. 델타토크 값은 금속염계와 아마이드계 첨가제가 있는 경우 전반적으로 증가하였으나, 에스터계 첨가제가 있는 경우는 약간 감소하였다. EPDM 배합물의 인장강도는 에스터계 첨가제가 첨가된 경우 크게 향상되었으며, 아마이드계와 금속염계 첨가제의 경우는 큰 영향이 없었다. 신율의 경우는 금속염계 첨가제의 경우 크게 향상되었으며, 나머지의 경우는 큰 영향이 없었다. 인열강도는 첨가제의 첨가에 따라 전반적으로 상승하였으며 금속염계 첨가제의 경우에서 확연히 상승하였으며 경도는 첨가제의 종류와 상관없이 유사한 값을 나타내었다. $100^{\circ}C$에서 24시간 열노화시킨 EPDM 배합물은 금속염계와 아마이드계 첨가제의 경우는 거의 변화가 없었으며 신율의 변화는 첨가제를 함유한 모든 EPDM 배합물이 10-20% 정도 감소하는 경향을 보였다.

국내에 도입된 Sedum album L.의 생육 특성 및 저토심 옥상 녹화 시스템에 관한 연구 (Studies on Growth Characteristics and Shallow Green-Roof Systems of Sedum album L. Introduced in Korea)

  • 김인혜;허무룡;허근영
    • 한국조경학회지
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    • 제33권5호통권112호
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    • pp.69-82
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    • 2005
  • These studies were carried out (1) to investigate the growth characteristics of Sedum album L. in the field, (2) to propose a suitable shallow peen roof system for this plant, and (3) to evaluate plant growth in the proposed system over the long term. The growth characteristics, such as morphological properties, growth habit, shade tolerance, and flowering, were surveyed. In experimental shallow green-roof systems, the effects of drainage type, substrate type, and soil depth on plant growth were investigated. Then drought tolerance was investigated. After planting Sedum album L. in the proposed system survival rate, cover, and resistance to insects, heal and cold were evaluated for about 2 years. The results of these studies are summarized below. 1. In the field, the aboveground part of Sedum album L. did not die back during the winter. Plant height was 4$\sim$7 cm. Roots were distributed to a depth of 5$\sim$7 cm. Sedum album L. is a compact ground-cover plant that spreads vigorously. Shading condition of less than $30\%$ of full sunlight didn't cause any trouble, but shading conditions above $87\%$ made the shape of the shoots and leaves abnormal. The plant bloomed from June to August and had a rather large compound umbel of white, star-shaped flowers. 2. Two systems, a drainage-blend-10 cm soil depth and a reservoir$\cdot$drainage-blend-15 cm soil depth, performed best in terms of cover, fresh weight, and dry weight. The first has an advantage for green roofs because it is lighter than the latter. 3. In drainage-blend-10 m soil depth and modified reservoir · drainage-blend-10 cm soil depth system no plants died for about 4 months after stopping the irrigation. The visual quality of the latter system was above 5 for 4 months and that of the former was under 5 after 2 months. In the field, however, the drought tolerance of Sedum album L. grown in the former would be enough to withstand the dry season. Considering the urban ecosystem and the importance of healthy growth the modified reservoir $\cdot$ drainage-blend-10 cm soil depth system was finally recommended. This system was composed of a 4 cm thick drainage layer and drain outlets placed at a height of 2.5 cm. 4. In the proposed system, the survival rate was $100\%$, and there was no injury induced by insects and heat. The leaf density decreased a little in winter. Cover increased throughout the year. Sedum album L. was planted with a cover of 72$cm^{2}$ on 3 April 2003; on 16 June 2003 and 15 June 2004, cover was $132.66\pm$5.87 $cm^{2}$(1.8 times) and $886.98\pm$63.51 $cm^{2}$(12.3 times), respectively.