The Spectroscopic Ellipsometry Application to the Diamond Thin Film Growth Using Carbon Monoxide(CO) as a Carbon Source

탄소의 원료로 일산화탄소를 사용한 다이아몬드 박막 성장 관찰에 대한 분광 Ellipsometry의 응용

  • 홍병유 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 1998.05.01

Abstract

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.

Keywords

References

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