• Journal of the Semiconductor & Display Technology
• /
• v.13 no.4
• /
• pp.21-25
• /
• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.77-77
• /
• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Journal of Conservation Science
• /
• v.36 no.6
• /
• pp.505-510
• /
• 2020

In this study, the anti-stain effect of the Traditional Myoung-oil, which has been reproduced through traditional method, the Clean Myoung-oil, which was developed in an eco-friendly method through scientific analysis of Traditional Myoung-oil, and the perilla oil, which is the raw material of Myoung-oil and is currently used as a finishing agent when repairing wooden cultural properties was evaluated. As a result of the evaluation, perilla oil showed almost no anti-stain effect, whereas both types of Myoung-oil showed high anti-stain effect. However, it was confirmed that the anti-stain effect was significantly reduced after 4 weeks of exposure to the strain when Myoung-oil was diluted with terpene oil, a natural solvent. Thus, it was considered that the amount of treatment in the wood affected the anti-stain effect of Myoung-oil. In other words, in constructing wooden buildings, Myoung-o il is more suitable as a finishing agent to suppress mold growth than perilla oil. And, in order to increase the applicability of Myoung-oil, it is suggested that additional research on the optimal treatment amount and treatment method that can inhibit mold growth inhibition in outdoor environments is necessary.

• Korean Chemical Engineering Research
• /
• v.61 no.1
• /
• pp.32-38
• /
• 2023

In this study, the electrochemical properties of dopamine coated silicon/silicon carbide/carbon(Si/SiC/C) composite materials were investigated to improve cycle stability and rate performance of silicon-based anode active material for lithium-ion batteries. After synthesizing CTAB/SiO₂ using the Stöber method, the Si/SiC composites were prepared through the magnesium thermal reduction method with NaCl as heat absorbent. Then, carbon coated Si/SiC anode materials were synthesized through polymerization of dopamine. The physical properties of the prepared Si/SiC/C anode materials were analyzed by SEM, TEM, XRD and BET. Also the electrochemical performance were investigated by cycle stability, rate performance, cyclic voltammetry and EIS test of lithium-ion batteries in 1 M LiPF₆ (EC: DEC = 1:1 vol%) electrolyte. The prepared 1-Si/SiC showed a discharge capacity of 633 mAh/g and 1-Si/SiC/C had a discharge capacity of 877 mAh/g at 0.1 C after 100 cycles. Therefore, it was confirmed that cycle stability was improved through dopamine coating. In addition, the anode materials were obtain a high capacity of 576 mAh/g at 5 C and a capacity recovery of 99.9% at 0.1 C/0.1 C.

• ETRI Journal
• /
• v.36 no.5
• /
• pp.847-855
• /
• 2014

We developed a highly refractive index planarization layer showing a very smooth surface for organic light-emitting diode (OLED) light extraction, and we successfully prepared a highly efficient white OLED device with an embossed nano-structure and highly refractive index planarization layers. White OLEDs act as an internal out-coupling layer. We used a spin-coating method and two types of $TiO_2$ solutions for a planarization of the embossed nano-structure on a glass substrate. The first $TiO_2$ solution was $TiO_2$ sol, which consists of $TiO_2$ colloidal particles in an acidic aqueous solution and several organic additives. The second solution was an organic and inorganic hybrid solution of $TiO_2$. The surface roughness ($R_a$) and refractive index of the $TiO_2$ planarization films on a flat glass were 0.4 nm and 2.0 at 550 nm, respectively. The J-V characteristics of the OLED including the embossed nano-structure and the $TiO_2$ planarization film were almost the same as those of an OLED with a flat glass, and the luminous efficacy of the aforementioned OLED was enhanced by 34% compared to that of an OLED with a flat glass.

• Corrosion Science and Technology
• /
• v.4 no.4
• /
• pp.140-146
• /
• 2005

Fossil fired power plant produces the electric energy by using a thermal energy by the combustion of fossil fuels as like oil, gas and coal. The exhausted flue gas by the combustion of oil etc. contains usually many contaminated species, and especially sulfur-content has been controlled strictly and then FGD (Flue Gas Desulfurization) facility should be installed in every fossil fired power plant. To minimize the content of contaminations in final exhaust gas, high corrosive environment including sulfuric acid (it was formed during the process which $SO_2$ gas combined with $Mg(OH)_2$ solution) can be formed in cooling zone of FGD facility and severe corrosion damage is reported in this zone. These conditions are formed when duct materials are immersed in fluid that flows on the duct floors or when exhausted gas is condensed into thin layered medium and contacts with materials of the duct walls and roofs. These environments make troublesome corrosion and air pollution problems that are occurred from the leakage of those ducts. The frequent shut down and repairing works of the FGD systems also demand costs and low efficiencies of those facilities. In general, high corrosion resistant materials have been used to solve this problem. However, corrosion problems have severely occurred in a cooling zone even though high corrosion resistant materials were used. In this work, a new technology has been proposed to solve the corrosion problem in the cooling zone of FGD facility. This electrochemical protection system contains cathodic protection method and protection by coating film, and remote monitoring-control system.

• Corrosion Science and Technology
• /
• v.6 no.4
• /
• pp.147-153
• /
• 2007

This study sought to investigate the reaction of Co-binder containing tungsten with molten zinc. Four kinds of Co-W alloys (pure, 10%W, 20%W, 30%W) were prepared using the powder metallurgy method. The specimens were immersion-tested in molten pure zinc baths at $460^{\circ}C$. To evaluate the corrosion property in molten zinc, the weight loss of the specimen was measured after the immersion tests at different immersion times (10~300 min.). Co-10%W alloys, compared with pure cobalt, showed no effect of tungsten addition on the reaction rate in molten zinc. The relationship between the weight loss and the square root of immersion period represents a straight line in both pure cobalt and Co-10%W alloy. The Co-Zn reaction layer in Co- 1O%W alloy consists of $\gamma2$, $\gamma1$, $\gamma$ and ($\beta1$ phases. The rate of weight loss significantly increases and the weight loss behavior is not well accord with the linear relationship as the tungsten content in the Co-W alloy increases. The $\beta1$ layer was not formed on the Co-20%W alloy and neither was a stable Co-Zn intermetallic compound layer found on the Co-30%W alloy. The main cause of increase in reaction rate with increasing tungsten content is related with the instability of the Co-Zn reaction phases as seen on micro-structural analysis.

• Applied Chemistry for Engineering
• /
• v.20 no.3
• /
• pp.279-284
• /
• 2009

The formation of mesoporous pores in the microporous mordenite crystals was performed by controlled silica extraction on alkaline treatment. Inner tunable mesopore size could be controlled by changing the concentration of alkaline solution. The pore structure of mordenite zeolite was studied by instrumental analysis after alkaline-treatment. To obtain the cage type mesopores, Ti-coating on the ourside mordenite crystals before alkaline treatment was investigated to be the most effective. Polymeric chiral salen Co (III) complexes were successfully encapsulated in mesoporous mordenite zeolite by "ship-in-a-bottle" method. The heterogeneous catalyst could be applied in asymmetric ring opening of epichlorohydrine by water. It showed very excellent enantioselectivity with a high yield in the catalysis.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.2
• /
• pp.58-61
• /
• 2009

The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.

• Journal of the Korean Chemical Society
• /
• v.34 no.5
• /
• pp.396-403
• /
• 1990

We describe how to design and construct a LPCVD (Low Pressure Chemical Vapor Deposition) apparatus which can be applicable to the study of reaction mechanism in general CVD experiments. With this apparatus we have attempted to make diamond like carbon films on the p-type (111) Si wafer from (H$_2$ ＋ CH$_4$) gas mixtures. Two different methods have been tried to get products. (1)The experiment was carried out in the reactor with two different inlet gas tubes. One coated with phosphoric acid was used for supplying microwave discharged hydrogen gas stream, and methane has been passed through the other tube without the microwave discharge. In this method we got only amorphous carbon cluster products. (2) The gas mixture (H$_2$ ＋ CH$_4$) has been passed through the discharge tube with the Si wafer located in and/or near the microwave plasma. In this case diamond-like carbon products could be obtained.