• Journal of Power System Engineering
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• v.13 no.1
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• pp.5-12
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• 2009

The present work aims to estimate channel, shell, tube and tube sheet stresses of shell and tube oil cooler stemmed from various parameters. These parameters involve size, thickness and dimension of shell and tube oil cooler, including fluid temperature. The main purpose of the present work is to ensure safety of design products and also develop new products rapidly. For stress evaluation of oil coolers, first of all, the maximum pressure on the shell-side and on the tube side is fixed with 3.1MPa and 1.5MPa, respectively. Secondly, the pressure on each side varies from 2MPa to 3.1MPa on the shell side and tram 0.6MPa to 2MPa on the tube side. Various parameters under these conditions are employed to estimate design stresses on each side of oil cooler. These basic information related to stresses will be useful for a designer or manufacturer of an oil cooler.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.33-37
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• 1992

AlGaAs/GaAs quantum well delta-doped channel FET's have been successfully fabricated using by low-pressure metalorganic chemical vapor deposition(LP-MOCVD). The FET's with a gate dimension of 1.8$\mu$m $\times$ 100$\mu$m have a maximum transconductance of 190 mS/mm and a maximum current density of 425 mA/nm. The devices show extremely broad transconductances with a large voltage swing of 2.4V. The S-parameter measurements have indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. These values are among the best performance reported for GaAs based heterojunction FET's with a similar device geometry.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.291-296
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• 2005

In this paper, the PDMS based micromixer having 3-dimension triangular structure has been developed for the reaction of samples in the micro volume. The mixing efficiency was measured according to the change of Reynolds number (Re: 0.08, 0.8, 8, 16) and channel height (100, 200, $300{\mu}m$). Total length of mixing region is 7.4 mm and the measured mixing efficiencies at the outlet were over 85 %. Within the mixing length 2.4 mm, the mixing efficiencies were more than 70 % at any Reynolds numbers, and this indicates the strong mixing has occurred inside the mixing channel due the triangular structures. By employing these 2 mixers, we have fabricated the microreactor to detect the glucose-catalysts reaction. The microreactor showed good reactivity of glucose and enzymes with the small amount of sample solution.

• The Transactions of the Korea Information Processing Society
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• v.4 no.11
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• pp.2732-2744
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• 1997

This paper is based on multicasting model in k-ary n-cubes, and Proposes an adaptive wormhole routing algorithm which allows faults and channel contention. The proposed algorithm only requires $2{\times}n$ virtual channels per physical channel which is proportional to the dimension n in order to allow (n-1) faults in a k-ary n-cube. This method uses smaller number of virtual channels than the previously Proposed adaptive routing algorithms [5, 18]. Through a chaos simulator, we have measured message delay considering fault-tolerant as well as message traffic to our adaptive routing algorithm.

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.13 no.1
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• pp.5-13
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• 1984

This analysis of numerical procedure is prediction of laminar flow and heat transfer at two dimension and steady flow in asymmetric sudden expansion channel. At former study, to analyse the flows with separation, the full Navier-Stokes equation is used, but there are many difficulties to analyse, and although significant progress has been made in the development of efficient computational methods for the Navier-Stokes equations, very large computation times are still required. In case of reward-facing flow, boundary-layer equation is used instead of full Navier-Stokes equation to analyse velocity fields, and result of this numerical analysis is good agreement with the given experimental study. In this case, since the computer time required for the boundary-layer calculation is an order of magnitude less than required for the solution of the full Navier-Stokes equation, this boundary-layer model provides a good approximate solution.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2002.10a
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• pp.297-300
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• 2002

Semi-two dimension numerical models were applied to study on the hydraulic and sedimentologic characteristics of upstream and downstream channel section in Dal stream. The feature of this paper is (1) to analyse the effects of bed changes by sediment transport formulas, (2) to analyse the effects of bed changes by stream tube. The simulation results of Meyer-peter and Muller formula for long-term bed changes are good when compared to the measured data.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.775-778
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• 2003

In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10～35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schrodinger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.1
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• pp.68-74
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• 1985

In this Paper, we present a non-doglegging channel routing system for If layout using standard cells. This system produces a final two-layer wiring pattern in the horizontal track between two rows, each of which is a linear placement of standard cells of identical heights, satisfying the given net list specification. The layout of CMOS cell library Including nine primitive cells used in this paper is represented in CIF (Caltech Intermediate Form) using λ(Lambda) of 2 microns in Mead-Conway layout representation scheme. The cell dimension and 1/0 characteristics such as name, position and layer type of the pins are stored in Component Library to be used in the channel routing progranl, CROUT. 4 subprogram, NET-PLOT, was used to report a schemdtic layout result, and another subprogram, NETCIF was used to with a full-fledged final layout representation in GIF, A test run for realizing a dynamicmaster-slave D flip-flop with set/reset using primitive cells was shown to take 4 CPU seconds on VAX 11/780.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.805-811
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• 2012

In this paper, movement of conduction path has been analyzed for electron distribution in the channel of double gate(DG) MOSFET. The analytical potential distribution model of Poisson equation, validated in previous researches, has been used to analyze transport characteristics. DGMOSFETs have the adventage to be able to reduce short channel effects due to improvement for controllability of current by two gate voltages. Since short channel effects have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. Also transport characteristics have been influenced on the deviation of electron distribution and conduction path. In this study, the influence of electron distribution on conduction path has been analyzed according to intensity and distribution of doping and channel dimension.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.793-798
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• 2012

In this paper, dependence of subthreshold current has been analyzed for doping distribution and channel structure of double gate(DG) MOSFET. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. Since DGMOSFETs have reduced short channel effects with improvement of current controllability by gate voltages, subthreshold characteristics have been enhanced. The control of current in subthreshold region is very important factor related with power consumption for ultra large scaled integration. The deviation of threshold voltage has been qualitatively analyzed using the changes of subthreshold current for gate voltages. Subthreshold current has been influenced by doping distribution and channel dimension. In this study, the influence of channel length and thickness on current has been analyzed according to intensity and distribution of doping.