• 제목/요약/키워드: coercive field

검색결과 349건 처리시간 0.025초

다양한 열처리 분위기에 따른 SBT 커패시터의 누설전류 특성 (Leakage Current Properties of SBT Capacitors with various Annealing Atmosphere)

  • 조춘남;오용철;김진사;신철기;최운식;김충혁;홍진웅;이준웅
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
    • /
    • pp.77-81
    • /
    • 2003
  • The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and $2.13{\times}10^{-9}[A/cm^2]$ respectively.

  • PDF

PLZT박막의 제조 및 유전 특성에 관한 연구 (A Study on the Preparation and Dielectric Properties of the PLZT Thin Films.)

  • 박준열;박인길;이성갑;이영희
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
    • /
    • pp.187-191
    • /
    • 1995
  • Thin film of the (Pb$\_$1-x/La.sub x/)(Zr$\_$0.25/Ti/Sub 0.48/) O$_3$(x=0~13[at%]) were prepared by Sol - Gel method. Multi-layer PLZT thin films were fabricated by spin-coating on Pt/Ti/SiO$_2$/Si substrate. The crystallinity and microstructure of the films were investigated with the sintering condition. At the sintering temperature of of 600[$^{\circ}C$], the perovskite phase was dominat. PLZT(11/52/48)thin films sintered at 600[$^{\circ}C$], 1[hr] had good dielectric constant (1236), dielectric loss (2.2[%]), remanent polarization (1.38[${\mu}$C/$\textrm{cm}^2$] and coercive field(16.86[ kV/cm]) respectively.

  • PDF

졸-겔법에 의한 PLZT 합성과 강유전성 박막 제조 (Ferroelectric PLZT Thin Films Prepared by Sol-Gel Route)

  • 오영제;김정기;주기태;현상훈;정형진
    • 한국세라믹학회지
    • /
    • 제29권11호
    • /
    • pp.870-876
    • /
    • 1992
  • Lead lanthanum zirconate titanate (PLZT, 6/65/35) powders, crack-free and dense thin films have been prepared by polymeric sol-gel process. Pyrolysis of the gel, crystallization and optical transmittance behavior of the PLZT thin film onto sapphire substrate have been studied. Esterification occurs during synthesis of PLZT complexation. Crystalline Pb phase was transiently formed near 450$^{\circ}C$. Content of perovskite phase in the films were increased with increasing thickness of film, but the kinetics of formation of perovskite phase in films was slower than that of powders. Transmittance of the films was decreased with increasing the temperature of heat treatment. Ferroelectric hysteresis loop measurements indicated increments of remanent polarization and coercive field for plenty more of perovskite phase.

  • PDF

CuO의 첨가량에 따른 Ni-Zn 페라이트의 소결 및 자기적 특성 변화

  • 김성태;김진호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
    • /
    • pp.216-216
    • /
    • 2009
  • $(Ni_{1-x-y}Zn_xCu_y)Fe_2O_4(x=0.45,\;0{\leq}y{\leq}0.3)$ was synthesized by conventional ceramic processing, and the sintering behavior and the magnetic properties of which were studied as functions of CuO content and sintering temperature. Both the densification and the grain growth rates were significantly enhanced with the increase of CuO content, while abnormal grain growth occurred when the samples of $y{\geq}0.2$ were sintered above $950^{\circ}C$. Saturation magnetization and coercive field were mainly influenced by the densification and grain growth of the specimens, respectively.

  • PDF

스퍼터링 조건에 따른 PZT 박막의 특성에 관한 연구 (The properties of PZT thin film at various sputtering condition)

  • 김홍주;박영;정규원;박기엽;송준태
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
    • /
    • pp.997-1000
    • /
    • 2001
  • Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$(PZT) thin films have been prepared by rf-magnetron sputtering methods and investigated the structural and electrical properties. In order to investigate the effects of sputtering conditions, input power was controlled during deposition. Crystallization process and microstructure of PZT thin films were largely affected by input power. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt/Ti bottom electrode. The dielectric constants and polarization of PZT thin films were increased with increasing input power, and the coercive electric field was decreased with increasing input power . The dielectric constant of PZT thin films with input power 150 W was 966 at 1 kHz. we, authors, proposed that preferred orientation of PZT thin films were controlled by input power in sputtering methods.

  • PDF

연자성 박막 제지의 형성 및 특성 (Fabrication and characteristics of soft magnets on paper)

  • 김용성;신경호;김광호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
    • /
    • pp.96-99
    • /
    • 2001
  • The formation of soft magnets on paper(SMOP) is proposed for the first time and we have demonstrated it successfully. Iorn was used to form the soft magnet thin film on paper. And Cr layer was used as a buffer layer because the roughness of substrate(paper) is not negligible. The maximum magnetization of Cr/Fe/Cr/Paper(Fe:5000${\AA}$) is about 1000 [emu/cc] and the coercive field is about 80 [Oe.]. It is necessary to reduce the coercivity and to enlarge the magnetization value of SMOP to perform a good soft magnetic characteristics on paper. On, the permalloy material is the proper candidate for its high permeability, low coercivity and high magnetization values.

  • PDF

RTA 온도가 PZT 박막의 누설전류에 미치는 영향 (Effect of RTA temperature on the leakage current characteristics of PZT thin films)

  • 김현덕;여동훈;임승혁;송준태
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
    • /
    • pp.709-712
    • /
    • 2001
  • The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

  • PDF

Effects of Two-Step Annealing Process on the Pulsed Laser Ablated Lead Zirconate Titanate Thin Films

  • Rhie, Dong-Hee
    • KIEE International Transactions on Electrophysics and Applications
    • /
    • 제3C권2호
    • /
    • pp.43-47
    • /
    • 2003
  • Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

Ar/$O_2$ 비에 따른 (Ba,Sr)$TiO_3$ 박막의 구조 및 전기적 특성 (Structural and Electrical Properties of (Ba,Sr)$TiO_3$[BST] Thin Films with Ar/$O_2$ ratio)

  • 신승창;이문기;류기원;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
    • /
    • pp.243-246
    • /
    • 1998
  • (Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The structural, dielectric and electrical properties of BST thin films were investigated with Ar/O$_2$ ratio. Dielectric constant and dielectric loss of the BST thin film were about 1020 and 2.0[%], respectively. (at RF power 80W, post annealing temperature $650^{\circ}C$, deposition pressure of 5mTorr and Ar/O$_2$=80/20). For the BST(Ar/O$_2$=80/20) thin film with Polarization switching cycles of 10$^{10}$ , remanent polarization and coercive field were 0.084[$\mu$C/cm$^2$], 1.954[kV/cm], respectively.

  • PDF

이온빔 스퍼터링법으로 제조된 SBN 박막의 특성 (SBN Thin films Prepared by Ion Beam Sputtering method)

  • 이동근;장재훈;이희영
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
    • /
    • pp.1144-1147
    • /
    • 2002
  • Ferroelectric $Sr_xBa_{1-x}Nb_2O_6(0.25{\leq}x{\leq}0.75)$ thin films were prepared by the Ion Beam Sputtering method. Deposit onto Pt/Ti/$SiO_2$/Si(100) substrates. The deposited thin films were heat-treated for crystallization. Microstructure and crystallization behavior were examined using FE-SEM, XRD. Ferroelectric hysteresis were measured. The measured remanent polarization and coercive field values were $38{\mu}C/cm^2$ and 120kV/cm, respectively.

  • PDF