Fabrication of $Cr^{3+}$ doped sapphire single crystal by high temperature and pressure acceleration method
(고온가압 확산법에 의한 $Cr^{3+}$ 고용 사파이어 단결정의 제조)
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- Journal of the Korean Crystal Growth and Crystal Technology
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- v.9 no.1
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- pp.29-33
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- 1999