• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.6
• /
• pp.504-510
• /
• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• Journal of the Korean Ceramic Society
• /
• v.40 no.5
• /
• pp.501-505
• /
• 2003

SrZrO$_3$ resistive oxides on Ag tapes were prepared by the sol-gel and dip coating method to investigate the effect of PVP content and drying condition on microstructure of the films. Although the film thickness increased with the addition of PVP, the amount of PVP and heat treatment were not effective to reduction of formation of microcracks at the films. However, lower drying temperature and longer drying time were beneficial to control the microcracks of the SrZrO$_3$ films, indicating that the microcracking of the films was governed primarily by the drying condition.

• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.309-314
• /
• 1996

We found that SOG which had been used in plarnarization of VLSI circuit fabrication at present could be used as a resist material for AFM lithography. In this experiment on the basis of previous studies, we improved the process flexibility by controlling the coating film thickness, etching time, etching selectively and proper applied voltage on the pattern size to apply for practical VLSI lithography process. We obtained pattern with the current of 5 nA at 60 V. The line width was 800 $\AA$. With the developed flexibility of SOG as a resist material, AFM lithography will be a expedient technique in the next generation DRAM fabrication.

• Journal of Pharmaceutical Investigation
• /
• v.22 no.2
• /
• pp.133-137
• /
• 1992

A novel oral controlled release tablet which may offer more uniform drug level in the body than simple zero-order was developed. The tablet is composed of three layers; outer film layer, middle part compression-coated hydroxypropylmethylcellulose (HPMC) matrix layer, and inner core layer. Each layer contains nicardipine HCl as a model drug. In vitro dissolution test showed that the tablet released the drug in clear three steps; a rapid initial release, followed by a constant rate of release, and then a second phase of fast release of drug. The dissolution characteristics could be modified easily by changing the grade of HPMC, thickness of matrix layer, content of methylcellulose in matrix layer, content of active ingredient in each layer. The pH of dissolution medium did not affect the release profile. This three-step release system is expected to raise the blood concentration rapidly to effective level and to maintain effective blood level longer than simple slow-release systems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.660-664
• /
• 2008

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness, chemical stability, low friction and good adhesion properties. In this study, we investigated the effect of DC power on the characteristics of TiN thin films deposited on Si and glass substrates by DC magnetron sputtering using TiN target. We made TiN films of 300 nm thickness with various DC powers. The structural properties of films are investigated by x-ray diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester. The rms roughness was measured by atomic forced microscopy (AFM). In the result, TiN films had the smooth surface and exhibited (111) directions with the increase of DC Power. Also, especially in case of 175 W DC power, TiN film exhibited the maximum hardness about 8 GPa, and the critical load near 25.

• Journal of Biosystems Engineering
• /
• v.33 no.4
• /
• pp.282-287
• /
• 2008

Love wave is one of the shear horizontal waves and it can propagate between two layers in liquid without energy loss. The SAW (surface acoustic wave) sensor using Love wave is very useful for real time measurement of the viscosity of liquid with high sensitivity. In this study, the 77 MHz and 155 MHz Love wave SAW sensors were fabricated and use to measure the viscosity of low viscous liquid. To generate the surface acoustic wave, the inter-digital transducers were fabricated on the quartz crystal wafer. In order to obtain the optimal thickness of the coating film (novolac photoresist) generating the Love wave on the surface of SAW device, theoretical calculation was performed. The performances of fabricated Love wave SAW sensors were tested. As test liquid, pure water and glycerol solutions having different concentrations were used. Since the determination coefficients of the regression equations for measuring the viscosity of liquid are greater than 0.98, the developed Love wave SAW sensors in this study will be very useful for precise measurement of viscosity of liquid.

• Korean Journal of Materials Research
• /
• v.17 no.3
• /
• pp.125-131
• /
• 2007

[ $TiO_{2}-solution$ ] was aaded in $SiO_{2}-solution$ by various composition. $SiO_{2}-TiO_{2}$ thin films were obtained by the dip-coating method on the $SiO_{2}$ glass substrates, and then heat-treated at various temperature. Nano-size $TiO_{2}$ particles dispersed $SiO_{2}-TiO_{2}$ films showed absorption peak by quantum size effect at short wavelength region $350{\sim}400nm$, which made them good candidates for non-linear optical materials and photo-catalytic materials. The thickness of $SiO_{2}-TiO_{2}$ films were $300{\sim}430nm$. The contact angle of $SiO_{2}-TiO_{2}$ films for water was $5.3{\sim}47.9^{\circ}$, and therefore it is clear that $SiO_{2}-TiO_{2}$ films have super hydrophilic properties and the self-cleaning effects.

• Progress in Superconductivity
• /
• v.8 no.1
• /
• pp.22-26
• /
• 2006

Total Fluorine content in the precursor solution for MOD processing of YBCO coated conductors can be significantly reduced by synthesizing precursor solution with F-free Y & Cu precursor and Barium trifluoroacetate(TFA). It was shown that crack-free and uniform precursor films were formed after calcinations in humidified oxygen atmosphere. Less than 2 hours are required to finish the calcination process, and XRD measurement shows that $BaF_2,\;CuO,\;and\;Y_2O_3$ are major constituent of calcined precursor films. Film thickness after calcination was measured to be ${\sim}2.8$ um by applying slot-die coating method. In particular, addition of Samarium shows critical current of Ic=226 A/cm-w($Jc=3.4\;MA/cm^2$). Also discussed are recent developments in the reel-to-reel processing using F-free Y & Cu precursor solutions. It is shown that uniform and fast processing route to YBCO coated conductor with high Ic can be provided by employing F-free Y & Cu precursor solutions in MOD process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.8
• /
• pp.694-699
• /
• 2000

S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.05a
• /
• pp.169-172
• /
• 2002

This study demonstrated the feasibility of using tape-casting followed by sintering as a low-cost alternative for coating glass-ceramic or glass film on a metal substrate. The process has been successfully used to fabricate a glass-on-stainless steel and a glass-ceramic-on-molybdenum electrostatic chuck(ESC) with the insulating layer thickness about $150{\mu}{\textrm}{m}$. Electrical resistivity data of the coaling were obtained between room temperature and 55$0^{\circ}C$; although the resistivity values dropped rapidly with increasing temperature in both coatings, the glass-ceramic still retained a high value of $10^{10}$ ohm-cm at $500^{\circ}C$. Clamping pressure measurements were done using a mechanical apparatus equipped with a load-cell at temperatures up to $350^{\circ}C$ and applied voltages up to 600V; the clamping behavior of all ESCs generally followed the voltage-squared curve as predicted by theory. Based on these results, we believe that we have a viable technology for manufacturing ESCs for use in reactive-ion etch systems.