• Journal of Fisheries and Marine Sciences Education
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• v.25 no.1
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• pp.87-101
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• 2013

The purpose of this study was to analyze differences in psychological characteristics according to cell phone dependency and use purpose in cell phone users of adolescences. Psychological characteristics of adolescents were consisted of attention aggression, somatic symptoms, social withdrawal, depression variables. The subjects were 2,158 cell phone owned second graders of middle school. A data of the Korean Child-Youth Panel Survey(KCYPS) was employed for the this study. Dependency and use purpose of cell phone were classified by cluster analysis into four groups with similar characteristics : 'high dependency-multipurpose', 'low dependency-social', 'low dependency-unsocial' 'middle dependency-peer interaction' groups. Major findings were that: the group differences in psychological characteristics were statistically significant. The 'low dependency-social' group showed highest on adjustments, and the other groups were maladaptive. Finally, implications for future research were discussed.

• The Journal of Korean Society for School & Community Health Education
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• v.14 no.1
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• pp.1-12
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• 2013

Purpose: This study aimed to identify the influencing the effects of emotional characteristics of adolescents on cell phone addiction and to form the basis for the developments of programs to protect addictive cell phone use. Methods: The data of the Korean Child-Youth Panel Survey(KCYPS) was analyzed using the SPSS 18.0 program. Results: The influencing factors of the cell phone addiction were gender, attention, physical symptoms, depression, aggression, social withdrawal, games and entertainment, listening to music, text messages, call family and watching movies. The factors accounted for 30.6% of variance in cell phone addiction. Conclusions: These results suggest that cell phone addiction are influenced by emotional characteristics of adolescents. These results may contribute to development of programs to prevent cell phone addiction.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.639-643
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• 2001

Recently, photovoltaic system has been studied widely as a renewable energy system, because it does not produce environmental pollution and it has infinity energy source from the sun. A study on photovoltaic system has a lot of problems like as reappearance and repetition of some situation in the laboratory experiment for development of MPPT algorithm and islanding detection algorithm, because output characteristics of solar cell are varied by irradiation and surface temperature of solar cell. And this system is consisted a lot of solar cell unit. Therefore, the assistant equipment which emulates the solar cell characteristics which can be controlled arbitrarily by researcher is require to the researchers for reliable experimental data. In this paper, the virtual implement of solar cell (VISC) system is proposed to solve these problems and to achieve reliable experimental result on photovoltaic system. VISC system emulates the solar cell output characteristics, and this system can substitute solar cell in laboratory experiment system. To realize the VISC, mathematical model of solar cell is studied for driving converter and the DC/DC converters are compared in viewpoint of tracking error using computer simulation. And then analysis of parallel and series characteristics was done for combination of VISC model.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.369-372
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• 2001

We studied the electro-optical (EO) performance in the vertical-alignment (VA) - l/4$\pi$ cell photoaligned with polarized UV exposure on a homeotropic photopolymer surfaces. Excellent voltage-transmittance curve in the VA - l/4$\pi$ cell photoaligned with polarized UV exposure for 3 min on the photopolymer containing cholesterol group of 8% can be achieved. The V-T characteristics in the VA-l/4$\pi$ cell photoaligned on the photopolymer surface can be improved by increasing cholesteryl group. For response time measurement, the transmittance characteristics of the VA-l/4$\pi$ cell photoaligned on the photopolymer surface was better than that of the VA-l/4$\pi$ cell rubbingaligned on a polyimide(Pl) surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.670-674
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• 2001

The electro-optical (EO) performance in the vertical-alignment (VA) - 1/4$\pi$ cell photoaligned with polarized UV exposure on a homeotropic photopolymer surfaces was investigated. Excellent voltage-transmittance curve in the VA - 1/4$\pi$ cell photoaligned with polarized UV exposure for 3 min on the photopolymer containing cholesteryl group of 8% can be achieved. The V-T characteristics in the VA-1/4$\pi$ cell photoaligned on the photopolymer surface can be improved by increasing cholesteryl group. For response time measurement, the transmittance characteristics of the VA-1/4$\pi$ cell photopolymer surface was better than that of the VA-1/4$\pi$ cell rubbingaligned on a polyimide(PI) surface.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.224-229
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• 1996

Performance characteristics of single cell in phosphoric acid fuel cell were studied for various electrode fabrication parameters such as teflon content, electrode structure, thickness of electrocatalyst layer, platinum content and electrode area. The performance of single cell was decided from the measured voltage-current through a load change. The electrode of 40wt.% teflon exhibited high initial performance of single cell, but in the long term operation, the cell performance of 45 wt.% teflon was better. Also the single cell appeared good performance in case of electrodes with duplicate structure, thin electrocatalyst in thickness, more platinum content, and small area. These results of cell performance were discussed as related to the electrolyte flooding, formation of 3 phase boundary area, internal resistance of electrode, and microstructure of electrode.

• Journal of Digital Convergence
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• v.15 no.7
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• pp.415-424
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• 2017

The purpose of this study was to examine the relationship among public's risk characteristics, risk severity, risk perception and risk acceptability of human stem cell technology. The subjects were 300 Koreans selected. The data were analyzed by the exploratory factor analysis, confirmatory factor analysis, correlation analysis and structural equation modeing analysis. The results were as followed. First, public's risk characteristics on human stem cell technology influenced positively on risk severity. Second, public's risk characteristics on human stem cell technology influenced positively on risk perception. Third, public's risk severity on human stem cell technology influenced positively on risk perception. Fourth, public's risk characteristics on human stem cell technology influenced negatively on risk acceptability. Fifth, public's risk severity on human stem cell technology influenced not significantly on risk acceptability. Sixth, public's risk perception on human stem cell technology influenced not significantly on risk acceptability. These results will contribute to develop the risk communication strategy on the acceptability of human stem cell technology.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.910-914
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• 2007

Recently, a study on the energy conversion efficiency and up sizing' technology of dye-sensitized solar cell (DSC) which is focused in considering a new alternative solar cell has been executed. But consideration for the cell characteristics about an internal electronic flow on a large-scaled DSC has not been carried out yet. In this study, we have chosen a solar cell width as a variable of a large-scaled DSCs and confirmed electric characteristics of an individual cell. First, Pt counter electrode surface of DSC is deposited by RF sputtering methode and the electrochemical properties of Pt electrodes was investigated by cyclic -voltammetry. With the Pt electrode, we fabricated DSC samples of different width. As a result, the higher the internal resistance of DSC becomes, the wider the width gets. Internal resistance makes it difficult to collect photoelectron generated from dye. Ultimately up sizing DSC causes the increase of internal resistance and then has a bad effect on the cell characteristics.