• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• Journal of the Korean institute of surface engineering
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• v.34 no.6
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• pp.531-536
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• 2001

Co-22 %Cr alloy films are promising for high-density perpendicular magnetic recording media with their perpendicular anisotropy and large coercivity of 3000 Oe. We observed that a self organized nano structure (SONS) of fine ferromagnetic Co-enriched phase and paramagnetic Cr-enriched phase appears inside the grain of Co-Cr magnetic alloy thin films at the elevated substrate temperature after do-sputtering. The periodic fine Co-enriched phase and Cr-enriched phase is the plate shape of 80 (equation omitted)-wide and 1000 (equation omitted)-long. Cr-enriched phases are located at the center of grains. We prepared 5000 (equation omitted) -thick Co-22 %Cr films on polyimide substrate with varying substrate temperature of $ 30^{\circ}C$, $ 150^{\circ}C$ ,200 $^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. A transmission electron microscope equipped with energy dispersive X-ray analyzer is employed to observe the microstructure of each samples after Co-enri-ched phase are etched selectively. The self organized nano structure of Co-enriched and Cr-enriched lamellar is observed above the substrate temperture of $150^{\circ}C$. No compositional change is observed with substrate temperature. The compositional phase separation in self organized structure becomes clear as the substrate temperature increases. Our results implies that the self organized nano structure in Co-22 %Cr film is ideal for ultra high density recording media by recording selectively on Co-enri-ohed phase.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.995-997
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• 2005

A plastic substrate for flexible display is developed. The gas barrier and optical properties of the substrate is improved through depositing silicon oxide/nitride layer and coating polymer layer on plastic film by sputtering process and wet coating process. Roll to roll processes will guarantee the productivity in the whole production process of the plastic substrate.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.166-170
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• 2001

Dopants implanted in silicon substrate affect the reaction between cobalt and silicon substrate. Phosphorous, unlike boron and arsenic, suppressing the reaction between cobalt and silicon induces CoSi formation during a low temperature thermal treatment instead of CoSi₂formation. The CoSi layer should move to the silicon substrate to fill the vacant volume that is generated in the silicon substrate due to the silicon out-diffusion into the cobalt/CoSi interface. The movement of CoSi at gate sidewall spacer region is suppressed by a cohesion between gate oxide and CoSi layers, resulting in a void formation at the gate sidewall spacer edge.

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.165-171
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• 2002

TiN coating were deposited onto different WC-Co substrates using arc ion plating (AIP) technique. The structure and morphology for the deposited coating were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The adhesion behavior of the deposited TiN coating was investigated with a conventional scratch test. Effects of WC particle size and Co content on the adhesion strength between the deposited TiN coating and substrate were studied. During the scratch test, the value of critical load was dependent of WC particle size and Co content on substrate. As the WC particle size and Co content on substrate decreased, the critical load increased. The highest critical load, approximately 110N, was obtained at WC particle size of 1$\mu\textrm{m}$ and Co content of 10wt.%.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1406-1408
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• 2006

Plastic substrate for flexible TFT LCD is developed. The gas barrier, optical properties and conductivity in the substrate is improved through depositing silicon oxide/nitride layer and ITO layer, coating polymer layer on plastic film by sputtering process and wet coating process. The whole production process of the plastic substrate is guaranteed the productivity by using roll to roll process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.492-495
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• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.113-118
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• 2011

According to the high accuracy of semiconductor equipments, PCB substrate with much thin thickness is required. However, it is very difficult to sustain the PCB substrate without deformation in case of horizontal installation, due to low bending stiffness. In this research, new PCB process equipment with vertical installation has been developed in order to solve the problem of PCB substrate damage during etching process. As the main parts of etching system on PCB substrate, PCB substrate and JIG are analyzed through finite element method and experimental test. Through the analysis results of stress state, we could find the optimal JIG design to make the damage as low as possible.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1241-1248
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• 2011

Three dimensional quantitative structure-activity relationships (3D-QSARs) between new thiosemicarbazone analogues (1-31) as a substrate molecule and their inhibitory activity against tyrosinase as a receptor were performed and discussed quantitatively using CoMFA (comparative molecular field analysis) and CoMSIA (comparative molecular similarity indices analysis) methods. According to the optimized CoMSIA 2 model obtained from the above procedure, inhibitory activities were mainly dependent upon H-bond acceptor favored field (36.5%) of substrate molecules. The optimized CoMSIA 2 model, with the sensitivity of the perturbation and the prediction, produced by a progressive scrambling analysis was not dependent on chance correlation. From molecular docking studies, it is supposed that the inhibitory activation of the substrate molecules against tyrosinase (PDB code: 1WX2) would not take place via uncompetitive inhibition forming a chelate between copper atoms in the active site of tyrosinase and thiosemicarbazone moieties of the substrate molecules, but via competitive inhibition based on H-bonding.