• Title/Summary/Keyword: combined nanoimprint and photolithography

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Characteristics of hybrid mask mold for combined nanoimprint and photolithography technique

  • MOON KANSHUN;CHOI BANGLIM;PARK IN-SUNG;HONG SUNSHUM;YANG KIHYUN;LEE HEON;AHN JINHO
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.147-150
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    • 2005
  • We process a novel approach cal led combined nanoimprint and photolithography (CNP) to greatly simplify the fabrication in conventional nanoimprint lithography (NIL). In this study, a novel HMM with anti-sticking $SiO_2$ layer is introduced to improve the quality of transferred pattern. The surface property was investigated using contact angle measurement and spectrophotometer. Replicate pattern with CNP using HMM showed complete pattern transfer without defect.

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UV-nanoimprint Patterning Without Residual Layers Using UV-blocking Metal Layer (UV 차단 금속막을 이용한 잔류층이 없는 UV 나노 임프린트 패턴 형성)

  • Moon Kanghun;Shin Subum;Park In-Sung;Lee Heon;Cha Han Sun;Ahn Jinho
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.4 s.37
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    • pp.275-280
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    • 2005
  • We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

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