• 제목/요약/키워드: chuck

검색결과 330건 처리시간 0.025초

나노유체를 이용한 히트파이프 핫척의 열적 특성 (Thermal characteristics of Nanofluidic Heatpipe Hot Chuck)

  • 임택규;이석호;김대현;이충구
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회B
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    • pp.2110-2115
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    • 2008
  • In this study, We disigned and manufactured the Hot Chuck which can be operated until $120^{\circ}C$. Its shape is circular, wide is 300mm and depth is 15mm. Two types working fluid was used as working fluid(distilled water, 0.1%-$TiO_2$ nanofluid). The experimental results were compared to each working fluid. The effect of various working fluid, charging volume ratio was investigated. Also we investigated heat transfer rate against each working fluid. By using nanofluid, heat transfer rate can be enhanced and the wick structure can be constructed automatically on smooth surface. The experiment of 40% charged 0.1%-$TiO_2$ nanofluid showed the best performance of thermal accuracy and uniformity. To improve performance of Hot Chuck, more study is needed.

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크랭크 레버형 평행개폐 공기압 척의 수명 분석 (Life Analysis of Parallel Opening Type Pneumatic Chuck)

  • 강보식;송창섭;장지성;지상원
    • 한국정밀공학회지
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    • 제26권9호
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    • pp.96-102
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    • 2009
  • In this study, performs analysis of the life of parallel opening type pneumatic chucks that are usually applied in the factory automation line. Pneumatic chucks have complicated failure cause because they are organized as a complex of various elements. Therefore, we analyzed the main failure mode of pneumatic chuck, and then performed life test and performance test according to the international standards. On the basis of these processes, shape parameter of pneumatic chuk is proposed that is the main factor for the calculation of zero failure test time for the reliability of pneumatic chuck and their data analysis of life distribution.

GaN epitaxy 층의 식각특성에 미치는 공정변수의 영향 (Parametric study of inductively coupled plasma etching of GaN epitaxy layer)

  • 최병수;박해리;조현
    • 한국결정성장학회지
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    • 제26권4호
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    • pp.145-149
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    • 2016
  • 플라즈마 조성, ICP source power, rf chuck power 등의 공정변수가 GaN epitaxy층의 식각특성에 미치는 영향을 조사하였다. $GaF_x$ 화합물 보다 더 높은 휘발성을 가지는 $GaCl_x$ 식각 생성물 형성이 가능한 $Cl_2/Ar$ 플라즈마가 $SF_6/Ar$ 플라즈마보다 더 높은 식각속도를 나타내었다. 또한, $Cl_2/Ar$ 플라즈마에서 Ar 비중이 증가함에 따라 물리적 식각 기구 활성화로 인해 식각 이방성이 향상됨을 확인하였다. 두 가지 플라즈마 조성 모두에서 ICP source power와 rf chuck power가 증가함에 따라 식각속도가 지속적으로 증가함을 확인하였고, $13Cl_2/2Ar$, 750W ICP power, 400 W rf chuck power, 10 mTorr 조건에서 최고 251.9 nm/min의 식각속도를 확보하였다.

초음파 분석을 이용한 촌관척 위치별 혈관의 특성연구 (Characteristic Study of the Pulse Position on CHON, KWAN and CHUCK Using the Ultrasonic Waves)

  • 이유정;이전;이혜정;유현희;최은지;김종열
    • 한국한의학연구원논문집
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    • 제13권3호
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    • pp.111-117
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    • 2007
  • The study aims to measure and analyze the thickness and depth of blood vessel on the pulse diagnosis locations and the blood velocity through the use of ultrasonic waves (LOGIQ5PRO, GE Medical, U.S.) in order to understand the structural difference of pulse diagnosis locations. The subjects included 44 healthy men and women(22.28${\pm}$2.62 age) considered normal in terms of Body Mass Index(BMI). The thickness and depth of the blood vessel and the blood velocity were measured three times on CHON, KWAN and CHUCK to obtain the average value. Results showed there is a statistically significant difference among the variables measured on CHON, KWAN and CHUCK. A difference according to gender was also observed. This explains why an oriental medical doctor can tell the difference in pulses depending on the location of CHON, KWAN and CHUCK. In addition, the difference in pressure between CHON and KWAN was higher than that in pressure between KWAN and CHUCK. The findings explain why oriental medical doctors take pulses by dividing CHON, KWAN and CHUCK in the short length of the three fingers. It can be used to develop a pulse diagnosis device enabling accurate measurement according to the characteristics of blood vessel structure based on where the pulse is taken. Furthermore, the results can be used as basic data for the development of a pulse diagnosis simulator.

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Adsorption Property of Silicone Rubber Sticking Chuck for OLED Glass Substrate

  • Kim, Jin-Hee;Chung, Kyung-Ho
    • Elastomers and Composites
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    • 제50권1호
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    • pp.55-61
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    • 2015
  • Manufacturing process of OLED contains adsorption-desorption process of glass substrate. There are several adsorption methods of glass substrate such as atmospheric pressure, vacuum and electrostatic adsorption. However, these methods are very complex to connect system. Therefore, the adsorption method using silicone rubber based sticking chuck was proposed in this study. Three types of silicone rubbers having 0, 19.3 and 32.2 wt% of fluorine were used and their mechanical properties, surface energies and adsorption properties were examined. According to the results ${\sigma}_{300}$ and hardness increased with increasing fluorine contents, but elongation was decreased. Also, fluorosilicone rubber containing 32.2 wt% of fluorine showed the lowest surface tension, among three types of rubber and resulted in the highest initial tack with glass substrate. After the adsorption-desorption test of 300,000 cycles was performed, the adsorption force of S-1 (silicone rubber) decreased largely from 2.34 to 0.73 MPa. However, the S-3 (fluorosilicone rubber having 32.2 wt%. of fluorine) decreased only from 3.15 to 2.24 MPa. From this study, we obtained the valuable equations related to long term durability of silicone based sticking chuck. Finally the transfer of silicone rubber to glass substrate with the adsorption-desorption process was not occurred and this phenomenon was examined by UV-Visible spectroscopy.

초정밀 플립칩 접합기용 고성능 가열기의 열적 설계 및 시험 (Thermal Design and Experimental Test of a High-Performance Hot Chuck for a Ultra Precision Flip-Chip Bonder)

  • 이상현;박상희;류도현;한창수;곽호상
    • 대한기계학회논문집B
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    • 제30권10호
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    • pp.957-965
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    • 2006
  • A high-performance hot chuck is designed as a heating device for an ultra-precision flip-chip bonder with infrared alignment system. Analysis of design requirements for thermal performance leads to a radiative heating mechanism employing two halogen lamps as heating source. The heating tool is made of silicon carbide characterized by high thermal diffusivity and small thermal expansion coefficient. Experimental tests are performed to assess heat-up performance and temperature uniformity of the heating tool. It is revealed that the initial design of hot chuck results in a good heat-up speed but there exist a couple of troubles associated with control and integrity of the device. As a means to resolve the raised issues, a revised version of heating tool is proposed, which consists of a working plate made of silicon carbide and a supporting structure made of stainless steel. The advantages of this two-body heating tool are discussed and the improved features are verified experimentally.

화합물 반도체 본딩용 Spin Coater Module의 동특성 평가 (Dynamic Characteristic Evaluation of Spin Coater Module for GaAs Wafer Bonding)

  • 송준엽;김옥구;강재훈
    • 한국정밀공학회지
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    • 제22권6호
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    • pp.144-151
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    • 2005
  • Spin coater is regarded as a major module rotating at high speed to be used build up polymer resin thin film layer fur bonding process of GaAs wafer. This module is consisted of spin unit for spreading uniformly, align device, resin spreading nozzle and et. al. Specially, spin unit which is a component of module can cause to vibrate and finally affect to the uniformity of polymer resin film layer. For the stability prediction of rotation velocity and uniformity of polymer resin film layer, it is very important to understand the dynamic characteristics of assembled spin coater module and the dynamic response mode resulted from rotation behavior of spin chuck. In this paper, stress concentration mode and the deformed shape of spin chuck generated due to angular acceleration process are presented using analytical method for evaluation of structural safety according to the revolution speed variation of spin unit. And also, deformation form of GaAs wafer due to dynamic behavior of spin chuck is presented fur the comparison of former simulated results.

공정변수에 따른 microwave plasma CVD 다이아몬드/Ti 박막 증착 양상 조사 (Parametric study of diamond/Ti thin film deposition in microwave plasma CVD)

  • 조현;김진곤
    • 한국결정성장학회지
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    • 제15권1호
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    • pp.10-15
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    • 2005
  • Microwave plasma CVD 다이아몬드/Ti 박막 성장 시 CH₄/H₂ 가스의 유량비율, chuck bias, microwave power 등이 다이아몬드 박막의 구조적 특성과 입자밀도에 미치는 영향에 대하여 조사하였다. 2∼3 CH₄ Vol.% 조건일 때 sp³-결합성의 탄소 neutral 들이 우선적으로 형성되고 sp²-결합성의 탄소 neutral 들이 선택적으로 제거됨에 따라 양질의 다이아몬드 박막을 얻을 수 있었으며, 다이아몬드 입자 증착 기구를 해석하였다. Ti 기판에 걸어준 negative chuck bias가 증가함에 따라 다이아몬드 핵생성이 증진되어 다이아몬드 입자 밀도가 증가하였고, 임계 전압은 약 -50V 임을 확인하였다. 또한, microwave power가 증가함에 따라 미세결정질(micro-crystalline) graphite 층 생성이 제어되고 다이아몬드 층이 형성됨을 확인하였다.

조선시대(朝鮮時代) 중기(中期)의 포백척(布帛尺)에 관한 연구(硏究) - 조선왕조실록(朝鮮王朝實錄)을 중심으로 - (A Study on Pobeckchuck in the Middle period of Chosun Dynasty(Second) - Focusing on the History of Chosun Dynasty)

  • 이은경
    • 한국생활과학회지
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    • 제16권3호
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    • pp.623-630
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    • 2007
  • The remarkable fact regarding the History of Chosun Dynasty(from Jungjong- Youngjo) is that any slightest evidence can't be found that Pobeckchuck was used to measure clothes or various Pobecks. There remains the document that in the 22nd years of Myeonjong, Japan required that Pobeckchuck be used, but it couldn't be allowed because of the reason it was made in the former king. This fact raises the high possibility that Pobeckchuck could be the most trustworthy standardized ruler at that time, and in other point of view, it can be presumed that the measurement in the period of King Sejong continued to have been used until this time. It can be seen that the length of one Chuck of Pobeckchuck at this time must have been equivalent to 46. 73cm of Pobeckchuck of Samchuck in the period of Sejong. In the History of Sunjo Period, many records on Pobeckchuck can be found, which fact seemed to have rectified the measurement system which was disordered by military revolt, though the reason is not clear. Also a record can be found that in the period of Sunjo, Chinese envoy required the Sunjo Regime to use Pobeckchuck for the measurement of copper pillar, which record supports the fact that Pobeckchuck is the standardized ruler. Another record that in the 26th period of Youngjo, Pobeckchuck of Samchuck was corrected according to the Kyeongkukdaejeon shows that the length of Pobeckchuck was 46.80cm at that time. Also, the record which rectified many rulers with the comparison of Hwangjong-chuck, Ju-chuck, Joryeki-chuck, Yongjo-chuck, etc. with one another reveals that the rulers used in the period of Sejong continued to have been used unchanged until in the period of Youngjo.

BCl3및 BCl3/Ar 고밀도 유도결합 플라즈마를 이용한 GaAs와 AlGaS 반도체 소자의 건식식각 (Dry Etching of GaAs and AlGaAs Semiconductor Materials in High Density BCl3and BCl3/Ar Inductively Coupled Plasmas)

  • 임완태;백인규;이제원;조관식;전민현
    • 한국재료학회지
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    • 제13권10호
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    • pp.635-639
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    • 2003
  • We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.