• Transactions of the Society of Information Storage Systems
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• v.7 no.2
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• pp.60-64
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• 2011

Chemical mechanical planarization is one of the core processes in fabrication of semiconductors, which are increasingly used for information storage devices like solid state drives. For higher data capacity in storage devices, CMP process is required to show ultimate precision and accuracy. In this work, 2-dimensional finite element models were developed to investigate the effects of the slurry particle impact on microscratch generation and the phenomena generated at pad-particle-wafer contact interface. The results revealed that no plastic deformation and corresponding material removal could be generated by simple impact of slurry particles under real CMP conditions. From the results of finite element simulations, it could be concluded that the pad-particle mixture formed in CMP process would be one of major factors leading to microscratch generation.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.711-714
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• 2004

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.21.1-21.1
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.20.1-20.1
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.549-554
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• 2006

In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.378-381
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• 2003

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.