• Journal of the Korean Institute of Intelligent Systems
• /
• v.23 no.2
• /
• pp.107-112
• /
• 2013

In the paper, velocity controller of switching module and temperature controller for the high-voltage static var compensator are proposed. Because of the continuous increase in demand for electric power, transmission and distribution facilities of power plant are required. There is a bottleneck problem of transportation routes according to new construction and expansion of power transmission facilities. Therefore there are researches to maximize the utilization of existing facilities and to increase transmission capacity without new construction. The previous static var compensator detects voltage of input circuit of power, switches the SCR directly and generates switching noise. The proposed method increases switching velocity and decreases noise using switching control based on the voltage between both sides of SCR. Also the proposed method enhance the stability using realtime temperature control for heating of the system from increase of switching velocity. We experiment the velocity and temperature control of the proposed high-voltage static var compensator in the real environment and verify the performance of the proposed system by applying in the real field.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.11 no.1
• /
• pp.114-122
• /
• 1997

This paper describes the design and development of a smart digital load cell used forweighing installations. Sice the load cell sensor to be used is very sensitive for weight cariation, the load cell must have the temperature stability, low-drift and the high-resolution of the A/D conversion for accuracy. A new analog circuit which is controlled by one chip micro-processer has been developed to reduce the offset voltage and the drift characteristics of operational amplifiers, and has been adapted into the digital load cell. Also, a software algorithm has been developed to obtain the stable and accurate A/D conversion. This software includes a RS-485 communication program to control the digital load cell, which gives a capability of backing-up the calibration data and transferring control data. The simulation and evaluation of the designed digital load cell has been shown as having the good performance. which will give useful application to the weighing installations as a remote weighing sensor.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.5
• /
• pp.191-195
• /
• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.12
• /
• pp.1822-1828
• /
• 2004

Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.

• Journal of the Society of Naval Architects of Korea
• /
• v.35 no.4
• /
• pp.65-75
• /
• 1998

The $CO_2$ welding with 100% $CO_2$ gas is commonly used because of its cost and efficiency. Arc phenomena and spattering ratio of the $CO_2$ welding are influenced by various factors such as chemical compositions of welding wire, shielding gas, welding condition and welding power source etc.. Spattering ratio is predominantly influenced by the welding condition which determines a droplet transfer rode. In this study, arc phenomena and spattering ratio are investigated by using two type of FCW(titania type, semi-metal type). Then, the welding quality and optimum welding condition can be selected. From this study, the following results ware obtained; 1) In low current range(140A), FCW up to welding voltage(22V) resulted in a typical short circuit transfer, increase of spattering ratio and growth of spatter diameter. 2) In high current range(320A), the arc stability in titania FCW of a typical globular transfer is better than that of semi-metal FCW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.10 no.7
• /
• pp.1044-1052
• /
• 1999

A 2-stage 1 watt MMIC(Monolithic Microwave Integrated Circuits) HPA(High Power Amplifiers) at 20 GHz band has been designed and fabricated. The $0.15\mu\textrm{m}$ with the width of $400\mu\textrm{m}$for single device pHEMT technology was used for the fabrication of this MMIC HPA. Due to the series feedback technique from source to ground, bias circuits and stabilization circuits on the main microstrip line, the stability factors(Ks) are more than one at full frequency. The independent operation for each stage and excellent S11, S22 less than -20 dB have been obtained by using lange couplers. For beginning the easy design, linear S-parameters have been extracted from the nonlinear equivalent circuit in foundry library, and equivalent circuits of devices at in/output ports were calculated from this S-parameters. The measured performances, which are in well agreement with the predicted ones, showed the MMIC HPA in this paper has the minimum 15 dB of linear gain, -20 dB of reflection coefficients and 31 dBm of output power over 17~25 GHz.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.05a
• /
• pp.41-41
• /
• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• Applied Chemistry for Engineering
• /
• v.32 no.6
• /
• pp.700-705
• /
• 2021

A portable and disposable pH sensor based on Ti wire was successfully developed for monitoring hydronium ion concentrations. A sensing electrode was prepared by electrochemically depositing iridium oxide onto a Ti wire, while a reference electrode was fabricated by coating Ag/AgCl ink on a Ti wire. Combining the two electrodes in the pH sensor enabled the collection of open circuit potential signals when the sensor was immersed in solutions of various pH values. The pH sensor exhibited excellent electrochemical sensing performance in terms of sensitivity, response time, repeatability, selectivity, and stability. To demonstrate point-of-measurement applications, the pH sensor was integrated with a wireless electronic module that could communicate with a mobile application. The portable pH sensor accurately measured pH changes in real samples. The results obtained were consistent with those of using a commercial pH meter.

• Journal of IKEEE
• /
• v.23 no.1
• /
• pp.330-333
• /
• 2019

Various studies on dye-sensitized solar cells, which are cheaper to manufacture and have superior stability than silicon solar cells, are continuously conducted. In this study, the properties of dye-sensitized solar cells were studied using semiconductor oxides made by mixing $TiO_2$ and $Nb_2O_5$. By adding $Nb_2O_5$ in different proportions, the solar cell was made, and the surface area and electrical characteristics of this cell were measured. As $Nb_2O_5$ was added, the contact area of dye and electrolyte increased and the short-circuit current, open voltage, fill factor and conversion efficiency of dye-sensitized solar cells were confirmed to be improved.

• Steel and Composite Structures
• /
• v.38 no.3
• /
• pp.337-353
• /
• 2021

Micro-electro-mechanical systems (MEMS) are widely employed in sensors, biomedical devices, optic sectors, and micro-accelerometers. New reinforcement materials such as carbon nanotubes as well as graphene platelets provide stiffer structures with controllable mechanical specifications by changing the graphene platelet features. This paper deals with buckling analyses of functionally graded graphene platelets micro plates with two piezoelectric layers subjected to external applied voltage. Governing equations are based on Kirchhoff plate theory assumptions beside the modified couple stress theory to incorporate the micro scale influences. A uniform temperature change and external electric field are regarded along the micro plate thickness. Moreover, an external in-plane mechanical load is uniformly distributed along the micro plate edges. The Hamilton's principle is employed to extract the governing equations. The material properties of each composite layer reinforced with graphene platelets of the considered micro plate are evaluated by the Halpin-Tsai micromechanical model. The governing equations are solved by the Navier's approach for the case of simply-supported boundary condition. The effects of the external applied voltage, the material length scale parameter, the thickness of the piezoelectric layers, the side, the length and the weight fraction of the graphene platelets as well as the graphene platelets distribution pattern on the critical buckling temperature change and on the critical buckling in-plane load are investigated. The outcomes illustrate the reduction of the thermal buckling strength independent of the graphene platelets distribution pattern while meanwhile the mechanical buckling strength is promoted. Furthermore, a negative voltage, -50 Volt, strengthens the micro plate stability against the thermal buckling occurrence about 9% while a positive voltage, 50 Volt, decreases the critical buckling load about 9% independent of the graphene platelet distribution pattern.