• Title/Summary/Keyword: chemical leakage and skin contact

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Investigation of the Occurrence of Industrial Accidents and Accidental Deaths by Chemical Leakage and Skin Contact (화학물질의 누출과 피부접촉에 의한 재해자 및 사고사망자 발생현황 조사)

  • Lee, Kwon Seob;Choi, Hyun Sung;Lee, Ha Young;Shin, Kyung Min;Choi, Heung Koo;Lee, In Seop
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.30 no.1
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    • pp.39-49
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    • 2020
  • Objectives: We investigated the status of accidents and deaths caused by chemical leakage and skin contact in Korea. The purpose of this study was to produce and provide technical reference data for the efficient management of accidents and the rational management of accidental chemicals. Methods: Accidents and deaths caused by chemical leakage and skin contact in industry were investigated. Based on 68 accident reports related to chemical leakage and skin contact, the causes of accidental deaths were analyzed. In addition, we investigated the chemical substances and articles that caused these accidents and deaths. Based on the results of the investigation, the causes of accidents caused by chemical leakage and skin contact were identified and practical management measures for the chemicals were suggested. Results and Conclusions: In 2018, 372 people suffered from chemical leaks and skin contact, up by 123 (about 49.4%) from the previous year. The number of accident deaths was 14, an increase of five (about 55.6%) from the previous year. In the last three years (2016-2018), 91 chemical substances and article groups were involved in accidents caused by chemical leakage and skin contact. There were 16 chemical substance and article groups involved in accidental deaths. There were ten cases of accidents involving two or more casualties due to chemical leakage and skin contact, and 23 deaths occurred. Most of these accidental deaths were caused by subcontractor workers outsourcing risks. Therefore, there is an apparent need to strengthen the responsibility for safety and health among subcontractors.

Analysis of Internal Flow and Control Speed for NH3 (Ammonia) Leakage Scenario of ALD Facility (ALD 설비의 NH3(Ammonia)누출 시나리오에 대한 내부유동 및 제어 속도 해석)

  • Lee, Seoung-Sam;An, Hyeong-hwan
    • Journal of the Korean Institute of Gas
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    • v.26 no.5
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    • pp.22-27
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    • 2022
  • Atomic Layer Deposition (ALD) is a facility that deposits an atomic layer on a wafer by causing a chemical reaction after decomposition using heat or plasma by inputting two or more gases during the semiconductor process. The main gas used at this time is NH3 (Ammonia). NH3 has a relatively narrow explosive range with an upper limit (UFL) of 33.6% and a lower limit (LEL) of 15%, but it can explode if a large amount suddenly gathers in one place. It is Velocity and fatal if inhaled or in contact with the skin. NH3 (Ammonia) of ALD (Atomic Layer Deposition) facility is supplied to the chamber through the gas inlet and discharged after the reaction.