• Journal of Microbiology and Biotechnology
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• 제20권9호
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• pp.1348-1350
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• 2010

Conidia of Beauveria bassiana ARSEF-7060, produced in millet amended with plant oils such as sunflower, corn, or cotton seed oil, were exposed to $45^{\circ}C$ of wet heat for 90 min. Conidia from millet+corn oil medium had the highest thermotolerance [$LT_{50}$ (median survival time): 45.7 min]. The mycotized millet grains were coated with each of the same plant oils as a granular formulation and subjected to $50^{\circ}C$ of dry heat for 8 h. Corn oil coating ($LT_{50}$: 8.68 h) was superior to sunflower and cotton seed oil coatings, suggesting the feasibility of using corn oil to increase conidial thermotolerance.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.79-82
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• 2003

We prepared YBCO coated conductor by direct deposition of YBCO on Ag substrate by a MOCVD method. The Ag substrate was only prepared by cold rolling. The XRD data of the as-rolled Ag tape showed the formation of dominant (420) oriented grains. Processing variables were the oxygen partial pressure (Po$_2$) and deposition temperature (T$_{d}$). It was found that the a-axis oriented films were grown at lower T$_{d}$ below 80$0^{\circ}C$, while the c-axis oriented films were grown about 80$0^{\circ}C$. The surface of the films consisted of a second inclusion phase dispersed in the YBCO matrix. The Cu-rich phase regions were observed at the YBCO/Ag interface probably due to the inter-diffusion of Ag and Cu. Cu.

• 한국안전학회지
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• 제19권1호
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• pp.72-76
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on pt-coated electrode(Pt/$TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with annealing conditions were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$,/TEX> and grains largely grew in oxygen annealing atmosphere. The maximum renanent polarization and the coercive electric field with annealing conditions are 12.40C/$cm^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 2.13${\times}10^{-10}A/cm^2$, respectively.

• 한국표면공학회지
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• 제52권3호
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• pp.111-116
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• 2019

Chromium was coated on a steel substrate by the Cr(III) electroplating method, and corroded at $500-900^{\circ}C$ for 5 h in $N_2/0.1%H_2S-mixed$ gas to study the high-temperature corrosion behavior of the Cr(III) coating in the highly corrosive $H_2S-environment$. The coating consisted of (C, O)-supersaturated, nodular chromium grains with microcracks. Corrosion was dominated by oxidation owing to thermodynamic stability of oxides compared to sulfides and nitrides. Corrosion initially led to formation of the thin $Cr_2O_3$ layer, below which (S, O)-dissolved, thin, porous region developed. As corrosion progressed, a $Fe_2Cr_2O_4$ layer formed below the $Cr_2O_3$ layer. The coating displayed relatively good corrosion resistance due to formation of the $Cr_2O_3$ scale and progressive sealing of microcracks.

• 열처리공학회지
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• 제34권2호
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• 한국결정성장학회지
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• 제8권4호
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• pp.645-650
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• 1998

계면유도 침전법을 이용, 알루미나와 이트리아를 코팅한 SiC 분말을 사용하여 제조된 탄화규소의 물성을 관찰하였다. $Al_2(SO_4)_3$과 $Y_2(SO_4)_3$의 수용액에서 요소를 분해시켜 수화물 및 탄화물의 전구체로 구성된 석출물을 SiC의 분말 표면에 코팅한 후 하소하여 알루미나와 이트리아가 코팅된 탄화규소 시편을 제조하였다. $1900^{\circ}C$에서 소결한 탄화규소는 약 97.8%의 소결밀도를 나타내었으며, 소결 후 annealing을 행한 시편은 $\beta$상 탄화규소에서 $\alpha$상 탄화규소로의 상전이가 일어나 주상입자가 형성되었다. 균열 전파시 주상입자를 중심으로 입계간 균열(intergranular crack)이 일어났으며, 주상입자의 pullout 효과 의한 균열길이의 증가로 SiC 소결체의 인성이 증진되는 것으로 나타났다. annealing 시간이 3시간 이내인 경우에는 소결조제의 첨가량이 적은 시편의 파괴인성치가 높았으나 그 차이는 미미하였고, annealing 시간이 길어짐에 따라 소결조제의 양에 따른 인성의 차이는 거의 나타나지 않았다. 이러한 결과는 annealing 시간이 길어짐에 따라 입자의 정단축비(aspect ratio)가 커지고 주성입자에 의한 pullout 효과가 인성증진의 주된 인자가 되어, 소결조제의 양과 관련된 영향이 적었기 때문인 것으로 사료되었다.

• 한국결정성장학회지
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• 제9권1호
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• pp.113-118
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• 1999

$AlCl_3{\cdot}6H_2O$를 출발원료로 침전법에 의해 알루미늄 수화물을 합성하였다. 용액의 pH에 따라 amorphous, boehimite, bayerite, nordstrandite 상을 얻었고, 수산화 알루미늄은 열처리 온도가 증가함에 따라 $\gamma$, $\delta$, $\theta$를 거쳐${\alpha}-Al_2O_3$로 전이되었으며, 입자크기도 증가하였다. ${\gamma}-Al_2O_3$ 를 담금피막법(dip-coating method)으로 중간층 위에 코팅하였고, 비교를 위해 비지지체 분리막도 준비하였다. 지지체 분리막은 작은 입자(grain)들로 구성된 다공질 구조(porous structure)를 나타내었지만, 비지지체 분리막에서는 상호 연결된 큰 입자(grain)들이 나타났다. 지지체 분리막에서 보다 비지지체 분리막에서 결정립 성장이 명백하게 나타났다.

• Applied Microscopy
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• 제22권2호
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• pp.118-126
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• 1992

The pathway and time course of fucose-containing glycoprotein synthesis and intracellular translocation in osteoclasts of the mice maxillary alveolar bone were investigated by electron microscopic radioautography. Male Balb-C mice weighing 17gm were anesthetized with Nembutal and injected via the external jugular vein with 2.5 mCi of $L-[6-^{3}H]-fucose$ (specific activity 16.8 mCi/mmol) in 0.1 ml of sterile saline solution. At 5, 10, 20, 35 minutes and 8 hours after administration of the $^{3}H-fucose$, animals were killed by intracardiac perfusion of 30ml of 2% glutaraldehyde in a modified Tyroid solution, pH 7.4. The maxillae were then removed and further fixed in Karnovsky fixative for an additional 3-4 hours. After rinsing in 0.1M cacodylate buffer for 10 minutes, the maxillae were demineralized for 2 weeks at $4^{\circ}C$ in ethylene diamine tetra acetate containing 2% glutaraldehyde. The first interdental areas were mesiodistally sectioned into slices of 1mm thickness and postfixed in osmium tetroxide. Tissues were then dehydrated and embedded in Poly Bed. To prepare electron microscopic radioautography, the dipping method of Kopriwa (1973) was employed. Thin sections were coated with a crystalline monolayer of ILford $L_4$ photographic emulsion. After exposure for 4 months at $4^{\circ}C$, the sections were developed Kodak Microdol-X and Phenidon (for compact grains), fixed in 30% sodium thiosulfate, stained with uranyl acetate and lead citrate and examined in the electron microscope (JEOL 1200 EX). At 5, 10 and 20 minutes after injection, $^{3}H-fucose$ was concentrated in Golgi cisternae of the osteoblasts. By 35 minutes the labels were observed over small vesicles in the suprannclear area of osteoclasts. At 8 hours, numerous silver grains were located on the ruffled border and cell membrane of osteoclasts. These results indicate that fucose molecules are added in the Golgi apparatus and small vesicles appear to be responsible for translocation of the glycoproteins to the marginal portion of osteoblasts. The glycoproteins are distributed on the osteoclast cell surface and especially over the ruffled border.

• Progress in Superconductivity
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• 제8권2호
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.