• Korean Journal of Materials Research
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• v.16 no.1
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• pp.30-36
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• 2006

A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.208-213
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• 1998

Silicidation of the Co/Ti/Si bilayer system in which Ti is used as epitaxy promoter for $CoSi_2$has recently received much attention. The Co/Ti bilayer on the spacer oxide of gate electrode must be thermally stable at high temperatures for a salicide transistor to be fabricated successfully. In the $SiO_2$substrate was rapid-thermal annealed. The Sheet resistances of the Co/Ti bilayer increased substantially after annealing at $600^{\circ}C$, which is due to the agglomeration of the Co layer to reduce the interface energy between the Co layer and the $SiO_2$substrate. In the bilayer system insulating Ti oxide stoichiometric Ti oxide and silicide were not found after annealing.

• Proceedings of the Korean Magnestics Society Conference
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• 1992.10a
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• pp.88-89
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.10-10
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• 1996

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.812-817
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.94-94
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• 2010

Scanning tunneling microscopy (STM) was used to study the electronic structure of cobalt(II) tetraphenylporphyrin (CoTPP) on the Fe/W(110) substrate. Clover-like conformation of CoTPP was observed and showed bias dependent STM images. The central Co(II) ion of this porphyrin was protruded on the positive biases, but it was depressed on the negative biases. On the positive biases, the phenyl rings of CoTPP appeared to be bright contrary to the invisible pyrrole rings. These results were compared the first-principles calculations using GGA and GGA+U to elucidate the influence of the Fe substrate. GGA+U results agreed well with the experimental results; however, GGA did not. These results show that proper treatment of the on-site Coulomb repulsion of the Fe ions is crucial to describe the electronic structure of this system. By the comparison between the GGA+U calculations on the Fe substrate and the gas phase calculations, it can be noted that chemical potential shift occurred accompanying charge transfer from the Fe ions of the substrate to the pyrrole ligand of the porphyrin.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.2
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• pp.243-248
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• 1986

The impurities in As and Ga sources and the contamination of the GaAs substrate prior to growing of MBE GaAs epitaxial layer have been investigated using RHEED, AES and RGA methods. The as source was contaminated by H2O, CO, CO2 and AsO, and the Ga source was contaminated by H2, H2O, CO and CO2. These contaminants could easily be removed by prebaking the source. On the other hand, GaAs substrate was contaminated principally carbon and oxygen. The oxygen could easily be removed by heating the substrate above 480\ulcorner, and the carbon could also be reduced by sputtering the substrate with 1ke V Ar+. The chemically etched substrate surface prior to growing the layer was rough, but it was made to be smooth and clean by heating it above 530 \ulcorner.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.296-300
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• 1999

Cross-shape structures of spin tunneling junctions were fabricated using DC magnetron sputtering and metal masks. The film structures were $substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al_2O_3/CoFe/NiFe$ and $substrate/Ta/NiFe/CoFe/ Al_2O_3/CoFe/NiFe/FeMn/NiFe$. Fabrication conditions of insulating layer ($Al_2O_3$) and thickness and sputtering power of each film layer were varied, and maximum magnetoresistance ratio of 24.3 % was obtained. Magnetic characteristic variations in the above mentioned two structures and two types of substrates (Corning glass 7059 and Si(111)) were compared. Annealing of the junctions was performed to find out magnetic characteristic variations expected from the device fabrication. Magneoresistance Ratio were observed to maintain as-deposited value up to 150 $^{\circ}C$ annealing and then to drop rapidly after 180 $^{\circ}C$ annealing.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.320-324
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• 1993

The effect of sputtering conditions on magnetic properties of CoCrMo/Cr magnetic thin film was investigated. Substrate temperature were controlled from R. T to $250^{\circ}C$. The thickness changes of Cr underlayer and CoCrMo magnetic layer were in the range of $1000-2500\AA$ and $300-800\AA$, respectively. Grain size was found to be decreased with increasing magnetic layer thickness(from $500\AA$ to $800\AA$). CoCrMo magnetic layer microstructure showed relatively small dependence on Cr underlayer thickness, substrate temperature. Coercivity increased with increasing Cr underlayer, magnetic layer thickness and substrate temperature. CoCrMo/Cr thin film showed a coercivity of 880 Oe in $700\AA$ magnetic layer thickness and $1000\AA$ Cr underalyer thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.