• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.7
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• pp.376-383
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• 1999

The piezoelectric transformer (PT) is an electro-mechanical device that transfers electrical energy through a mechanical vibration. In this paper, a PT operating in the contour vibration mode is introduced for an application of fluorescent lamp ballast. Utilizing its inherent characteristics of the LC resonator and a high voltage gain to ignite the lamp in light load condition, an investigation of a power piezoelectric transformer as a potential component for a fluorescent lamp ballast is discussed. PT is easy to be produced in mass and reduces the cost of the ballast. The modified equivalent circuit model of the PT considering the operating current level is derived to design the fluorescent lamp ballast. This model describes the voltage gain of the PT in wide load variations and various input current levels. The experimental and simulation results are provided to verify theoretical analysis. The power capacity of the currently developed PT is relatively low (15W), but it can be increased by adopting a multi-layer structure and is currently under investigation. It is also possible to parallel the PT for higher power processing.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.10
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• pp.1175-1180
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• 2014

In this paper, the open ring type DGS(Defected Ground Structure) resonator, applicable to MMIC(Monolithic Microwave Integrated Circuit), is proposed to improve phase noise characteristics of RF oscillator. This resonator is planar type, therefore, it easy to design miniaturrized., and takes relatively high Q value. Modeling the equivalent parameter of resonator is needed, when designing the RF oscillator with resonator. The mathematical method to solve the equivalent parameter of the resonator from the measured results of resonator is introduced in this paper. To verify the method, DGS resonator with 5.8 GHz center frequency is fabricated, for measuring characteristics and calculating the equivalent parameter. The result from this process is compared with the data of the ADS simulation, and as a result both were identical.

• Journal of the korean Society of Automotive Engineers
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• v.13 no.4
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• pp.62-75
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• 1991

The purpose of this study is to perform modelings and experiments to measure air flow rate using hot-wires and a CTA(Constant Temperature Anemometer). The flow rate can be obtained by measuring the heat loss of the hot-wire due to the variations of flow velocity when the hot-wire is maintained at uniform temperature. But the defect of this method is that the output signal changes not only by the flow rate but also by the ambient temperature. Thus, in the present study, a method which compensates the variations of the ambient temperature has been introduced to measure exact flow rate. To be more specific, the bridge circuit of the usual hot-wire anemometer system has been modified in such a way that a temperature resistance sensor and a variable resistance are placed in one of the legs to compensate the different temperature coefficients of both the hot-wire and the temperature compensating resistance for flow velocity or for flow mass up to the flow temperature of 50 .deg.C. Comparing the modeling and experimental results, it has been shown that the compensating point differs as the flow rate varies. Therefore, optimum compensation points are sought to construct the circuit. The present modeling and experimental results may be applied to the design of actual air flow meters for automobiles.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.12
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• pp.964-973
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• 2017

In this paper, we analyze the effects of parasitic components of common-mode choke on the common mode and differential mode in a wide band, and we propose a simple method for high-frequency modeling. Common mode and differential mode 2-port networks were configured and the S-parameters in each mode were measured using a network analyzer. Equivalent circuit elements were extracted from the measured results to model a high-frequency equivalent circuit, and the validity was verified by comparing the measured S-parameters with the simulation results.

• Proceedings of the KIEE Conference
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• 1999.07c
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• pp.1180-1182
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• 1999

Modeling for utility interactive photovoltaic power generation system has been studied using PSCAD/EMTDC. The proposed model system consists of a simple utility circuit configuration, 3kW of single phase utility interactive photovoltaic system, single phase PWM voltage source inverter module, and feed forward PID controller as control circuit. In the system, the DC current is assumed constant, and the voltage source inverter provides sinusoidal ac current for the loads of utility system. The simulation results are given in order to verify the effectiveness of the proposed model. The phases of output voltage of utility system and the output current of the inverter module are compared. Especially, the compensation effect of the photovoltaic system for the unbalanced load is analyzed. and the transient phenomena for a phase to ground fault are also simulated.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.11-16
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• 2017

The frequency dependent input resistance observed in RF MOSFETs is analyzed in detail by deriving pole and zero frequency equations from a simplified input equivalent circuit. Using this theoretical analysis, we find that the reduction effect of the input resistance in the low frequency region arises from the channel resistance between source and pinch-off region in the saturation region. This channel resistance effect on the low frequency reduction of the input resistance is physically validated by performing small-signal equivalent circuit modeling with varying the channel resistance.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1308-1316
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• 1989

A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

• Journal of IKEEE
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• v.4 no.2 s.7
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• pp.202-211
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• 2000

Utilizing the circuit simulator SPICE, we designed a 1.9GHz CMOS up-conversion mixer and explained in detail the simulation procedures including device modeling for the circuit design. Since the measured characteristics of the chip fabricated using the $0.5{\mu}m$ standard CMOS process had shown a big deviation from the characteristics expected by the original simulations, we tried to figure out the proper reasons for the discrepancies. Simulations considering the discovered problems in the original simulations have shown the validity of the simulation method tried for the design. We have shown that the utilized standard CMOS process can be used for the implementation of the chip characteristics similar to those of the equivalent chip fabricated using the GaAs MESFET process.

• Korean Journal of Optics and Photonics
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• v.22 no.1
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• pp.35-39
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• 2011

The PSPICE equivalent circuit elements of a 1550 nm InGaAsP laser diode were derived by using multi-level rate equations. The device parameters were extracted by using a self-consistent numerical method for the optical gain properties of the MQW active regions. The resulting equivalent circuit model is also applied to an actual optical transmitter, and its PSPICE simulation results show good agreement with the measured results once the parasitic capacitance due to the packaging is taken into account.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.149-153
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• 2011

The PC1D is widely used for modeling the properties of crystalline silicon solar cell. Optimized doping profile in crystalline silicon solar cell fabrication is necessary to obtain high conversion efficiency. Doping profile in the forms of a uniform, gaussian, exponential and erfc function can be simulated using the PC1D program. In this paper, the doping profiles including junction depth, dopant concentration on surface and the form of doping profile (gaussian, gaussian+erfc function) were changed to study its effect on electrical properties of solar cell. As decreasing junction depth and doping concentration on surface, electrical properties of solar cell were improved. The characteristics for the solar cells with doping profile using the combination of gaussian and erfc function showed better open-circuit voltage, short-circuit current and conversion efficiency.