• Radiation Oncology Journal
• /
• v.7 no.1
• /
• pp.123-132
• /
• 1989

A radiation beam incident on an irregular or sloping surface produces the non-uniformity of absorded dose. The use of a tissue compensator can partially correct this dose inhomogeneity. The tissue compensator is designed based on the patient's three dimensional contour. After required compensator thickness was determined according to tissue deficit at $25cm\pm25cm$ field size, 10cm depth for 6MV x-rays, tissue deficit was mapped by isoheight technique using laser beam system. Compensator was constructed along the designed model using 0.8mm lead sheet or 5mm acryl plate. Dosimetric verification were peformed by film dosimetry using humanoid phantom. Dosimetric measurements were normalized to central axis full phantom readings for both compensated and non-compensated field. Without compensation, the percent differences in absorbed dose ranged as high as $12.1\%$ along transverse axis, $10.8\%$ along vertical axis. With the tissue compensators in place, the difference was reduced to $0\~43\%$ Therefore, it can be concluded that the compensator system constructed by isoheihnt technique can produce good dose distribution with acceptible inhomogeneity, and such compensator system can be effectively applied to clinical radiotherapy.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.3
• /
• pp.132-138
• /
• 2003

We investigated the polarization retention characteristics of ferroelectric capacitors with $Pb(Zr,Ti)O_3$ (PZT) thin films which were fabricated by different deposition methods. In thermally-accelerated retention tests, PZT films which were prepared by a chemical solution deposition (CSD) method showed rapid decay of retained polarization charges as the thickness of the films decreased down to 100 nm, while the films which were grown by metal organic chemical vapor deposition (MOCVD) retained relatively large non-volatile charges at the corresponding thickness. We concluded that in the CSD-grown films, the thicker interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of these layers was larger in MOCVD-grown films than in CSD-grown films. Due to incomplete compensation of surface polarization charges by the free charges in the metal electrodes, the interfacial field activated the space charges inside the interfacial layers and deposited them at the boundary between the ferroelectric layer and the interfacial layer. Such space charges built up an internal field inside the films, which interfered with domain wall motion, so that retention property at last became degraded. We observed less imprint which was a result of less internal field in MOCVD-grown films while large imprint was observed in CSD-grown films.

• Journal of the Optical Society of Korea
• /
• v.14 no.3
• /
• pp.260-265
• /
• 2010

This paper proposes a transflective configuration of the dual operating mode liquid crystal display, which has transmissive dynamic and reflective memory parts in its pixel. By employing a wideband structure and optimizing the cell-gap of the liquid crystal layer, the reflective memory part shows a very low reflectance in the dark state, good dispersion properties for the entire visible range, as well as high reflectance in the bright state. The transmissive dynamic part is designed to have the same cell-gap and rubbing direction as those of the reflective part. The driving voltage of the dynamic part and transmittance of the bright state can also be controlled by using compensation film with a positive a-plate, which can compensate the reflective part. Experimental results in the memory part operation demonstrate that the contrast ratio is over 50:1 and the reflectance in the dark state is reduced to 56% on average of that of the conventional dual mode configuration for the entire visible range. The contrast ratio of the dynamic part is 300:1.

• Journal of Sensor Science and Technology
• /
• v.33 no.1
• /
• pp.56-61
• /
• 2024

The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
• /
• v.27 no.3
• /
• pp.214-220
• /
• 2001

The clinical application of the three-dimensional radiographic technique had been limited to standard Broadbent-Bolton cephalometer with biplanar stereoradiography. We developed a new method for compensating the error of head position in ordinary non-biplanar cephalostat. It became to possible to use the three dimensional cephalogram commonly in clinical bases. 1. The method of methemetical compensation of head positioning error in non-biplanar condition was evaluated with dry skull. The error of the method of first and the second trial was $0.46{\pm}1.21$, $0.33{\pm}0.90mm$, which means the error of the head positioning correction in conventional cephalogram was within clinical acceptance. 2. The reproducibility of this system for clinical application was 0.54 mm ($-2.99{\sim}2.26mm$) which defines the absolute mean difference of the first and second trial. Compare to the The landmark identification error $1.2{\pm}1.6mm$, the error of the measurement was within the range of landmark identification error. The result indicates the adequate clinical accuracy of the computation of three-dimensional coordinates by compensation of the error of the head position in ordinary non-biplanar cephalostat.

• The Journal of Korean Society for Radiation Therapy
• /
• v.30 no.1_2
• /
• pp.191-199
• /
• 2018

Purpose : In this study, we evaluated the usefulness of colloid gel(slime) as a compensator for irregular patient surfaces in radiation therapy. Materials and Methods : For this study, colloid gel suitable for treatment was made and four experiments were conducted to evaluate the applicability of radiation therapy. Trilogy(Varian) and CT(SOMATOM, Siemens) were used as treatment equipment and CT equipment. First, the homogeneity according to the composition of colloid gel was measured using EBT3 Film(RIT). Second, the Hounsfield Unit(HU) value of colloid gel was measured and confirmed by CRIS phantom, Eclipse RTP(Eclipse 13.1, Varian) and CT. Third, to measure the deformation and degeneration of colloid gel during the treatment period, it was measured 3 times daily for 2 weeks using an ion chamber(PTW-30013, PTW). The fourth experiment was compared the treatment plan and measured dose distributions using bolus, rice, colloid gel and additional, dose profiles in an environment similar to actual treatment using our own acrylic phantom. Result : First experiment, density of the colloid gel cases 1, 2 and 3 was $1.02g/cm^3$, $0.99g/cm^3$ and $0.96g/cm^3$. When the homogeneity was measured at 6 MV and 9 MeV, case 1 was more homogeneous than the other cases, as 1.55 and 1.98. In the second experiment, the HU values of case 1, 2, 3 were 15 and when the treatment plan was compared with the measured doses, the difference was within 1 % at all 9, 12 MeV and a difference of -1.53 % and -1.56 % within the whole 2 % at 6 MV. In the third experiment, the dose change of colloid gel was measured to be about 1 % for 2 weeks. In the fourth experiment, the dose difference between the treatment plan and EBT3 film was similar for both colloid gel and bolus, rice at 6 MV. But colloid gel showed less dose difference than bolus and rice at 9 MeV. Also, dose profile of colloid gel showed a more uniform dose distribution than the bolus and rice. Conclusion : In this study, the density of colloid gel prepared for radiation therapy was $1.02g/cm^3$ similar to the density of water, and alteration or deformation was not observed during the radiotherapy process. Although we pay attention to the density when manufacturing colloid gel, it is sufficient in that it can deliver the dose uniformly through the compensation of the patient's body surface more than the bolus and rice, and can be manufactured at low cost. Further studies and studies for clinical applications are expected to be applicable to radiation therapy.

• Polymer(Korea)
• /
• v.36 no.4
• /
• pp.486-493
• /
• 2012

Photocurable sulfonated polyimide (SPI) polyelectrolyte containing chalcone group was prepared and fabricated on an alumina electrode pretreated with chalcone-containing silane-coupling agent. SPI films with bis(tetramethyl)ammonium 2,2'-benzidinedisulfonate ($Me_4N$-BDS)/4,4'-diaminochalcone (DAC)/pyromellitic dianhydride (PA)= 90/10/100 possessed very linear response(Y = -0.04528X+7.69446, $R^2=0.99675$) and showed resistance changing from 4.48 to $2.1k{\Omega}$ between 20 and 95 %RH. The response time for absorption and desorption measurements between 33 and 94 %RH% was about 79 s, which affirmed the high efficiency of crosslinked SPI film for rapid detection of humidity. A negative temperature coefficient showing $-0.49%RH/^{\circ}C$ was found and proper temperature compensation should be considered in future applications. Moreover, pretreatment of the substrates with chalcone-containing silane-coupling agent was performed to improve the water durability and the stability of the humidity sensors at a high humidity and a high temperature and long-term stability for 480 h. The crosslinked SPI films anchored to electrode substrate could be a promising material for the fabrication of efficient humidity sensors with superior characteristics compared to the commercially available sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.10
• /
• pp.805-810
• /
• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.99-99
• /
• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Journal of Bio-Environment Control
• /
• v.3 no.2
• /
• pp.106-118
• /
• 1994

This study was conducted to analyze the effects of fluctuations in temperature, light intensity and soil temperature on the growth of red pepper seedlings in the nonheated plastic houses with various number of layers and in the open field. Relationship between the optimal environment and the growth of seedlings was discussed, and the maximum and minimum outdoor temperatures in Kwangju area from 1941 to 1985 were analyzed. The results obtained were as follows; 1. The minimum temperature in tunnel with quadruple coverings of P. E. film from December 20 to February 25 was decreased to 5$^{\circ}C$ mostly, where the exposure to chilling temperature could not be avoided during this period. The maximum temperature was increased to 33$^{\circ}C$ mostly and 42$^{\circ}C$ in peak, where some ventilation was needed. 2. The diurnal differences of inside temperature, increasing with number of layers, were 16 to 38$^{\circ}C$, while those of outside temperature were 5 to 1$0^{\circ}C$. 3. The cold injury in the quadruple coverings during winter occurred all the times below 12$^{\circ}C$ and as many as 200 times over 3$0^{\circ}C$, while effectiveness of thermal insulation in the multilayered nonheating plastic houses were clearly proved. 4. The inside light intensity was markedly reduced with the increment of layers and the minimum light intensity fallen down below the light compensation point for the growth of red pepper plants regardless of the number of layers. 5. Until 10 a. m., the temperature in the daytime during December 20 to mid - February showed below 10 to 12$^{\circ}C$ which was the limiting temperature for the growth of red pepper seedlings. After 4 p. m., the light intensity was sharply reduced despite of the air temperature kept over 12$^{\circ}C$. Therefore, limiting factors for the growth of red pepper seedlings were the temperature before 10 a. m. and the light intensity after 4 p. m. 6. The minimum soil temperature in quadruple coverings showed around 1$0^{\circ}C$ where the physiological damage for red pepper seedlings might be occurred. 7. The minimum outdoor temperatures from 1941 to 1985 was -19.4$^{\circ}C$, observed in the 5th January.