• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• The Magazine of the IEIE
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• v.37 no.8
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• pp.50-59
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• 2010

$0.18-{\mu}m$ high voltage technology 13.5V high voltage well-based symmetric EDMOS isolated by MTI was designed and fabricated. Using calibrated process and device model parameters, the characteristics of the symmetric and asymmetric EDMOS have been simulated. The asymmetric EDMOS has higher performance, better $R_{sp}$ / BVDSS figure-of-merit, short-channel immunity and smaller pitch size than the symmetric EDMOS. The asymmetric EDMOST is a good candidate for low-power and smaller source driver chips. The low voltage logic well-based EDMOS process has advantages over high voltage well-based EDMOS in process cost by eliminating the process steps of high-voltage well/drift implant, high-temperature long-time thermal steps, etc. The specific on-resistance of our well-designed logic well-based EDMOSTs is compatible with the smallest one published. TCAD simulation and measurement results show that the improved logic well-based nEDMOS has better electrical characteristics than those of the conventional one. The improved EDMOS proposed in this paper is an excellent candidate to be integrated with low voltage logic devices for high-performance low-power low-cost chips.

• Journal of Biomedical Engineering Research
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• v.28 no.2
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• pp.205-211
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• 2007

A novel envelope extraction algorithm for speech processor of cochlear implants, called adaptation algorithm, was developed which is based on a adaptation effect of the inner hair cell(IHC)/auditory nerve(AN) synapse. We achieved acoustic simulation and hearing experiments with 12 normal hearing persons to compare this adaptation algorithm with existent standard envelope extraction method. The results shows that speech processing strategy using adaptation algorithm showed significant improvements in speech recognition rate under most channel/noise condition, compared to conventional strategy We verified that the proposed adaptation algorithm may yield better speech perception under considerable amount of noise, compared to the conventional speech processing strategy.

• International Journal of Oral Biology
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• v.37 no.3
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• pp.121-129
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• 2012

Previous clinical studies have demonstrated that gabapentin, a drug that binds to the voltage-gated calcium channel ${\alpha}2{\delta}1$ subunit proteins, is effective in the management of neuropathic pain, but there is limited evidence that addresses the participation of glial cells in the antiallodynic effects of this drug. The present study investigated the participation of glial cells in the anti-nociceptive effects of gabapentin in rats with trigeminal neuropathic pain produced by mal-positioned dental implants. Under anesthesia, the left mandibular second molar was extracted and replaced by a miniature dental implant to induce injury to the inferior alveolar nerve. Mal-positioned dental implants significantly decreased the air-puff thresholds both ipsilateral and contralateral to the injury site. Gabapentin was administered intracisternally beginning on postoperative day (POD) 1 or on POD 7 for three days. Early or late treatment with 0.3, 3, or 30 ${\mu}g$ of gabapentin produced significant anti-allodynic effect in the rats with mal-positioned dental implants. On POD 9, in the mal-positioned dental implants group, OX-42, a microglia marker, and GFAP, an astrocyte marker, were found to be up-regulated in the medullary dorsal horn, compared with the naive group. However, the intracisternal administration of gabapentin (30 ${\mu}g$) failed to reduce the number of activated microglia or astrocytes in the medullary dorsal horn. These findings suggest that gabapentin produces significant antinociceptive effects, which are not mediated by the inhibition of glial cell function in the medullary dorsal horn, in a rat model of trigeminal neuropathic pain.

• International Journal of Oral Biology
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• v.46 no.4
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• pp.176-183
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• 2021

Oral squamous cell carcinoma (OSCC) metastasis is characterized by distant metastasis and local recurrence. Combined chemotherapy with cisplatin and 5-fluorouracil is routinely used to treat patients with OSCC, and the combined use of gefitinib with cytotoxic drugs has been reported to enhance the sensitivity of cancer cells in vitro. However, the development of drug resistance because of prolonged chemotherapy is inevitable, leading to a poor prognosis. Therefore, understanding alterations in signaling pathways and gene expression is crucial for overcoming the development of drug resistance. However, the altered characterization of Ca²⁺ signaling in drug-resistant OSCC cells remains unclear. In this study, we investigated alterations in intracellular Ca²⁺ ([Ca²⁺]_i) mobilization upon the development of gefitinib resistance in human tongue squamous carcinoma cell line (HSC)-3 and HSC-4 using ratiometric analysis. This study demonstrated the presence of altered epidermal growth factor- and purinergic agonist-mediated [Ca²⁺]_i mobilization in gefitinib-resistant OSCC cells. Moreover, Ca²⁺ content in the endoplasmic reticulum, store-operated calcium entry, and lysosomal Ca²⁺ release through the transient receptor potential mucolipin 1, were confirmed to be significantly reduced upon the development of apoptosis resistance. Consistent with [Ca²⁺]_i mobilization, we identified modified expression levels of Ca²⁺ signaling-related genes in gefitinib-resistant cells. Taken together, we propose that the regulation of [Ca²⁺]_i mobilization and related gene expression can be a new strategy to overcome drug resistance in patients with cancer.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.4_2
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• pp.623-628
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• 2023

The purpose of this study was to evaluate the fracture strength and removal torque value (RTV) of a conventional angled abutment and a newly developed angled abutment (Beauty up abutment) with an angulated screw access hole. Each abutment was divided into a control group and an experimental group (n = 20, respectively). To measure the fracture strength, the abutment was connected to the internal hex implant with 30 Ncm torque, and a load was applied at 30 degree angle with cross-head speed of 1 mm/min using a universal testing machine according to the ISO 14801:2016 standard. To measure RTV, each abutment was fastened to the implant with 30 Ncm torque. Retightening was performed after 10 minutes, and initial RTV was measured with a digital torque gauge. After retightening, a load of 250 N was applied to the abutment at a 30 degree angle using a chewing simulator. After a total of 100,000 repeated loads, RTV was measured. Statistical analysis was performed using Wilcoxon signed rank test and Mann-Whitney U test (α = .05). The fracture strength of the experimental group was statistically significantly lower than that of the control group (P = .009). There was no significant difference between initial RTV and post-loading RTV between the experimental group and the control group (P = .753, P = .527, respectively), and cyclic loading did not significantly affect RTV in both groups (P = .078).

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.3
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• pp.352-362
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• 2005

Statement of problem. Accurate impression is essential to success of implant prostheses. But there have been few studies about the accuracy of fixture-level impression techniques in internal connection implant systems. Purpose. The purpose of this study was to compare the accuracy of two fixture-level impression techniques in two conditions (parallel and divergent) and to assess the effect of tightening sequences and forces on stresses generated on superstructures in internal connection implant system (Astra Tech). Material and methods. Two metal master frameworks made from two abutments (Cast-to Abutment ST) each and a corresponding, passively fitting, dental stone master cast with four fixture replicas (Fixture Replica ST) were fabricated. Ten dental stone casts for each impression techniques (direct unsplinted & splinted technique) were made with vinyl polysiloxane impressions from the master cast. Strain gauges for each framework were fixed midway between abutments to measure the degree of framework deformation on each stone cast. Pairs of strain gauges placed opposite each other constituted one channel (half Wheatstone bridge) to read deformation in four directions (superior, inferior, anterior, and posterior). Deformation data were analyzed using one-way ANOVA and the Tukey test at the .01 level of significance. And the effect of tightening sequences (right-to-left and left-to-right) and forces (10 Ncm and 20 Ncm) were assessed with ten stone casts made from parallel condition by the splinted technique. Deformation data were analyzed using paired t-test at the .01 level of significance. Conclusions. Within the limitations of this study, the following conclusions could be drawn. 1. Frameworks bent toward the inferior side on all casts made by both direct unsplinted and splinted impression techniques in both parallel and divergent conditions. 2. There was no statistically significant difference of accuracy between the direct unsplinted and splinted impression techniques in both parallel and divergent conditions (P>.01). 3. There was no statistically significant difference of stress according to screw tightening sequences in casts made by the splinted impression technique in parallel condition (P>.01). 4. Greater tightening force resulted in greater stress in casts made by the splinted impression technique in parallel condition (P<.01).

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.43 no.5 s.311
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• pp.79-87
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• 2006

In this study, we evaluated the performance of a companding strategy as a preprocessing for speech enhancement and noise reduction. The proposed algorithm is based on two tone suppression that is human's hearing characteristics. This algorithm enhances spectral peak of speech signal and reduces background noise, however it has tradeoff characteristics between speech distortion and noise reduction due to limited channel number and nonlinear block. Therefore, we designed two different companding structures that have relative characteristics of noise reduction and speech distortion and found suitable companding structures by difference of individual speech perception ability in noise environment. Thus we proposed speech perception enhancement of cochlear implant user in noise environment with low SNR. The performance of the proposed algorithm was evaluated through 5 normal hearing listeners using noise band simulation. Improvement of speech perception was observed for all subjects and each subject preferred the different type of companding structure.

• 한국가시화정보학회:학술대회논문집
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• 2002.04a
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• pp.51-78
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• 2002

A number of research groups worldwide are studying electronic implants that can be mounted on retinal optic nerve/visual cortex to restore vision of patients suffering from retinal degeneration. The implants consist of a neural interface made of biocompatible materials, one or more integrated circuits for stimuli generation, a camera, an image processor, and a telemetric channel. The realization of these classes of neural prosthetic devices is largely due to the explosive development of micro- and nano-electronics technologies in the late $20^{th}$ century and biotechnologies more recently. Animal experiments showed promise and some human experiments are in progress to indicate that recognition of images can be obtained and improved over time. We, at NBS-ERC of SNU, have started our own retinal implant project in 2000. We have selected polyimide as the biomaterial for an epi-retinal stimulator. In-vitro and in-vivo biocompatibility studies have been performed on the electrode arrays. We have obtained good affinity to retinal pigment epithelial cells and no harmful effect. The implant also showed very good stability and safety in rabbit eye for 12 weeks. We have also demonstrated that through proper stimulation of inner retina, meaning vision can be obtained.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.58-65
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• 2015

This paper presents the design of an implantable stimulation IC intended for neural prosthetic devices using $0.18-{\mu}m$ standard CMOS technology. The proposed single-channel biphasic current stimulator prototype is designed to deliver up to 1 mA of current to the tissue-equivalent $10-k{\Omega}$ load using 12.8-V supply voltage. To utilize only low-voltage standard CMOS transistors in the design, transistor stacking with dynamic gate biasing technique is used for reliable operation at high-voltage. In addition, active charge balancing circuit is used to maintain zero net charge at the stimulation site over the complete stimulation cycle. The area of the total stimulator IC consisting of DAC, current stimulation output driver, level-shifters, digital logic, and active charge balancer is $0.13mm^2$ and is suitable to be applied for multi-channel neural prosthetic devices.