• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.91-96
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• 2005

We report the efficient red light-emitting diodes based on the fluorescent dye 4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) and 5,6,11,12-tetraphenyl naphthacene (rubrene) codoped in the tris(8-hydroxyquinoline)aluminum $(Alq_3)$. Luminance efficiency of 2.2 cd/A with a Commission International De L'Eclairage (CIE) chromaticity coordinate of x, y = (0.640, 0:350) are achieved at the driving current density of $20\;mA/cm^2$. Adding the rubrene to the DCJTI in tris(8-hydroxyquinoline)aluminum $(Alq_3)$, the red color purity and luminance efficiency improved comparing to the DCJTI only doped devices because the rubrene molecules assist the polarization effect of DCJTI by molecular interaction and enhance the energy transfer from $(Alq_3)$ to DCJTI.

• 한국재료학회지
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• 제18권9호
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• pp.503-506
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• 2008

The effect of silver nanoparticles (NPs) incorporation on the electronic properties of poly (3, 4-ethylenedioxythiphene) : poly(styrenesulfonate) (PEDOT : PSS) films was investigated. The surface of silver NPs was stabilized with trisodium citrate to control the size of silver NPs and prevent their aggregation. We obtained ca. 5 nm sized silver NPs and dispersed NPs in PEDOT : PSS solution. Sheet resistance, surface morphology, bonding state, and work function values of the PEDOT : PSS films were modified by silver NPs incorporation as well as annealing temperature. Sodium in silver NPs solution could lead to a decrease of work function of PEDOT : PSS; however, large content of silver NPs have an effect on the increase in work function, resulting from charge localization on the silver NPs and a decrease in the number of charge-trapping-related defects by chemical bond formation.

• ETRI Journal
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• 제31권5호
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• pp.604-606
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• 2009

The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a $^{60}Co$ gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1438-1440
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• 1998

In this work, simultaneous measur of space charge and conduction current was c out in LDPE with air gap by Pulsed-Electro-Aco Method. Also, effect of long time charging at con electric field on the formation of space charge conduction was investigated. From the experim results. we knew that the homo space charge formed near the dielectric surfaces and moving the bulk of dielectric as the electric field elevated. This was related with the deep traps b carriers and de trapping by Poole-field lowering conduction current was coincident with the Pool emission. From the long time charging experimen obtained the results that the negative space was moving into the dielectric bulk as the cha continued and the positive space charge accumulated at upper surface of LDPE.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.73-76
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• 2014

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

• 대한전기학회논문지
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• 제41권2호
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• pp.185-191
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• 1992

In this paper, it is attempted to distinguish the charged particles and to judge the polarity by the use of Thermally Stimulated Current(TSC) and Temperature Gradient Thermally Stimulated Surface Potential Measurement(TG-TSSP)with experimental insulation material XLPE-EVA for power cables which is made by blending cross-linked polyethylene(XLPE) and ethylene-vinylacetate copolymer(EVA). In addition, it is performed to investigate the effect of EVA blending. From the experimental results, it is known that for the case of XLPE-EVA blended experimental material, the generation of space charged electric field is not obtained in the high temperature region due to the obatruction of the injection of trapping carrier by the electron and the positive hole.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• 전자공학회논문지A
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• 제31A권4호
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• pp.77-83
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• 1994

In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.