• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.371-377
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.338-344
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• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

• Journal of Power System Engineering
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• v.18 no.6
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• pp.40-44
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• 2014

The purpose of this paper is to investigate polarization characteristics of WC-based alloy coatings in alkaline solution. The coatings were fabricated with WC-CrC-Ni, WC-Co-Cr and WC-Co composite powders by HVOF process. Corrosion tests of coatings and substrate were carried out using potentiostat/galvanostat at solution with pH 8 and pH 13. Corrosion potential(Ecorr) and corrosion current density(Icorr) could be studied from polarization curve, and corrosion behavior was analyzed by SEM and EDS. WC-Co-Cr coating and WC-CrC-Ni coating showed more favorable anti-corrosion characteristics than WC-Co coating and substrate at solution with pH 8 and pH 13.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.55-61
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• 2012

We fabricated a-Si:H thin-film solar cell using the two-dimensional (2D) periodic patterned glass substrate. The use of a 3D periodic texture rather than a randomly texture at surface of TCO can result in higher short circuit current densities ($J_{sc}$). In order to analyze the optical effect of patterning glasses, ray-tracing simulations were performed. Also, p-i-n cells were deposited on patterned glasses as substrate by PECVD. UV-Vis spectroscopy, light I-V measurement were carried out for the optoelectronic characterization. The anti-reflective and light-trapping performance of patterning glass substrate was investigated by a comparison of experimental results with numerical simulations.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.150-154
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• 2016

Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.157-161
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• 2000

In order to investigate the substrate effect on the electrochemical properties of thin-film electrode, $LiCoO_2$ was deposited onto the alumina, chemically etched-Si and flat-Si substrates. After annealing at $800^{\circ}C$ in $O_2$ for 30min, the film deposited on the alumina consisted of large particles with several cracks, whereas the film deposited on the flat-Si substrate was composed of very small and uniform particles. The films deposited on the flat-Si showed improved electrochemical properties such as peak potential divergence and rate-capability, over those deposited on the alumina and chemically etched-Si substrate, which can be attributed to the differences of the particle size surface morphology, and the electrical resistance of the current collector.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.20-21
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.61-61
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 1992.03a
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• pp.100-101
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• 1992

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.170-171
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• 2005