• Journal of information and communication convergence engineering
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• v.19 no.4
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• pp.263-268
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• 2021

Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P- and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current-voltage characteristics and capacitance-voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and P-LTFETs in series were verified with the TCAD mixed-mode simulation results.

• Journal of Mechanical Science and Technology
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• v.18 no.2
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• pp.230-239
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• 2004

A compact model approach of a network of spring elements for elastic loading is presented for the thermal deformation analysis of BGA package assembly. High-sensitivity moire interferometry is applied to evaluate and calibrated the model quantitatively. Two ball grid array (BGA) package assemblies are employed for moire experiments. For a package assembly with a small global bending, the spring model can predict the boundary conditions of the critical solder ball excellently well. For a package assembly with a large global bending, however, the relative displacements determined by spring model agree well with that by experiment after accounting for the rigid-body rotation. The shear strain results of the FEM with the input from the calibrated compact spring model agree reasonably well with the experimental data. The results imply that the combined approach of the compact spring model and the local FE analysis is an effective way to predict strains and stresses and to determine solder damage of the critical solder ball.

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.749-755
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• 2023

A new approximation method was proposed for treating the non-resonant spatial self-shielding effects of double heterogeneous region such as the double heterogeneous effect of VHTR fuel compact in the thermal energy range and that of BP compact with BISO. The method was developed based on the effective homogenization method and a spherical unit cell model with explicit coated layers and a matrix layer. The self-shielding factor was derived from the relation between the collision probabilities for a double heterogeneous compact and the effective cross section for the homogenized compact. First, the collision probabilities and transmission probabilities for all layers of the spherical model were calculated using conventional collision probability solver. Then, the effective cross section for the homogenized sphere cell representing the homogenized compact was obtained from the transmission probability calculated using the probability density function of a chord length. The verification calculations revealed that the proposed method can predict the self-shielding factor with a maximum error of 2.3% and the double heterogeneous effect with a maximum error of 200 pcm in the typical VHTR problems with various packing fractions and BP compact sizes.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.235-236
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• 1996

Using a phenomenological model for the accretion onto the magnetic white dwarf, we calclliated some optical line profiles from the magnetosphere of such systems. Line profiles of these systems seem to be produced in the magnetosphere of the compact star due to the reemission of X-ray produced near the stellar surface. Some results of our new calculation and the analysis of these results will be presented. Our results show that the model used here can reproduce the observed optical line profiles and open the possiblity to determine the parameters of individual systems.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.160-162
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• 2016

A compact model of tunnel field effect transistor (TFET) has been developed. The model includes a surface potentia calculation module and a band-to-band-tunneling current module. Model comparison with TCAD shows that the mode calculates TFET surface potential and drain current accurately.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.436-437
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• 2011

Before 1970s, 154kV substations in Korea were built in outdoor steel structure types only. In early 1970s, Germany developed GIS and the first indoor GIS type substation was built in Korea in 1980. In 1998, 154kV indoor type substations were standardized into regular type and urban type which applied steel frames to structures. In 2002, this was re-standardized into five different types in detail. In 2009, 154kV compact substation design was developed and standardized and saved about 20% of the construction cost with new technology and methods. Compact substations were classified into three types ; urban type, multi-function type, and regular type. The first urban type compact substation, Jang-ki substation, was built in Kimpo in June, 2010. This paper would present the standard model of 154kV compact substation and the way of improving facilities for the first compact substation.

• Journal of information and communication convergence engineering
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• v.14 no.2
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• pp.115-121
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• 2016

Currently there is a lack of literature on SPICE-level models of double-gate (DG) tunnel field-effect transistors (TFETs). A DG TFET compact model is presented in this work that is used to develop a SPICE model for DG TFETs implemented with Verilog-A language. The compact modeling approach presented in this work integrates several issues in previously published compact models including ambiguity about the use of tunneling parameters A_k and B_k, and the use of a universal equation for calculating the surface potential of DG TFETs in all regimes of operation to deliver a general SPICE modeling procedure for DG TFETs. The SPICE model of DG TFET captures the drain current-gate voltage (I_ds-V_gs) characteristics of DG TFET reasonably well and offers a definite computational advantage over TCAD. The general SPICE modeling procedure presented here could be used to develop SPICE models for any combination of structural parameters of DG TFETs.

• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.2014-2020
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• 2017

A compact current model applicable to both single-gate (SG) and double-gate (DG) tunneling field-effect transistors (TFETs) is presented. The model is based on Kane's band-to-band tunneling (BTBT) model. In this model, the well-known and previously-reported quasi-2-D solution of Poisson's equation is used for the surface potential and length of the tunneling path in the tunneling region. An analytical tunneling current expression is derived from expressions of derivatives of local electric field and surface potential with respect to tunneling direction. The previously reported correction factor with three fitting parameters, compensating for superlinear onset and saturation current with drain voltage, is used. Simulation results of the proposed TFET model are compared with those from a technology computer-aided-design (TCAD) simulator, and good agreement in all operational bias is demonstrated. The proposed SG/DG-TFET model is developed with Verilog-A for circuit simulation. A TFET inverter is simulated with the Verilog-A SG/DG-TFET model in the circuit simulator; the model exhibits typical inverter characteristics, thereby confirming its effectiveness.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.73-76
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• 2020

The physics-based compact gate leakage current noise models in nanoscale MOSFETs are developed in such a way that the models incorporate important physical effects and are suitable for circuit simulators, including QM (quantum-mechanical) effects. An emphasis on the trap-related parameters of noise models is laid to make the models adaptable to the variations in different process technologies and to make its parameters easily extractable from measured data. With the help of an accurate and generally applicable compact noise models, the compact noise models are successfully implemented into BSIM (Berkeley Short-channel IGFET Model) format. It is shown that the noise models have good agreement with measurements over the frequency, gate-source and drain-source bias ranges.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.352-359
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• 2008

This paper presents a controller implementation using model based controller design programs-System Identification Toolkit, Control Design Toolkit, Simulation module. This method is easier and simpler than conventional controller design method. To implement speed control system of DC motor, a CompactRIO, Real-Time(RT) cntroller provided by NI(National Instruments), is used as hardware equipment. Firstly transfer function of DC motor drive system, which was a control target plant, can be acquired through System Identification Toolkit by using test input signal applied to motor and output signal from motor. And designing of pole-zero compensator satisfying desired control response performance through Control Design Toolkit, designed speed control response can be tested through Simulation Module. Finally LabVIEW program is converted to real-time program and downloaded to CompactRIO real-time controller Through experimental results to real DC motor drive system, designed speed control response is compared to simulation results.