• Title/Summary/Keyword: cell well

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Memory Circuit of Nonvolatile Single Transistor Ferroelectric Field Effect Transistor (비휘발성 단일트랜지스터 강유전체 메모리 회로)

  • 양일석;유병곤;유인규;이원재
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.55-58
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    • 2000
  • This paper describes a single transistor type ferroelectric field effect transistor (1T FeFET) memory celt scheme which can select one unit memory cell and program/read it. To solve the selection problem of 1T FeEET memory cell array, the row direction common well is electrically isolated from different adjacent row direction column. So, we can control voltage of common well line. By applying bias voltage to Gate and Well, respectively, we can implant IT FeEET memory cell scheme which no interface problem and can bit operation. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.

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Differentiation of Chromophobe Renal Cell Carcinoma and Clear Cell Renal Cell Carcinoma by Using Helical CT (나선식 CT를 이용한 혐색소형 신세포암과 투명세포형 신세포암의 감별)

  • Kim, Hong-Chul;Cho, Jae-Ho
    • Journal of Yeungnam Medical Science
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    • v.29 no.1
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    • pp.14-18
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    • 2012
  • Background: The purpose of this study was to differentiate chromophobe renal cell carcinoma and clear cell renal cell carcinoma on helical CT. Methods: The CT images of 9 patients histopathologically proven to have chromophobe renal cell carcinoma and 20 patients with clear cell renal cell carcinoma were reviewed. The tumor sizes, margins, enhancement degrees and patterns, presence or absence of calcification, and tumor spread patterns (including perinephric changes, venous invasion, lymphadenopathy, and distant metastasis) were compared. Results: All the chromophobe renal cell carcinomas showed well-demarcated margins. Thechromophobe renal cell carcinomas showed milder enhancements than the clear cell renal cell carcinomas. The sensitivity and specificity for differentiating the chromophobe renal cell carcinoma from the clear cell renal cell carcinoma were 100 and 88%, respectively, when 101 Hounsfield units was used as the cut-off value in the corticomedullary phase, and 95 and 100% when a less-than-three-time enhancement change was used as a cut-off value in the corticomedullary phase (p<0.05). The chromophobe renal cell carcinomas (67%) tended to show a homogeneous enhancement whereas the clear cell renal cell carcinomas (85%) usually showed a heterogeneous enhancement (p<0.05). Statistical analysis revealed that the frequencies of the tumor spread pattern and calcification in the two subtypes didnot differ significantly (p>0.05). Conclusion: The CT findings of the chromophobe renal cell carcinomascompared to those of the clear cell renal cell carcinomas showed that there were mild enhancements in the corticomedullary phase, homogeneous enhancements, and well-demarcated margins.

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BRD7 Promoter Hypermethylation as an Indicator of Well Differentiated Oral Squamous Cell Carcinomas

  • Balasubramanian, Anandh;Subramaniam, Ramkumar;Narayanan, Vivek;Annamalai, Thangavelu;Ramanathan, Arvind
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.4
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    • pp.1615-1619
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    • 2015
  • Background: Promoter hypermethylation mediated gene silencing of tumor suppressor genes is considered as most frequent mechanism than genetic aberrations such as mutations in the development of cancers. BRD7 is a single bromodomain containing protein that functions as a subunit of SWI/SNF chromatin-remodeling complex to regulate transcription. It also interacts with the well know tumor suppressor protein p53 to trans-activate genes involved in cell cycle arrest. Loss of expression of BRD7 has been observed in breast cancers and nasopharyngeal carcinomas due to promoter hypermethylation. However, the genetic status of BRD7 in oral squamous cell carcinomas (OSCCs) is not known, although OSCC is one of the most common among all reported cancers in the Indian population. Hence, in the present study we investigated OSCC samples to determine the occurrence of hypermethylation in the promoter region of BRD7 and understand its prevalence. Materials and Methods: Genomic DNA extracted from biopsy tissues of twenty three oral squamous cell carcinomas were digested with methylation sensitive HpaII type2 restriction enzyme that recognizes and cuts unmethylated CCGG motifs. The digested DNA samples were amplified with primers flanking the CCGG motifs in promoter region of BRD7 gene. The PCR amplified products were analyzed by agarose gel electrophoresis along with undigested amplification control. Results: Methylation sensitive enzyme technique identified methylation of BRD7 promoter region seventeen out of twenty three (74%) well differentiated oral squamous cell carcinoma samples. Conclusions: The identification of BRD7 promoter hypermethylation in 74% of well differentiated oral squamous cell carcinomas indicates that the methylation dependent silencing of BRD7 gene is a frequent event in carcinogenesis. To the best of our knowledge, the present study is the first to report the occurrence of BRD7and its high prevalence in oral squamous cell carcinomas.

초 저 소비전력 및 저 전압 동작용 FULL CMOS SRAM CELL에 관한 연구

  • 이태정
    • The Magazine of the IEIE
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    • v.24 no.6
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    • pp.38-49
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    • 1997
  • 0.4mm Resign Rule의 Super Low Power Dissipation, Low Voltage. Operation-5- Full CMOS SRAM Cell을 개발하였다. Retrograde Well과 PSL(Poly Spacer LOCOS) Isolation 공정을 사용하여 1.76mm의 n+/p+ Isolation을 구현하였으며 Ti/TiN Local Interconnection을 사용하여 Polycide수준의 Rs와 작은 Contact저항을 확보하였다. p-well내의 Boron이 Field oxide에 침적되어 n+/n-well Isolation이 취약해짐을 Simulation을 통해 확인할 수 있었으며, 기생 Lateral NPN Bipolar Transistor의 Latch Up 특성이 취약해 지는 n+/n-wellslze는 0.57mm이고, 기생 Vertical PNP Bipolar Transistor는 p+/p-well size 0.52mm까지 안정적인 Current Gain을 유지함을 알 수 있었다. Ti/TiN Local Interconnection의 Rs를 Polycide 수준으로 낮추는 것은 TiN deco시 Power를 증가시키고 Pressure를 감소시킴으로써 실현할 수 있었다. Static Noise Margin분석을 통해 Vcc 0.6V에서도 Cell의 동작 Margin이 있음을 확인할 수 있었으며, Load Device의 큰 전류로 Soft Error를 개선할수 있었다. 본 공정으로 제조한 1M Full CMOS SRAM에서 Low Vcc margin 1.0V, Stand-by current 1mA이하(Vcc=3.7V, 85℃기준) 를 얻을 수 있었다.

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The Cytotoxic Mechanisms of Bacillus thuringiensis $\delta$-endotoxin, a Bioinsecticide : Effect on $K^+$ Channel of Insect Cell Lines.

  • Seo, Young-Rok;Han, Sung-Sik;Yu, Yong-Man;Lee, Jun-Jae;Ryu, Jae-Chun
    • Proceedings of the Korea Society of Environmental Toocicology Conference
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    • 1996.12a
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    • pp.70-70
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    • 1996
  • The cytotoxicological effect of Bt 1-endotoxin, well-known as a bioinsecticide, was investigated on ion channel of insect cell lines. This study attempted to evaluted the specificity by simple experiment to measure the cell swelling using lepidopteran cell lines in isotonic solution containing only one cation. Cell swelling was stimulated in KCI-sucrose isotonic solution as well as TC-100 media containg in solubilized crystal 5-endotoxin. It suggested that the cell swelling by Bt toxin have a relation to K+ channel. The cell swelling may be due to the stimulation K+ influx and simultaneously the penetration of H2O induced by Bt toxin, because the stimulation of swelling was observed with the solubilized toxin in KCI-sucrose isotonic solution, but not in sucrose isotonic solution. Moreover the specific K+ channel blocker, such as 4-arnjnopyrimidine(4-AP) and ouabain, showed the significant effect on the cell swelling induced by Bt toxin. The increasement of the cell swelling induced by 4-AP suggested to be caused by the block of K+ efflux through K+ leak channels. The inhibition of cell swelling by ouabain, which is the well-known inhibitor of Na+, K+-ATPase, suggested to be due to decreasement of K+ influx following diminishment of Na+, K+-ATPase activities.

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Integumentary Ultrastructure of the Blenny, Pholis nebulosa (Teleostei: Pholidae) (베도라치 (Pholis nebulosa) 피부계의 미세구조)

  • LEE Jung Sick;An Cheul Min;HUH Sung-Hoi
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.33 no.2
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    • pp.148-152
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    • 2000
  • To provide basic information on the integumentary system of the blenny, Pholis nebulosa, ultrastructures of epidermal and dermal layer were examined by means of the light and transmission electron microscope. The skin of the blenny consisted of epidermal and dermal layer. Epidermal layer consisted of supporting cell and unicellular gland. The supporting cells were classified into superficial cell, intermediated cell and basal cell, and the gland cells were classified into mucous secretory cell and club cell. The cytoplasm of supporting cells was divided into cortex and medullar part. In the cortex and medullar part, microfilaments and cell organelles were well developed, respectively. Superficial cell of epidermal layer was cuboidal and contained nucleus of horseshoe shape. Intermediated cell had a nucleus of irregular form and the electron density was higher than the other supporting cells, Basal cell was columnar, but nucleus was situated in the upper cytoplasm. Cell organelles of the basal cell were poor than the other supporting cells, but membrane interdigitations were well developed. The cytoplasm of mucous secretory cell had a well-developed ovoid secretory granules, which reacted to red with AB-PAS reaction. The club cell had a we31-developed round secretory granules and endoplasmic reticulum. figment cells were classified into two type. The one contained pigment granules of electron dense, and the other contained reflecting platelets. The cytoplasm of fibrocyte had n well developed rough endoplasmic reticulum.

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Transgenesis and Germ Cell Engineering in Domestic Animals

  • Lee, C.K.;Piedrahita, J.A.
    • Asian-Australasian Journal of Animal Sciences
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    • v.16 no.6
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    • pp.910-927
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    • 2003
  • Transgenesis is a very powerful tool not only to help understanding the basics of life science but also to improve the efficiency of animal production. Since the first transgenic mouse was born in 1980, rapid development and wide application of this technique have been made in laboratory animals as well as in domestic animals. Although pronuclear injection is the most widely used method and nuclear transfer using somatic cells broadens the choice of making transgenic domestic animals, the demand for precise manipulation of the genome leads to the utilization of gene targeting. To make this technique possible, a pluripotent embryonic cell line such as embryonic stem (ES) cell is required to carry genetic mutation to further generations. However, ES cell, well established in mice, is not available in domestic animals even though many attempt to establish the cell line. An alternate source of pluripotent cells is embryonic germ (EG) cells derived from primordial germ cells (PGCs). To make gene targeting feasible in this cell line, a better culture system would help to minimize the unnecessary loss of cells in vitro. In this review, general methods to produce transgenic domestic animals will be mentioned. Also, it will focus on germ cell engineering and methods to improve the establishment of pluripotent embryonic cell lines in domestic animals.

Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation (MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결합제어)

  • 정희석;고무순;김대영;류한권;노재상
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.17-20
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    • 2000
  • This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

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Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation (MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어)

  • 정희석;고무순;김대영;류한권;노재상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.17-20
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    • 2000
  • This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

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