• Proceedings of the Optical Society of Korea Conference
• /
• 2006.07a
• /
• pp.499-500
• /
• 2006

• Journal of the Korean Physical Society
• /
• v.73 no.11
• /
• pp.1684-1690
• /
• 2018

The layered semiconductors $Bi_2O_2Q$ (Q = S, Se) consists of $Bi_2O_2$ layers sandwiched by Q square nets. On the basis of density functional theory calculations, we examined the thermoelectric properties of $Bi_2O_2S$, $Bi_2O_2Se$ as well as hypothetical structure of $Bi_2O_2$($S_{0.5}Se_{0.5}$) consisting of mixed chalcogen nets. The thermoelectric power factor of $Bi_2O_2S_{0.5}Se_{0.5}$ is much greater than those of $Bi_2O_2S$ and $Bi_2O_2Se$, suggesting that introducing mixed chalcogen net in $Bi_2O_2Q$ is a possible way of enhancing the thermoelectric property of $Bi_2O_2Q$.

• Journal of the Korean Chemical Society
• /
• v.50 no.4
• /
• pp.315-320
• /
• 2006

manganese oxides have been prepared by Chimie Douce redox reaction between permanganate and chalcogen element fine powder under acidic condition (pH = 1). According to powder X-ray diffraction analyses, the S- and Se-doped manganese oxides are crystallized with layered birnessite and tunnel-type -MnO2 structures, respectively. On the contrary, Te-doped compound was found to be X-ray amorphous. According to EDS analyses, these compounds contain chalcogen dopants with the ratio of chalcogen/manganese = 4-7%. We have investigated the chemical bonding character of these materials with X-ray absorption spectroscopic (XAS) analysis. Mn K-edge XAS results clearly demonstrated that the manganese ions are stabilized in octahedral symmetry with the mixed oxidation states of +3/+4. On the other hand, according to Se K- and Te L1-edge XAS results, selenium and tellurium elements have the high oxidation states of +6, which is surely due to the oxidation of neutral chalcogen element by the strong oxidant permanganate ion. Taking into account their crystal structures and Mn oxidation states, the obtained manganese oxides are expected to be applicable as electrode materials for lithium secondary batteries.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.4
• /
• pp.485-490
• /
• 2004

Silver-needle shaped crystals of $KLa_2Sb_3S_9$ from $K_2S_x$ flux and $KSm_2Sb_3Se_8$ from NaCl/KCl flux reactions were obtained and their crystal structures were determined by the single crystal X-ray diffraction method. $KLa_2Sb_3S_9$ crystallizes in the orthorhombic noncentrosymmetric space group $P2_12_12_1$ (No.19) with a unit cell of a = 4.220(3) ${\AA}$, b = 24.145(2) ${\AA}$, c = 14.757(5) ${\AA}$ and Z = 4. $KSm_2Sb_3Se_8$ crystallizes in the orthorhombic space group Pnma (No.62) with a unit cell of a = 16.719(3) ${\AA}$, b = 4.1236(8) ${\AA}$, c = 22.151(4) ${\AA}$ and Z = 4. Both structures have three-dimensional tunnel frameworks filled with $K^+$ ions. $KSm_2Sb_3Se_8$ is an ordered version of $ALn_{1{\pm}X}B_i{4{\pm}X}S_8$, and it is made up of NaCl-type and $Gd_2S_3$-type fragments. $KLa_2Sb_3S_9$ also contains building fragments similar to those of $KSm_2Sb_3Se_8$, however, there are chalcogen-chalcogen bonds in the $Gd_2S_3$-type fragment. The formula of $KLa_2Sb_3S_9$ can be described as $(K^+ )(La^{3+})_2(Sb^{3+})^3(S^{2-})_7(S_2^{2-})$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.368.1-368.1
• /
• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Journal of the Korean Chemical Society
• /
• v.49 no.6
• /
• pp.603-608
• /
• 2005

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.35-39
• /
• 2019

Effect of Ge₂Sb₂Te₅ (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.3.1-3.1
• /
• 2011

Nanoengineered materials with advanced architectures are critical building blocks to modulate conventional material properties or amplify interface behavior for enhanced device performance. While several techniques exist for creating one dimensional heterostructures, electrospinning has emerged as a versatile, scalable, and cost-effective method to synthesize ultra-long nanofibers with controlled diameter (a few nanometres to several micrometres) and composition. In addition, different morphologies (e.g., nano-webs, beaded or smooth cylindrical fibers, and nanoribbons) and structures (e.g., core-.shell, hollow, branched, helical and porous structures) can be readily obtained by controlling different processing parameters. Although various nanofibers including polymers, carbon, ceramics and metals have been synthesized using direct electrospinning or through post-spinning processes, limited works were reported on the compound semiconducting nanofibers because of incompatibility of precursors. In this work, we combined electrospinning and galvanic displacement reaction to demonstrate cost-effective high throughput fabrication of ultra-long hollow semiconducting chalcogen and chalcogenide nanofibers. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions, morphology, and crystal structures, providing a large material database to tune electrode potentials, thereby imparting control over the composition and shape of the nanostructures that evolved during galvanic displacement reaction.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.6
• /
• pp.504-507
• /
• 1995

The reaction of Co2(CO)8 with 3,6-di-tert-butyl-1,2-benzoquinone in the presence of the respective 4,4'-chalcogenobispyridine results in the coordination polymers of [CoⅢ(4,4'-X(Py)2)(DBSQ)(DBCat)]n (X=S, Se, Te; Py=pyridine; DBSQ=3,6-di-tert-butylsemiquinone; DBCat=3,6-di-tert-butylcatechol). The title compounds undergo an intramolecular Cat → Co electron transfer, and thus change toward the [CoⅡ(4,4'-X(Py)2)(DBSQ)2]n at elevated temperature. The temperature-switching properties of the compounds directly depend upon the electronegativity of the chalcogen atom of the 4,4'-chalcogenobispyridine coligands. The spectroscopic data disclose that the properties of [CoⅢ(4,4'-S(Py)2)(DBSQ)(DBCat)]n and [CoⅢ(4,4'-Se(Py)2)(DBSQ)(DBCat)]n are similar each other in contrast to those of [CoⅢ(4,4'-Te(Py)2)(DBSQ)(DBCat)]n.

• Applied Microscopy
• /
• v.50
• /
• pp.27.1-27.6
• /
• 2020

Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS₂ and WS₂, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS₂ sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.