• 제목/요약/키워드: complex impedance

검색결과 280건 처리시간 0.026초

A Characteristics of Human Skin Impedance Including at Biological Active Points

  • Lee, J. W.;Kim, D. M.;H. G. Lim;Park, I. Y.;J. H. Cho
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.440-442
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    • 2002
  • The electrical characteristics of biologically active points (BAPs) compared with those of the surrounding human skins are studied. And we confirm that BAPs have lower resistance and higher capacitance than the surrounding skins do. We also find that BAPs have higher characteristic frequency than surrounding skins and the impedance spectra of BAPs sometimes have two semicircles on the complex impedance plane. We propose the skin impedance model that is proper to the BAPs and this circuit describes our experimental results sufficiently well.

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A Study on the Impedance Calculation by using Equivalent Model in Catenary System

  • Kim, Min-Kyu;Kim, Min-Seok;Kim, Dae-Hwan;Lee, Jong-Woo
    • International Journal of Railway
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    • 제3권2호
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    • pp.46-53
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    • 2010
  • Electric railroad systems consist of rolling stock, track, signal and catenary system. In the catenary system, one of the most important factors is the impedance according to the design and characteristic. Before the catenary system is designed, the impedance should be precedently researched. The railroad catenary system is complex system which is composed by five conductors. The five conductors classify up and down feeders, up and down contact wire group, rail group. Therefore, we should compose the catenary system of the equivalent five-conductors model. In this paper, we suggest a geometrical model and a equivalent conductor model by using geometric mean radius of five conductors in the catenary system. Also, we calculate demanded parameter values in the model. By using those, line constants of five conductors are analyzed by applying the equivalent method called as the condensed joint matrix.

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λ/4 전송 선로와 π-네트워크를 이용한 UHF-대역 적응형 임피던스 정합 회로 설계 (A Design of Adaptive Impedance Tuning Circuit for UHF-Band Using λ/4 Transmission Line and π-Network)

  • 황수설;홍성용
    • 한국전자파학회논문지
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    • 제23권3호
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    • pp.367-376
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    • 2012
  • 본 논문에서는 물리적인 환경 변화에 의해 발생될 수 있는 갑작스런 부하단 임피던스의 변화에 능동적으로 대응할 수 있는 적응형 임피던스 정합 회로를 구성하는 부정합 측정부, 임피던스 정합부, 조정 알고리즘부의 특성과 현재까지 진행된 연구 수준을 확인해 보았고, ${\lambda}/4$ 전송 선로와 ${\pi}$-네트워크를 이용하여 간단히 구성된 적응형 임피던스 정합 회로의 설계 결과를 보였다. 이를 위해 간단한 구성을 가지면서 반복적인 계산없이 임의의 부하단 임피던스를 바로 제어할 수 있는 적응형 임피던스 정합 회로를 제안하였고, 설계를 위한 계산식을 유도하였다. 또한, 유도된 계산식을 통해 최적화된 임피던스를 찾아주어 능동적으로 제어할 수 있는 조정 알고리즘도 제시하였다. 제안한 적응형 임피던스 정합 회로에서 유도된 계산식과 조정 알고리즘을 이용하여 시뮬레이션을 수행하였고, 시뮬레이션 결과 임의의 부하단 임피던스가 회로에 최적화된 임피던스로 능동적으로 제어 될 수 있음을 확인하였다.

ITO/$Alq_3$/Al의 주파수 변화에 따른 유전 특성 (Dielectric Properties depending on Frequency in ITO/$Alq_3$/Al)

  • 오용철;이동규;김진사;신철기;이성일;김충혁;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.292-293
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    • 2006
  • We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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$Al_2O_3$가 첨가된 ZnO의 전기적 특성 (Electrical characteristics of $Al_2O_3$ added ZnO)

  • 최우성;소병문;홍진웅
    • E2M - 전기 전자와 첨단 소재
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    • 제9권6호
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    • pp.572-577
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    • 1996
  • Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.

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Alq3를 이용한 유기 발광 소자의 주파수에 변화에 따른 유전 특성 (Dielectric Properties depending on Frequency in Organic Light-emitting Diodes using $Alq_3$)

  • 오용철;이동규;정동회;이호식;박건호;김태완;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.293-294
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    • 2005
  • We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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다공성 SiO2/ITO 나노박막의 전기적 특성 (Electrical Properties of Porous SiO2/ITO Nano Films)

  • 신용욱;김상우
    • 한국재료학회지
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    • 제12권1호
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    • pp.94-99
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    • 2002
  • The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.

유기 발광 다이오드(ITO/$AIq_3$/AI)의 온도 변화에 따른 유전 특성 (Dielectric Properties Depending on Temperature in Organic Light-emitting Diodes(ITO/$AIq_3$/AI))

  • 오용철;이동규;조춘남;안준호;정동희;이성일;김귀열;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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    • pp.74-75
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    • 2006
  • We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

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Dynamic Response of Organic Right-emitting Diodes in ITO/Alq3 Structure

  • Lee, Dong-Gyu;Lee, Joon-Ung
    • Transactions on Electrical and Electronic Materials
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    • 제6권3호
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    • pp.97-100
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    • 2005
  • Dynamic response of organic light-emitting diodes were analyzed in $ITO/Alq_3$(100 nm)/Al device structure with a variation of voltage an frequency. At low frequency region, complex impedance is mostly governed by resistive component, and at high frequency region by capacitive component. Also, we have evaluated resistance, capacitance and permittivity of devices.

Open-Ended Two-Strip Meander-Line Antenna for RFID Tags

  • Son, Hae-Won;Choi, Gil-Young;Pyo, Cheol-Sig
    • ETRI Journal
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    • 제28권3호
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    • pp.383-385
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    • 2006
  • A new meander-line antenna consisting of two open-ended strips is proposed for a compact and broadband UHF radio frequency identification tag. An equivalent circuit model for the proposed antenna is derived and used to perform a simple and wideband impedance match to an arbitrary complex impedance of a tag chip without any additional matching network. The performance of the proposed antenna is validated by comparing calculated and measured results, which show good agreement.

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