• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.266-269
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• 2000

As the device geometry continuously shrink down less than sub-quarter micrometer, DRAM makers are going to replace conventional tungsten-polycide with tungsten bit-line structure in order to reduce the chip size and use it as a local interconnection. In this paper we showed low resistance and leakage tungsten bit-line process with various RTP(Rapid Thermal Process) temperature. As a result we obtained that major parameters impact on tungsten bit-line process are RTP Anneal temperature and BF2 ion implantation dopant. These tungsten bit-line process are promising to fabricate high density chip technology.

• Proceedings of the Safety Management and Science Conference
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• 2003.11a
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• pp.335-343
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• 2003

In the electrode fabrication of unit cell, it was ascertained that electrochemical characteristics were greatly increased with 90 wt.% of BP-20, 5 wt.% of Super P and 5 wt.% of mixed binder [P(VdF-co-HFP) : PVP =7 : 3] The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. The electrochemical characteristics of 2.3 V/3,000 F grade EDLC were as follows: 0.35 m of DC-ESR (100 A discharge), 0.14 mof AC-ESR (AC amplitude 100 mV), 2.80 Wh/kg (3.73 Wh/L) of energy density and 4.64 kW /kg (6.19 kW/L) of power density. Power output was compatible with electric vehicle applications, uninterrupted power supply and engine starter, in due consideration of Ragone relations.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• Proceedings of the Safety Management and Science Conference
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• 2004.05a
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• pp.247-257
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• 2004

Electrodes were fabricated based on activated carbon powder BP-20, conducting agent such as Super P, vapor grown carbon fiber (VGCF) and acetylene black (AB), and the mixed binders of flexible poly(vinylidenefluoridehexafluoropropylene) [P(VdF-co-HFP)] and cross linking dispersion agent of polyvinylpyrrolidone (PVP) to increase mechanical strength. According to impedance measurement of the electrode with the addition of conducting agent, we found that it was possible to charge rapidly by the fast steady-state current convergence due to low equivalent series resistance (AC-ESR, fast charge transfer rate at interface between electrode and electrolyte and low RC time constant. The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. We found that the 2.3V/230F grade EDLC would be applied to industrial safety usage such as uninterrupted power supply (UPS) because of the constant DC-ESR by IR drop regardless of discharge current.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.288-292
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• 1998

The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2508-2511
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• 1999

A non-contact battery charger which transfers energy using magnetic field without any electrical contacts is designed using half-bridge series resonant converter. This converter utilizes series resonance to reduce the undesirable effect of large leakage inductance of the non-contact transformer and ZVS operation can reduce switching losses. In this paper. analysis and design procedure of half-bridge series resonant converter with non-contact transformer is presented. Input voltage is 85VAC ${\sim}$ 270VAC, output voltage and current is 4.1V and 800mA, respectively. Furthermore, a method for calculating the secondary current of the transformer to control battery charging current in constant current charging mode which is required for litium-ion battery is proposed and the performance is verified from experiments.

• Membrane Journal
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• v.4 no.3
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• pp.163-170
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• 1994

The separation of inorganic salt from amino acid solution using was performed electrodialysis. In order to review the availability of electrodialysis using isoelectric point of amino acid as a bio-separation technique, electrodialysis stacks were designed using ion exchange membrane. Separation of NaCl from amino acid solution was performed in the condition similar to amino acid fermentation process. To obtain otimum conditions of separation, leakage of amino acid depending of pH and limiting current density were measured. On the basis of optimum condition, removal of NaCl and leakage of amino acid were investigated quantitatively in batch and continuous process, and current efficiencies were also obtained. As a result of batch experiment for 11 hours each amino acid solution, removal efficiencies of NaCl were in the ranges of 96.1~96.2%. Amino acid leakage rate of glycine, methionine, alanine were 2.5, 1.7, 2.0% respectively. Current efficiencies were in the ranges of 44.5~44.6%. As a result of continuous experiment in various flow rate of each amino acid solution, it took 120 ~ 150 min to reach to steady state. Removal efficiency of NaCl was increased as the flow rate was decreased, but current efficiency was decreased. At the steady states, there were no leakage of amino acid.

• Journal of the Korea Institute of Building Construction
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• v.14 no.1
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• pp.68-75
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• 2014

In order to increase the integrity of the wellbore which is used to prevent the leakage of supercritical $CO_2$, it is necessary to develop a concrete that is strongly resistant to carbonation. In an environment where the concentration of $CO_2$ is exceptionally high, $Ca^{2+}$ ion concentration in pore solution of Portland cement concrete will drop significantly due to the rapid consumption of calcium hydroxide, which decreases the stability of the calcium silicate hydrate. In this research, calcium phosphates were used to modify Portland cement system in order to produce hydroxyapatite, a hydration product that is strongly resistant to carbonation under such an environment. According to the experimental results, calcium phosphates reacted with Portland cement to form hydroxyapatite. The formation of hydroxyapatite was verified using X-ray diffraction analyses with selective extraction techniques. When using dicalcium phosphate dihydrate and tricalcium phosphate, the 28-day compressive strength was lower than that of plain cement paste. However, the specimen with monocalcium phosphate monohydrate showed equivalent strength to that of plain cement paste.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.