• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.63-70
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• 2001

We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.

• Journal of IKEEE
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• v.18 no.4
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• pp.544-551
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• 2014

This paper suggests an algorithm to measure low-level radiation by radiation measuring devices, and the other algorithm to improve reaction speed of the device to better respond to dramatic changes in radiation amount. The former algorithm to improve the accuracy of measuring low-level radiation takes advantage of a dual window radiation measurement method which is based on accumulated average of pulses gathered by a radiation measuring sensor. The latter algorithm is to enhance reaction speed of a measuring device to more sensitively react to dramatic changes in radiation amount by adopting a dual window radiation measurement method which analyzes data patterns newly put into for six seconds. To verify the suggested algorithms, a hardware-which consists of sensor and high-voltage generator, controller, charger and power supply circuit, wireless communication part, and display part-was used. Tests conducted on the dual window radiation measurement method as used in the suggested algorithm have proved that accuracy improves to measure low-level radiation of 5uSv/h, and linearity also gets better. Other tests were conducted to see whether the suggested algorithm enhances the reaction speed of a radiation measuring device so that the device responds better to dramatically changing radiation amount. The experimental results have shown meaningful changes in numbers after six seconds. Therefore, the conclusions are made that the algorithm enhances the reaction speed of the device.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1350-1359
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• 2008

This paper presents a wideband doubly balanced resistive mixer fabricated using $0.5{\mu}m$ GaAs p-HEMT process. Three baluns are employed in the mixer. LO and RF baluns operating over an 8 to 20 GHz range were implemented with Marchand baluns. In order to reduce chip size, the Marchand baluns were realized by the meandering multicoupled line and inductor lines were inserted to compensate for the meandering effect. IF balun was implemented through a DC-coupled differential amplifier. The size of IF balun is $0.3{\times}0.5\;mm^2$ and the measured amplitude and phase unbalances were less than 1 dB and $5^{\circ}$, respectively from DC to 7 GHz. The mixer is $1.7{\times}1.8\;mm^2$ in size, has a conversion loss of 5 to 11 dB, and an output third order intercept(OIP3) of +10 to +15 dBm at 16 dBm LO power for the operating bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.921-932
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• 2010

This paper presents a dual-band array antenna based on a modified Sierpinski fractal structure. Array structure is mirror symmetric, and forms broadside radiation pattern for dual frequency band if the ports are fed with $180^{\circ}C$ phase difference between upper and lower $2{\times}1$ array. To use in-phase corporate feeding circuit, the phase inversion structure is designed by changing the position of patch and ground for upper and lower array. The dimensions of the array antenna is $28{\times}30{\times}5\;cm^3$ and the bandwidth of 855~1,380 MHz(47 %), 1,770~2,330 MHz(27 %) were achieved for -10 dB return loss. The measured gain is 9.06~12.44 dBi for the first band and 11.76~14.84 dBi for the second band. The half power beam width is $57^{\circ}$ for x-z plane and $46^{\circ}$ for y-z plane at 1,100 MHz and $43^{\circ}$ and $28^{\circ}$ at 2,050 MHz, respectively.

• Composites Research
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• v.13 no.5
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• pp.50-59
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• 2000

In this paper, two methods to suppress flutter of the composite panel are examined. First, in the active control method, a controller based on the linear optimal control theory is designed and control input voltage is applied on the actuators and a PZT is used as actuator. Second, a new technique, passive suppression scheme, is suggested for suppression of the nonlinear panel flutter. In the passive suppression scheme, a shunt circuit which consists of inductor-resistor is used to increase damping of the system and as a result the flutter can be attenuated. A passive damping technology, which is believed to be more robust suppression system in practical operation, requires very little or no electrical power and additional apparatuses such as sensor system and controller are not needed. To achieve the great actuating force/damping effect, the optimal shape and location of the actuators are determined by using genetic algorithms. The governing equations are derived by using extended Hamilton's principle. They are based on the nonlinear von Karman strain-displacement relationship for the panel structure and quasi-steady first-order piston theory for the supersonic airflow. The discretized finite element equations are obtained by using 4-node conforming plate element. A modal reduction is performed to the finite element equations in order to suppress the panel flutter effectively and nonlinear-coupled modal equations are obtained. Numerical suppression results, which are based on the reduced nonlinear modal equations, are presented in time domain by using Newmark nonlinear time integration method.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.274-274
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• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.

• Restorative Dentistry and Endodontics
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• v.25 no.4
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• pp.527-535
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• 2000

The purpose of this study was to evaluate effects of smear layer and dentin primers on the sealing ability of root canals. 126 extracted human teeth with single, straight canals and mature apices were used. The Samples were first classified into six groups as follows: presence of smear layer; absence of smear layer; Scotchbond Bond Multi-Purpose; All Bond 2; Mac Bond 2; Clearfil Liner Bond 2. A Positive control was also established. All teeth except the control group were then obturated with thermoplasticized gutta-percha and AH26. Electrochemical and dye penetration technique were later used to evaluate the degree of micro leakage through the root canal. Seventy teeth were then immersed in a 1% potassium chloride solution and An external power supply(DC 10 V) was then applied to the circuit for the electrochemical microleakage test. The degree of Microleakage was determined over period of 28 days before being evaluated. In total, 48 teeth were submitted to the dye infiltration technique. All specimen were suspended in 2% methylene blue dye for 1 week before being longitudinally split. The degree of dye infiltration was measured under a stereo microscope at ${\times}10$ magnification and evaluated. The results were as follows: 1. Apical microleakage increased throughout the test period in all group and one group having a smear layer showed a dramatic increase under electrochemical test (p<0.05). In the group having smear layer, the degree of apical microleakage was the highest, and the micro leakage was much higher than in the smear layer removed group in electrochemical test (p<0.05). Scotchbond Multi-Purpose, All Bond 2, Mac Bond 2 and Clearfil Liner Bond 2 showed lower micro leakage than one group having smear layer. The All Bond 2 and Clearfil Liner Bond 2 treated groups showed the lowest microleakage in electrochemical test (p<0.05). 2. There was no significant difference between the experimental groups in dye penetration technique. These results suggested that the removal of the smear layer from root canal and concomitantly the application of dentin primer into root canal could improve the sealing ability of root canal obturation.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.1
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• pp.54-62
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• 2013

In this study, a wireless and non-power SAW (surface acoustic wave) temperature sensor was developed. The single inter-digital transducer (IDT) of SAW temperature sensor of which resonance frequency is 434 MHz was fabricated on $128^{\circ}$ rot-X $LiNbO_3$ piezoelectric substrate by semiconductor processing technology. To find optimal acoustic reflector for SAW temperature sensor, various kinds of acoustic reflectors were fabricated and their reflection characteristics were analyzed. The IDT type acoustic reflector showed better reflection characteristic than other reflectors. The wireless temperature sensing system consisting of SAW temperature sensor with dipole antenna and a microprocessor based control circuit with dipole antenna for transmitting signal to activate the SAW temperature sensor and receiving the signal from SAW temperature sensor was developed. The result with wireless SAW temperature sensing system showed that the frequency of SAW temperature sensor was linearly decreased with the increase of temperature in the range of 40 to $80^{\circ}C$ and the developed wireless SAW temperature sensing system showed the excellent performance with the coefficient of determination of 0.99.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.8
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• pp.5541-5549
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• 2015

This paper introduces a safer and more power efficient heater by using induction heating, to apply to the semiconductor wafer fabrication exhaust gas cleaning system. The exhaust gas cleaning system is currently made with filament heater that generates an endothermic reaction of N2 gas for the removal of moisture. Induction theory, through the bases of theoretical optimization and electronic implementation, is applied in the design of the induction heater specifically for the semiconductor wafer exhaust system. The new induction heating design provides a solution to the issues with the current energy inefficient, unreliable, and unsafe design. A robust and calibrated design of the induction heater is used to optimize the energy consumption. Optimization is based on the calibrated ZVS induction circuit design specified by the resonant frequency of the exhaust pipe. The fail-safe energy limiter embedded in the system uses a voltage regulator through the feedback of the MOSFET control, which allows the system performance to operate within the specification of the N2 Heater unit. A specification and performance comparison from current conventional filament heater is made with the calibrated induction heater design for numerical analysis and the proof of a better design.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.