• Korean Chemical Engineering Research
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• v.48 no.4
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• pp.434-439
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• 2010

NCO terminated polyurethane prepolymers were synthesized from isophorone diisocyanate(IPDI), poly(tetramethyleneglycol)(PTMG) and dimethylol propionic acid(DMPA). Subsequently, aminosilane terminated prepolymers were prepared by capping the NCO groups of polyurethane prepolymers with different moles of aminopropyl triethoxysilane(0~0.02 mole) as a coupling agent. The average particle size of the silylated polyurethane solutions increased with increasing APS content. Also, the prepared coating films showed better thermal stability and pencil hardness than pure waterborne polyurethane.

• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.251-257
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• 2009

In this study, we fabricated nickel oxide thin film for lithium based electrolyte using sol-gel method. This film was deposited by dip-coating method with mixed solvent of DameH (N,N-dimethylaminoethanol) and DI water. As changing the ratio between DmaeH and DI water, nickel oxide thin film was presented in different charge density and optical transmittance because they were shown various thickness. It was accounted for changing viscosity and density by the ratio of DmaeH and DI water. The thin film synthesized with 1 : 1 ratio of DmaeH and DI water was expressed best electrochromic performance in lithium based electrolyte, because of thick thickness but porous structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.203-212
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• 1996

Applicability of SiC coating through CVD process and PCS(polycarbosilane) impregnation for the oxidation resistance and mechanical properties of C/C composite was studied. The SiC layer coated by CVD was deposited uniformly on the C/C composite, whereas the SiC converted from PCS impregnation wetted around individual carbon fiber. The PCS-impregnated C/C composite exhibited a significant increase of bending strength in comparison with as received C/C composite. This increase in the mechanical property could be attributed to the high bonding strength between fibers due to an impregnated SiC phase. The PCS-impregnated C/C showed 25% improvement in density, 3.5 times higher MOR and 2.8 times higher oxidation resistance compared to the as-received C/C. The increments due to PCS impregnation were more effective than CVD process.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1174-1177
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• 2006

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1499-1502
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• 2005

Dense $BaMgAl_{10}O_{17}:Eu^{2+}$ phosphor particles with a spherical shape have been synthesized through spray pyrolysis method using basic aluminum nitrate precursor as a spray solution. This $BaMgAl_{10}O_{17}:Eu^{2+}$ particles prepared by the spray pyrolysis have shown the stronger emission intensity compared to the commercially-available $BaMgAl_{10}O_{17}:Eu^{2+}$. However, thermal stability of the BAM:Eu b lue phosphor is very poor due to changing from $Eu^{2+}$ to $Eu^{3+}$ at the thermal process, so brightness of the phosphor decreases. To improve the thermal stability of the dense BAM:Eu phosphor, the spherical BAM:Eu particles were coated with pure $BaMgAl_{10}O_{17}$ layer using the hydrolysis reaction in a solution system. The synthesized powders were characterized by XRD, SEM and PL. On the other hand, the emission properties of the BAM:Eu phosphors coated with $BaMgAl_{10}O_{17}$ layer before and after thermal treatment at $500^{\circ}C$ for 30 min were estimated under VUV excitation. The brightness of the coated phosphor was higher than that of the uncoated phosphor. Also, the coating thickness of BAM layer in the BAM:Eu particles was optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.316-323
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• 1995

A vital step in magnetic tape manufacturing is the surface modification of polymer substrate prior to ink application. A critical element for good adhesion of magnetic ink on polymeric substrate is the ability to join ink in cost-effective manner. Corona discharging is one of the effective methods of modifying polymer surface to improve adhesion while maintaining the desirable properties of the film itself. Surface treatment by corona which is exposure of film surface to electron or ion bombardment, rather than mere exposure to active species, like atomic oxygen or ozone, can enhance adhesion by removing contaminant, electret, roughening surface, and/or introducing reactive chemical groups. Reactive neutrals, ions, electron and photons generated during the corona treatment interact simultaneously with polymers to alter surface chemical composition, wettability, and thus film adhesion. However, it is highly recommended that extensive chains scission be avoided because it can lead to side-effect by forming sticky matter, resulting in dropouts. This paper reviews principles of surface preparation of polymer substrate by corona discharging. In addition, the experimental section provides a description of parameter optimization on corona discharging treatment and its side-effect. Experimental results are discussed in terms of surface wetting as determined by contact angle measurements.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1379-1381
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• 1998

Powder electroluminescent device (PELD) structured conventionally dielectric and phosphor layer, between electrode and their layer fabricated by screen printing splaying or spin coating method. To promote performance of PELDs, we approached the experiments for different structure and thickness variation of PELD. Thickness variation($30{\mu}m{\sim}130{\mu}m$) was taken. To investigate electrical and optical properties of PELDs, EL spectrum, transferred charge density using Sawyer-Tower's circuit brightness was measured. Variation of structure in PELDs was as follows: WK-1 (ITO/BaTiO3/ZnS:Cu/Silver paste), WK-2 (ITO/BaTiO3/ZnS:Cu/BaTiO3/ZnS:Silver paste), WK-3 (ITO/BaTiO3/ZnS:Cu/BaTiO3/Silver paste), WK-4(ITO/BaTiO3+ZnS:Cu/Silver paste) As a result, structure of the highest brightness appeared WK-4 possessed 60 ${\mu}m$ thickness. The brightness was 2719 cd/$m^2$ at 100V, 400Hz.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.455-460
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• 2005

Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.