• 한국작물학회:학술대회논문집
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• 한국작물학회 2021년도 춘계학술대회
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• pp.105-105
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• 2021

• IEIE Transactions on Smart Processing and Computing
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• 제5권2호
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• pp.71-76
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• 2016

A controller area network (CAN) receiver measures differential voltage on a bus to determine the bus level. Since 3.3V transceivers generate the same differential voltage as 5V transceivers (usually ${\geq}1.5V$), all transceivers on the bus (regardless of supply voltage) can decipher the message. In fact, the other transceivers cannot even determine or show that there is anything different about the differential voltage levels. A new CMOS RC oscillator insensitive supply voltage for clock generation in a CAN transceiver was fabricated and tested to compensate for this drawback in CAN communication. The system consists of a symmetrical circuit for voltage and current switches, two capacitors, two comparators, and an RS flip-flop. The operational principle is similar to a bistable multivibrator but the oscillation frequency can also be controlled via a bias current and reference voltage. The chip test experimental results show that oscillation frequency and power dissipation are 500 kHz and 5.48 mW, respectively at a supply voltage of 3.3 V. The chip, chip area is $0.021mm^2$, is fabricated with $0.18{\mu}m$ CMOS technology from SK hynix.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.483-485
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• 2010

Rail-to-rail 입력 범위를 가지는 200kS/s 10-bit successive approximation (SA) ADC가 제안된다. 제안된 SA ADC는 DAC, 비교기, 그리고 successive approximation register (SAR) logic으로 구성된다. DAC는 전력소모를 줄이고 면적을 줄이기 위해 capacitor를 이용한 folded-type으로 구현되며, parasitic 성분에 의한 영향을 줄이기 위해 boosted NMOS switch를 사용한다. 또한 fully differential voltage-to-time converter를 이용하는 time-domain comparator를 제안한다. 이는 PSRR 및 CMRR을 향상시킨다. 또한 출력의 유효구간을 반으로 줄인 flip-flop을 사용함으로 SAR logic의 전력소모와 chip area를 줄인다. 제안된 SA ADC는 1V supply를 가지는 $0.18{\mu}m$ CMOS 공정을 사용한다.

• Journal of information and communication convergence engineering
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• 제6권2호
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• pp.122-128
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• 2008

Multiprocessor architectures and platforms, such as, a multiprocessor system on chip (MPSoC) recently introduced to extend the applicability of the Moore's law, depend upon concurrency and synchronization in both software and hardware to enhance design productivity and system performance. With the rapidly approaching billion transistors era, some of the main problem in deep sub-micron technologies characterized by gate lengths in the range of 60-90 nm will arise from non scalable wire delays, errors in signal integrity and non-synchronized communication. These problems may be addressed by the use of Network on Chip (NOC) architecture for future System-on-Chip (SoC). We have modeled a concurrent architecture for a customizable and scalable NOC in a system level modeling environment using MLDesigner (from MLD Inc.). Varying network loads under various traffic scenarios were applied to obtain realistic performance metrics. We provide the simulation results for latency as a function of the buffer size. We have abstracted the area results for NOC components from its FPGA implementation. Modeled NOC architecture supports three different levels of quality-of-service (QoS).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.32-35
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• 2002

The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.195-202
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• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• 한국지능시스템학회논문지
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• 제10권3호
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• pp.270-279
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• 2000

본 논문은 확률 펄스연산을 이용한 신경회로망이 on-Chip학습 알고리즘에 대해 기술하였다. 확률 펄스 연산은 임이의 펄스열에서 1과 0이 발생할 확률을 통해 표현된 수를 사용하여 계산하는 것을 일컫는다. 이러한 확률연산을 신경회로망에 적용하면 하드웨어 구현먼적을 줄일 수 있다는 것과 확률적인 특징으로 인해 지역 최소값으로부터 빠져 나와 광역 최적해에 도달할 수 있다는 장점을 갖고 있다. 또한 본 연구에서는 칩 냅에 학습할 수 있는 on-chip학습 알고리즘을 역전파 학습 알고리즘으로부터 유도하였다. 이렇게 유도된 알고리즘을 검증하기 위하여 비선형 패턴분리문제를 모의실험 하였다. 도한 활자체 및 필기체 숫자 인식에도 적용하여 좋은 결과를 얻었다.

• 대한전자공학회논문지
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• 제24권6호
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• pp.1056-1067
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• 1987

This paper presents a design procedure for building block integrated circuits that is based on the digraph relaxation model. A set of optimization procedure is prosented for a minimum area and routing-fecsible placement of IC building blocks. Chip area optimization is subject to perimeter and area constraints on the component rectangles in the dissection.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.399-402
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• 2004

This paper presents a system-on-chip prototype implementing a full integration for a portable digital audio system. The chip is composed of a audio processor block to implements audio decoding and voice compression or decompression software, a system control block including 8-bit MCU core and Memory Management Unit (MMU) a low power 16-bit ${\Sigma}{\Delta}$ CODEC, two DC-to-BC converter, and a flash memory controller. In order to support other audio algorithms except Mask ROM type's fixed codes, a novel 16-bit fixed-point DSP core with the program-download architecture is proposed. Funker, an efficient power management technique such as task-based clock management is implemented to reduce power consumption for portable application. The proposed chip has been fabricated with a 4 metal 0.25um CMOS technology and the chip area is about 7.1 mm ${\times}$ 7.1mm with 100mW power dissipation at 2.5V power supply.

• 전자공학회논문지C
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• 제34C권4호
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• pp.1-15
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• 1997

This paper proposes CMOS on-chip voltage and current reference circuits that operate at supply voltages between 2.5V and 5.5V without using a vonventional bandgap voltage structure. The proposed reference circuits based on enhancement-type MOS transistors show low cost, compatibility with other on-chip MOS circuits, low-power consumption, and small-chip size. The prototype was implemented in a 0.6 um n-well single-poly double-metal CMOS process and occupies an active die area of $710 um \times 190 um$. The proposed voltage reference realizes a mean value of 0.97 V with a standard deviation of $\pm0.39 mV$, and a temperature coefficient of $8.2 ppm/^{\circ}C$ over an extended temeprature range from TEX>$-25^{\circ}C$ to $75^{\circ}C$. A measured PSRR (power supply rejection ratio) is about -67 dB at 50kHz.