• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.139-139
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• 2012

With angle resolved photoemission spectroscopy (ARPES), the surface electronic band structures of Pt3Co (111) and Pt3Ni (111) single crystals are investigated, which allow to study the bonding interaction between chemically absorbed atomic oxygen and its surfaces. The d-band electrons of subsurface TM are separated from the direct chemical bonding with atomic oxygen. That is, the TM does not contribute to direct chemical bonding with oxygen. From the density functional theory (DFT) calculations, it is identified that the main origin of improved oxygen absorption property, i.e. softening of Pt-O bonding, is due to the suppression of Pt surface-states which is generated from change of interlayer potential, i.e. charge polarization, between Pt-top and TM-subsurface. Our results point out the critical roles of subsurface TM in modifying surface electronic structures, which in turn can be utilized to tune surface chemical properties.

• 대한화학회지
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• 제54권3호
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• pp.275-282
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• 2010

분자 내 수소결합 가능성을 가지고 있는 2-fluorocyclopropanemethanol과 2-chlorocyclopropanemethanol에 대하여 MP2/6-311++G(d,p) 방법과 B3LYP/6-311++G(d,p) 방법으로 최적화 계산을 수행하였다. 두 분자 모두 가장 안정한 conformer에서 O-H의 수소가 F나 Cl을 향하고 있어 수소결합 가능성을 보이기는 하나 $H{\cdots}F$, $H{\cdots}Cl$ 거리가 van der Waals radii보다 커서 강한 수소결합이라 보기 힘들고 두 번째 안정한 conformer의 경우가 가까운 $H{\cdots}F$, $H{\cdots}Cl$ 거리를 보이며 더 강한 수소결합 가능성을 보였다. 그러나 에너지가 5 ~ 7 kJ 더 높게 나타났다. Methanol group과 F나 Cl이 서로 반대 방향을 향할 때 일반적으로 안정하나 앞의 가장 안정한 conformer보다는 에너지가 높다.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.35-40
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• 2007

The new PEI(poly(epoxy-imide))-nano Silica film has been synthesized via in situ CS sol process, and the chemical bonding and microstructure of nano silica dispersed in resin were examined by FT-IR, TAG and SEM. The dielectric properties of these hybrid films over a given temperature and frequency ranges have been studied in a point of view of stable chemical bonding of nano Silica filler. The results from IR spectra and SEM photograph indicated that PEI-Silica hybrid film prepared with nano CS sol process has been synthesized in uniform and chemical bonding. The decrease property of dielectric constant with CS content, tangent loss consistent of given frequency and temperature has been explained in terms of the chain movement of polymer through chemical bonging and size effect of nano silica. The new PEI-CS sol hybrid film with such stable chemical and dielectric properties was expected to be used as a high functional coating application in ET, IT and electric power products.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 2nd Korea-Japan Advanceed Semiconductor Packaging Technology Seminar
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• pp.39-45
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• 2000

A small camera module fabricated by including bare chip bonding methods is utilized to realize advanced mobile devices. One of the driving forces is the TOG (Tape On Glass) bonding method which reduces the packaging size of the image sensor clip. The TOG module is a new thinner and smaller image sensor module, using flip chip interconnection method with the ACP (Anisotropic Conductive Paste). The TOG production process was established by determining the optimum bonding conditions for both optical glass bonding and image sensor clip bonding lo the flexible PCB. The bonding conditions, including sufficient bonding margins, were studied. Another bonding method is the flip chip bonding method for DSP (Digital Signal Processor) chip. A new AC\ulcorner was developed to enable the short resin curing time of 10 sec. The bonding mechanism of the resin curing method was evaluated using FEM analysis. By using these flip chip bonding techniques, small camera module was realized.

• 한국재료학회지
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• 제19권11호
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• pp.625-630
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• 2009

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

• 대한화학회지
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• 제32권3호
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• pp.249-259
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• 1988

Methanol, ethanol, acetone, dimethylsulfoxide, N,N-dimethylformamide, tetrahydrofuran, dioxane, 및 acetonitrile의 8가지 분자에 대한 용매효과를 고찰할 목적으로 메탄올을 양성자로 하고, 8가지 분자를 양성자 받게로 하여, 이들 이합체를 AM1 Hamiltonian법과 supermolecule법에 의해 monomer 및 dimer의 optimized geometry, electron density, molecular energy 및 hydrogen-bonding energy를 계산하였다. 그 결과로 각 dimer의 hydrogen-bonding에 기여하는 stabilization energy 순서는 dimethylsulfoxide > ethanol > N,N-dimethylformamide > acetone > methanol > tatrahydrofuran > dioxane > acetonitrile임을 알았으며 이 안정성의 순서를 electron density의 변화 및 energy partition의 결과로 설명하였다.

• Journal of the Korean Wood Science and Technology
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• 제37권1호
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• pp.87-93
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• 2009

목재의 탄화과정에서 일어나는 화학적 변화를 알아보기 위하여 목탄의 기초물성과 화학결합양식의 변화를 조사하였다. 탄화온도 증가에 따른 pH 변화에 있어서는, $300^{\circ}C$와 같이 낮은 온도에서 탄화한 탄화물의 pH는 약산성 또는 중성에 가까우나, $600^{\circ}C$ 이상에서 탄화한 고온탄화물의 pH는 알칼리성을 띠는 것으로 나타났다. 또한 탄화온도가 증가하여 탄화정도가 더욱 진행되면, 탄재 내의 탄소함량이 증가하고, 수소와 산소함량이 감소하였으며, 이러한 경향은 $600^{\circ}C$까지의 탄화에서 현저하게 나타났으나, $600^{\circ}C$ 이상의 탄화온도에서는 그 변화가 완만하였다. 탄화온도가 높아짐에 다라 C-C 결합 비율이 증가하고, C-O-H 또는 C-O-R 결합 비율이 감소하는 경향이 뚜렷이 나타났다. 이는 C-O-H 등 산소를 포함한 결합이 분해되어 C-C결합 비율이 높아지고, 이는 새로운 관능기의 생성과도 관련되는 것으로 추정된다. 또한 탄화 온도의 상승에 따라 C=O결합 등의 비율이 다소 증가 또는 감소하는 것으로 보아, 일부는 분해, 생성, 재결합 등의 과정을 거치는 것으로 판단된다. 목탄의 이와 같은 화학적 변화에 대한 인식은 세공 특성 등 물리적인 파라메타만으로 흡착성을 이해하려고 할 때 발생하는 한계를 극복할 수 있는 사고가 되며, 또한 목탄의 성능개선과 신용도 개발의 기초가 될 것으로 생각된다.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2592-2596
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• 2012

Cysteine capped silver nanoparticles (Cys-AgNPs) have been synthesized by employing electrochemically active biofilm (EAB), $AgNO_3$ as precursor and sodium acetate as electron donor in aqueous solution at $30^{\circ}C$. Cys-AgNPs of 5-10 nm were synthesized and characterized by UV-Vis, FT-IR, XRD and TEM. Capping of the silver nanoparticles with cysteine provides stability to nanoparticles by a thiolate bond between the amino acid and the nanoparticle surface and hydrogen bonding among the Cys-AgNPs. In addition, the antibacterial effects of as-synthesized Cys-AgNPs have been tested against two pathogenic bacteria Escherichia coli (O157:H7) and Pseudomonas aeruginosa (PAO1). The results demonstrate that the as-synthesized Cys-AgNPs can proficiently inhibit the growth and multiplication of E. coli and P. aeruginosa.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• 한국표면공학회지
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• 제56권3호
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• pp.180-184
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• 2023

Scholars have proposed wafer-level bonding and three-dimensional (3D) stacked integrated circuit (IC) and have investigated Cu-Cu bonding to overcome the limitation of Moore's law. However, information about quantitative Cu-Cu direct-bonding conditions, such as temperature, pressure, and interfacial adhesion energy, is scant. This study determines the optimal temperature and pressure for Cu-Cu bonding by varying the bonding temperature to 100, 150, 200, 250, and 350 ℃ and pressure to 2,303 and 3,087 N/cm². Various conditions and methods for surface treatment were performed to prevent oxidation of the surface of the sample and remove organic compounds in Cu direct bonding as variables of temperature and pressure. EDX experiments were conducted to confirm chemical information on the bonding characteristics between the substrate and Cu to confirm the bonding mechanism between the substrate and Cu. In addition, after the combination with the change of temperature and pressure variables, UTM measurement was performed to investigate the bond force between the substrate and Cu, and it was confirmed that the bond force increased proportionally as the temperature and pressure increased.