• Title/Summary/Keyword: colossal magnetoresistance

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Double Exchange Interaction in Colossal Magnetoresistance Compounds: $La_{1-\chi}X{\chi}MnO_3$ (초거대 자기저항 $La_{1-x}X_xMnO_3$ 화합물에서의 이중 교환 상호작용)

  • 유운종;이재동;민병일
    • Journal of the Korean Magnetics Society
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    • v.7 no.1
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    • pp.55-67
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    • 1997
  • Double exchange interaction leads to the ferromagnetism by the direct coupling between conduction electrons and magnetic ions. The most intriguing feature of double exchange is the explicit connection of the conductivity with the magnetism, which has drawn much interest in relation to the colossal magnetoresistance (CMR) recently observed in manganese oxide compounds. In this review, we explain the basic physics of double exchange and examine the classical discussions.

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Colossal Magnetoresistance in La-Ca-Mn-O

  • Jin, Sungho
    • Journal of Magnetics
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    • v.2 no.1
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    • pp.28-33
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    • 1997
  • Very large in electrical resistivity by several orders of magnitude is obtained when an external magnetic field is applied to the colossal magnetoresistnace (CMR) materials such as La-Ca-Mn-O. The magnetoresistance is strongly temperature-dependent, and exhibits a sharp peak below room temperature, which can be shifted by adjusting the composition or processing parameters. The control of lattice geometry or strain, e.g., by chemical substitution, epitaxial growth or post-deposition anneal of thin films appears to be crucial in obtaining the CMR properties. The orders of magnitude change in electrical resistivity could be useful for various magnetic and electric device applications. .

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Studies on the Fabrication and Properties of $La_{1-x}Ca_xMnO_3$ by Glycine-Nitrate Process and Solid State Reaction Method fort the CMR sensor (CMR sensor 응용을 위한 자발착화 연소합성법(GNP)과 고상반응법에 의한 $La_{1-x}Ca_xMnO_3$ 분말의 제조 및 물성에 관한 연구)

  • Kang, Young-Chul;Park, Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.137-141
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    • 1999
  • 금속 다층박막과 미세입상 합금박막에서 발견된 Giant Magnetoresistance(GMR) 현상에 고무되어 최근에는 50년대에 밝혀졌던 산화물 자기저항 재료에 관하여 새롭게 연구하고 있으며 perovskite 구조를 가지는 La$_{1-x}$ Ca/xub x/MnO$_{3}$ 박막에서 큰 자기저항을 얻었으며 이를 Colossal Magentoresistance (CMR) 이라 부른다. 본 연구에서는 La$_{1-x}$ Ca/xub x/MnO$_{3}$ 분말을 하소온도를 700-90$0^{\circ}C$로 변화시킨 고상반응법과 자발착화연소합성법(Glycine-Nitrate Process) 으로 각각 제조하였으며 비교 분석하였다. TG-DTA을 이용하여 불순물과 미반응 물질을 확인하여 적당한 하소 온도를 결정하였고 XRD를 이용하여 결정상을 분석하였다. 주사전자현미경(SEM)으로 각각 제조된 분말의 하소후 입자의 크기를 비교하였다. GNP법으로 합성한 경우가 고상반응법을 이용한 경우보다 입자의 크기가 submicron 단위로 미세하고 균질하며 고순도의 perovskite 구조를 갖는 La$_{1-x}$ Ca/xub x/MnO$_{3}$ 분말을 얻을 수 있었다.었다.

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Structural and temperature coefficient of resistance characteristics of colossal magnetoresistance Mn oxides prepared by RF sputtering

  • Choi, Sun-Gyu;Ha, Tae-Jung;Reddy, A.Sivasankar;Yu, Byoung-Gon;Park, Hyung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.361-361
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    • 2007
  • A lot of efforts have been paid to develop infrared imaging systems in last decades. Bolometer has a wide range of applications from military to commercial, such as military night vision, medical imaging system and so on. Bolometer is a resistive sensor that detects temperature changes through resistance change. To improve detecting ability, bolometer should have a good resistive film which has high temperature coefficient of resistance (TCR) value. Colossal magnetoresistance (CMR) $L_{1-x}A_xMnO_3$ (where L and A are trivalent rare-earth ions and divalent alkaline earth ions, respectively.) are received attention to apply bolometer resistive film because it has a high TCR property which was discovered in the metal to semiconductor phase transition temperature region. In this work, CMR films were deposited on various substrates in relative low substrate temperature by RF magnetron sputtering. The influence of deposition parameters such as substrate temperature, gas partial pressure, and so on have been studied. The structural and TCR properties of the films were also investigated for applying to microbolometer.

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Electronic Structures of Colossal Magnetoresistive (CMR) $Fe_{1-x}Cu_xCr_2S_4$Spinels (초거대자기저항(CMR) 현상을 보이는 Spinel $Fe_{1-x}Cu_xCr_2S_4$의 전자구조 연구)

  • 박민식;윤석주;민병일
    • Journal of the Korean Magnetics Society
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    • v.8 no.3
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    • pp.111-117
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    • 1998
  • Recent discovery of colossal magnetoresistance (CMR) phenomena in perovskite manganese oxides has evoked great interest for its physical peculiarity and the possible industrial application. Besides manganese oxides, CMR phenomena is also observed in $Tl_2Mn_2O_7$ with pyrochlore structure and in Cr-based chalcogenide with spinel structure. In this paper, we have studied electronic structures of Cr-based chalcogenide spindles $Fe_{1-x}Cu_xCr_2S_4$ at x=0.0, 0.5, 1.0 using the linearized muffin-tin orbital (LMTO) band method within the local density approximation (LDA). The characteristic resistivity for x=0.0, 0.5 could be explained qualitatively in terms of the half-metalic electronic structure and the Jahn-Teller effect. Especially, the half-metallic nature appearing in the metallic temperature regime is well descibed by the proposed conduction model for x=0.0, 0.5, 1.0. We have suggested, based on the conduction model, that the CMR phenomena observed in these compounds are closely correlated with the obtained half-metallic electronic structure.

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