• 대한치과보철학회지
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• 제34권3호
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• pp.475-488
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• 1996

The opaque porcelain layer of porcelain-fused-to-metal(PFM) restoration is critical for the success of PFM restoration because it is the first layer placed over the treated alloy. But, the methods of opaquing technique have not been confirmed. Usually, the one layer method and two layer method have been used for the application of opaque porcelain. In the past, alloys with porcelain veneers which have been used successfully have contained various precious metals. Recent increase in the cost of precious metals stimulates considerable interest in nonprecious alloys. Although nickel-chromium alloys and nickel-chromium-beryllium alloys have been widely used, the use of cobalt-chromium alloys would be gradually increased with elimination of any potential risk of nickel-related allergic responses and/or beryllium-related toxic responses. This investigation examined one- and two-layer opaque porcelain applications to determine the effect on the bond strength of titanium added cobalt-chromium metal ceramic alloy. Bond strength of Ceramco II porcelain to titanium added cobalt-chromium alloy(2Dentitan) and gold-platinum-palladium alloy(Degudent H) were evaluated by direct shear bond strength test with Instron universal testing machine. The results were as follows; 1. When the mean shear bond strength of each experimental group were compared in $0.25cm^2$ unit area, the titanium added cobalt-chromium alloy/two layer method exhibited the greatest strength(79.7kg), followed by titanium added cobalt-chromium alloy/one layer method(76.2kg), gold-platinum-palladium alloy/two layer method(71.4kg), gold-platinum-palladium alloy/one layer method(64.2kg). 2. No significant differences in bond strength were recorded between the two opaquing techniques for gold-platinum-palladium alloy and titanium added cobalt-chromium alloy. 3. No significant differences in bond strength were recorded between the gold-platinum-palladium alloy and the titanium added cobalt-chromium alloy.

• 전기화학회지
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• 제6권2호
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• pp.158-160
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• 2003

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400 F/g (specific capacitance) and good cycleability. But, it had serious demerits of low voltage range under 0.5 V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. We report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over 250 F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around 100 F/g capacitance. This capacitance was only electric double layer capacitance of active surface area. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Itis very hard to reach resistive layer. So, we have studied on pretreatment of electrode to contain working ions easily. We'll report more details.

• 한국세라믹학회지
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• 제38권9호
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• pp.782-786
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• 2001

Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

• 한국재료학회지
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• 제13권11호
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• pp.711-716
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• 2003

Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• 한국결정성장학회지
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• 제14권2호
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• pp.63-67
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• 2004

층상 구조의 cobalt dedecanesulfate 화합물을 합성하였다. 여러 온도 영역에서 상 전이가 일어나면서 층간 거리의 큰 변화가 생겼다. 상온에서 단일 층 구조의 cobalt dodecanesulfate 화합물이 고온에서 탈수된 화합물의 이중층의 구조로 변화되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.93-96
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• 2001

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400F/g (specific capacitance) and good cycleability. But, It had serious demerits of low voltage range under 0.5V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. we report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over than 250F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around l00F/g capacitance. This capacitance was only surface EDLC. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Its very hard to reach resistive layer. So, we have studied on pretreatment of electrode to contain working ions easily. We'll report more details.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.93-96
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• 2001

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400F/g (specific capacitance) and good cycleability. But, It had serious demerits of low voltage range under 0.5V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. we report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over than 250F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around 100F/g capacitance. This capacitance was only surface EDLC. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Its very hard to reach resistive layer. So, e have studied on pretretmetn of electrode to contain working ions easily. We'll report more details.

• 한국수소및신에너지학회논문집
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• 제20권2호
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• pp.116-124
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• 2009

We investigated the influences of cobalt coating deposited by DC electroplating on the ferritic stainless steel, STS 430, as a protective layer on a metallic interconnect for SOFC applications. Cobalt coated STS 430 revealed a uniform and denser-packing oxide surface and a reduced growth rate of $Cr_2O_3$ scales after oxidation at $800^{\circ}C$in air. Cobalt coating layer was oxidized to $CoCo_2O_4$ and Co containing mixed oxide spinels such as $Co_2CrO_4$, $CoCr_2O_4$, and $CoCrFeO_4$. The area specific resistance value of Co coated sample was $0.020\;{\Omega}cm^2$ lower than that of uncoated at $800^{\circ}C$ in air during 500 h. After 1000 h oxidation, cobalt oxide coating layer suppressed chromium outward diffusion.

• 대한화학회지
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• 제18권6호
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• pp.391-399
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• 1974

금속 코발트의 부식과 부동화현상들을 전기화학적 실험방법들을 써서 연구하였다. Tafel slope, Flade potential의 pH의존도, 부식속도의 반응역학적 데이타등으로 부터 코발트와 붕산염완충용액 사이 계면에서 일어나는 부식과 부동화 과정들의 메카니즘을 도출하였다. 금속표면에 흡착된 히드록실기가 표면산화와 부동화막의 형성에 참여하는 것으로 나타났다. 표면막의 성장속도에 관한 데이타로 보아 부동화피막은 "전기장에 의한-이온-이동" 과정에 의하여 성장하는 것으로 보인다. 측정된 표면막의 두께는 약 10${\AA}$에서 20${\AA}$에 이르렀다.