• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Journal of Microbiology and Biotechnology
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• 제28권1호
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• pp.77-86
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• 2018

The human pathogen and food spoiler Bacillus cereus can form biofilms that act as a persistent source of contamination, which is of public health concern. This study aimed to understand how the source of isolation might affect the behavior of biofilm formation. Biofilm formation abilities of 56 strains of B. cereus isolated from different environments, including human food poisoning, farm, and food, were determined. Crystal violet assay results revealed significant (p < 0.05) differences in biofilm formation abilities among the strains isolated from different sources only at an early stage of incubation. However, strain origin showed no impact on later stage of biofilm formation. Next, correlation of the group of isolates on the basis of their biofilm-forming abilities with the number of sessile cells, sporulation, and extracellular polymeric substance (EPS) formation was determined. The number of sessile cells and spores in biofilms was greatly influenced by the groups of isolates that formed dense, moderate, and weak biofilms. The contribution of extracellular DNA and/or proteins to EPS formation was also positively correlated with biofilm formation abilities. Our results that the source of isolation had significant impact on biofilm formation might provide important information to develop strategies to control B. cereus biofilm formation.

• Journal of Power Electronics
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• 제18권3호
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• pp.931-943
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• 2018

Wireless power transfer (WPT) technology has been the focus of a lot of research due to its safety and convenience. The Z-source inverter (ZSI) was introduced into WPT systems to realize improved system performance. The ZSI regulates the dc-rail voltage in WPT systems without front-end converters and makes the inverter bridge immune to shoot-through states. However, when the WPT system is combined with a ZSI, the system parameters must be configured to prevent the ZSI from entering an "accidental shoot-through" (AST) state. This state can increase the THD and decrease system power and efficiency. This paper presents a mathematical analysis for the characteristics of a WPT system and a ZSI while addressing the causes of the AST state. To deal with this issue, the impact of the system parameters on the output are analyzed under two control algorithms and the primary compensation capacitance range is derived in detail. To validate the analysis, both simulations and experiments are carried out and the obtained results are presented.

• 전자공학회논문지A
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• 제33A권3호
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• pp.107-116
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• 1996

Recently, the flash memory has been abstracting great attention in the semiconductor market in the world because of its potential applications as mass storage devices. One of the most significant barriers to the scalling-down of the stacked-gate devices such as EPROM's and flash EEPROM's is the large subthreshold leakage in the unselected cells connected with the bit line of a selected cell in the array during programming. The large subthreshold leakge is majorly due to the capacitive coupling between the floating gates of the unselectd cells and the bit line of selected cell. In this paper, a new programming method to redcue significantly the drain turn-on leakage in the unselected cells during programming has been studied, where a little positive voltage (0.25-0.75V) is applied to the soruce during programming unlike the conventional programming method in which the source is grounded. The resutls of the PISCES simulations and the electrical measurements for the standard EPROM with 0.35.mu.m effective channel length and 1.0.mu.m effective channel width show that the subthreshold leakage in the unselectd cells is significantly large when the source is grounded, whereas it is negligibly small when the source is biased ot a little positive voltage during programming. On the other hadn, the positive bias on the source is found to have little effects on the programming speed of the EPROM.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2009년도 정보 및 제어 심포지움 논문집
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• pp.237-239
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• 2009

The purpose of this research is to propose a system to detect a strip defect on a iron plate using an image processing, one way of finding defects on an iron plate. An existing way of image processing is using a light source which release a light energy in a certain frequency and a light absorbing display which responds to the light source. This research attempts to detect defects by using the image processing which handles an illumination, without depending on characteristics of light frequency. One of the advantages of this method is that it makes up for the weakness of the existing method which was too difficult for users to notice a defect. Also this method makes it possible to realize a real-time monitoring on a plate of iron.

• 전자공학회논문지B
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• 제32B권11호
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• pp.1374-1382
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• 1995

In TFT-LCDs, as the display size area becomes larger, and the resolution higher, we have to consider the image degradation effects due to the incorporation of the TFT-LCD parameters such as the data-line resistance, the common electrode resistance, the data-line to common parasitic capacitance, and the output characteristics of driver ICs. One of the degradation effects is crosstalk resulting from the coupling between the source bus-line and common electrode. Since a source signal which represents a large number of display data is supposed to vary frequently, the common signal level is affected through the coupling effect, resulting in the degradation of nearby pixel drive signals. Therefore, we proposed a method to compensate for this source-common electrode coupling effect, we also designed and experimented the feasibility of our crosstalk compensation circuit in the actual TFT-LCD. We saw that the newly designed compensation circuit greatly reduced the crosstalk in display pattern image.

• 한국인쇄학회지
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• 제22권2호
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• Journal of information and communication convergence engineering
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• 제14권3호
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• pp.171-176
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• 2016

In this study, we investigate the physical layer secrecy performance of RF energy harvesting (EH) networks over Rayleigh fading channels. The RF-EH system considered here consists of one power transfer station, one source, one destination, and multiple passive eavesdroppers. The source harvests energy from the power transfer station and transmits the information to the destination by using a time switching-based relaying protocol. The eavesdroppers try to extract the transmitted information without an active attack. By using the statistical characteristics of the signal-to-noise ratio (SNR), the exact closed-form expressions of the existence probability of the secrecy capacity and the secrecy outage probability are derived. Further, we analyze the secrecy performance of the system with respect to various system parameters, such as the location of the system elements and the number of eavesdroppers. Finally, the equivalent Monte Carlo simulation results are provided to confirm the correctness of our calculations.

• Journal of Advanced Marine Engineering and Technology
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• 제28권1호
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• pp.56-64
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• 2004

A numerical study have been performed on a cavity with one heat source by the open ratio and tilt angle. The goal of this study is to get the information for designing a solar collector absorber. semi-conductor equipment and block heater and so on. The parameters for this study is the various open ratio. and tilt angle of the cavity and Rayleigh numbers The finite volume method with SIMPLE computational algorithm are used and calculated the heat transfer in the cavity. As a result, the heat trans(or was promoted by increase of Rayliegh numbers and open ratios But, the heat transfer was not promted at lower wall of cavity because the flow pattern are very small at lower space in the cavity(Or=0.1) As the Rayleigh number is increased the mean nusselt numbers are increased at inside wall.

• Journal of Information Display
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• 제5권4호
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• pp.1-6
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• 2004

In this paper, we investigate on the characteristics of poly-Si TFTs reuired for the implementation of analog circuits to be integrated with System-on-Glass (SoG). Matching requirements in terms of resistor values, threshold voltage and mobility of poly-Si TFTs are derived as a function of the resolution of display system. Effective mobility of poly-Si TFTs required for the realization of source driver is analyzed for various panel sizes.