• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.3
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• pp.83-90
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• 2009

This paper presents the design and measurement of a flight model for a Ku-Band Linearized Channel Amplifier. All MMICs, Variable Gain Amplifier (VGA), Variable Voltage Attenuator ('.IVA), Branch line Coupler and Detector for Pre-distorter are fabricated using a Thin-Film Hybrid process. The performance of the fabricated module is verified through the radio frequency circuit simulation tool and electrical function test in space environment.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.452-456
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• 2016

In this paper, a dual-channel readout amplifier array is realized in a standard $0.18{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode with 0.9 A/W responsivity and a 1.0 Gb/s readout amplifier(ROA). The proposed ROA shares the basic configuration of the previously reported feedforward TIA, except that it exploits a replica input to exclude a low pass filter(LPF), thus reducing chip area and improving integration level, and to efficiently reject common-mode noises. Measured results demonstrate that each channel achieves $70dB{\Omega}$ transimpedance gain, 829 MHz bandwidth, -22 dBm sensitivity for $10^{-9}BER$, -34 dB crosstalk between adjacent channels, and 45 mW power dissipation from a single 1.8 V supply.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.11
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• pp.1666-1671
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• 2022

The structure of a high-power gain-flattened long wavelength band (L-band) optical amplifier was optimized, which was implemented for 64-channel wavelength division multiplexed optical signals with a channel spacing of 50 GHz. The output characteristics of this L-band amplifier were measured and analyzed. The amplifier of the optimized two-stage amplification configuration had a flattened gain of 20 dB within 1 dB deviation between 1570 and 1600 nm for -2 dBm input power condition. The noise figure under this condition was minimized to within 6 dB in the amplification bandwidth. The gain flattening was realized by considering only the characteristics of gain medium in the amplifier without using additional optical or electrical devices. The proposed amplifier consisted of two stages of amplification stages, each of which was based on the erbium-doped fiber amplifier (EDFA) structure. The erbium-doped fiber length and pumping structures in each stage of the amplifier were optimized through experiments.

• Journal of Electrical Engineering and Technology
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• v.3 no.4
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• pp.566-570
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• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• The Journal of the Acoustical Society of Korea
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• v.26 no.5
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• pp.188-193
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• 2007

In general, analog amplifiers for 5.1 or more channels have been used to configure home theater systems. In order to make high-performance systems, it is desirable to process audio signals in digital techniques in consideration of output and efficiency of speakers. Especially we need 7.1-channel system to separate audio signals efficiently. In this paper we implemented the architecture of S/PDIF 7.1-channel digital amplifier for home theater systems. The amplifier shows good performance with less loss of original sounds because of both strong characteristics against noises and direct processing of input data.

• ETRI Journal
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• v.42 no.5
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• pp.773-780
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• 2020

A 40 nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the output 1 dB compression point (P1dB) to support high-linear wideband applications, and is used for the local supply voltage of digital circuitry for gain control. The proposed circuit achieved an output P1dB of 10.7 dBm with over 22.8 dBm of output 3rd-order intercept point up to 0.9 GHz and demonstrated a 55 dBc adjacent channel leakage ratio (ACLR) for the 802.11af with -5 dBm channel power. To the best of our knowledge, this is the first demonstration of the wideband carrier-aggregated drive amplifier that achieves the highest ACLR performance.

• Journal of the Korea Computer Industry Society
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• v.8 no.2
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• pp.123-130
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• 2007

In this paper, the design requirement and the electrical circuit analysis are performed to construct the multi-channel cardiac activation pre-amplifier necessary for a signal conditioning circuit. The general 64 channel configuration is expanded into 128 channels to enhance the spatial resolution on the mapped surface of the heart. The 128 channels pre-amplifier consists of input circuit, differential amplifier, right leg driven circuit and main-amplifier with notch filter part.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.442-448
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• 2014

For the first time, a novel analytical model of the net gain for a Raman-EDFA hybrid optical amplifier (HOA) is proposed and its various parameters optimized using a genetic algorithm. Our method has been shown to be robust in the simultaneous analysis of multiple parameters (Raman length, EDFA length, and pump powers) to obtain large gain. The optimized HOA is further investigated at the system level for the scenario of a 50-channel DWDM system with 0.2-nm channel spacing. With an optimized HOA, a flat gain of >17 dB is obtained over the effective ITU-T wavelength grid with a variation of less than 1.5 dB, without using any gain-flattening technique. The obtained noise figure is also the lowest value ever reported for a Raman-EDFA HOA at reduced channel spacing.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.28-34
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• 2003

In this paper, a predistortion linearizer using series diode is proposed for linearizing the power amplifier in microwave radio systems. The power amplifier should be operated near saturation region to achieve high efficiency. But at this region, amplitude and phase distortions of the amplifier remarkably increase with the increase of input power and cause a significant adjacent channel interference. The linearizer is composed of a series diode with a parallel capacitor, which provides positive amplitude and negative phase deviations with the increasing input power. This type of linearizer using the nonlinearity of diode has improved the C/I(Carrier to Intermodulation Distortion) ratio well. By applying this linearizer to two-tone 880MHz power amplifier, adjacent channel leakage power is improved up to 5dBm.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.5
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• pp.575-582
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• 2007

In this paper, a 100 Watt high power amplifier has been implemented and performed evaluation, which is operating at UHF band ($470\;{\sim}\;806\;MHz$) for Digital TV repeater. To achieve increase of bandwidth and high power capability, 3-way power combiner and divider of Wilkinson type was adopted. In order to measure the fabricated 100 Watt power amplifier, the estimation technique function which makes equivalent mask was used. As a result of the measurement, the existence of pilot signal is confirmed and the signal transmitted at the rated output power 100 Watt is brought out the flat feature through 6 MHz bandwidth. and it resulted that its value was less than -47 dB at the edge of radiation channel and less than -110 dB at more than 6 MHz position from channel edge.