• 한국세라믹학회지
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• 제41권11호
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• pp.793-796
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• 2004

Process Parameters were studied in synthesis of LiCoO$_2$ Powder by ultrasonic spray Pyrolysis. Concentration of the mixed solution influenced the size, shape, and yield of the synthesized powder. The yield was affected primarily by the height of the solution, and then by the flow rate of a carrier gas. The temperature of the reactor governed the crystallinity and morphology of the powder. LiCoO$_2$ powders were synthesized as a layered high temperature phase above 800$^{\circ}C$. The synthesized powders were sphere and secondary Particles consisted of primary particles of 55-70 nm. The secondary Particles became bigger from 0.28 to 1.43 $\mu\textrm{m}$ as the concentration of the solution was increased from 0.05 to 2.0 M. The 2.0 M solution provided the highest production rate.

• 한국세라믹학회지
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• 제34권2호
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• pp.131-138
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• 1997

희석기체로써 Ar 및 H2를 사용하여 MTS(CH3SiCl3)를 원료물질로 한 탄화규소막을 흑연 기판 위에 화학증착시켰다. 본 연구는 증착온도 130$0^{\circ}C$, 총압력은 10 torr 및 MTS와 원료 운반기체의 총유량은 100 sccm으로 일정하게한 상태에서, 각 희석기체의 첨가에 따른 성장거동의 변화를 고찰하고자 하였다. 증착속도는 희석기체와 상관없이 첨가량이 200sccm일 때 최대값을 갖는 모양을 보였으나, Ar을 첨가할 때가 H2에 비해 더 빠른 증착속도를 나타냈다. 이러한 증착속도 특성은 전체 증착속도가 물질전달 율속단계에 있을 때, 각 희석기체의 첨가에 따라 변화되는 경막 두께(boundary layer thickness) 및 원료물질 농도의 상관관계에 기인한다고 여겨졌다. 우선배향성은 Ar의 경우 모든 첨가량의 범위에서 (220)면으로 우선배향되었으나, H2의 경우에는 200sccm이상에서 첨가량에 비례하여 (111)면으로 우선배향되는 경향을 보였다. 표면미세구조는 Ar을 첨가한 경우에 일정하게 facet구조를 유지하였으나, H2의 경우에는 facet에서 평탄한(smooth)구조로 변화되었다. 표면조도의 경우 첨가량이 늘어남에 따라 지속적으로 Ar에서는 증가하였지만, H2에서는 감소하였다.

• Natural Product Sciences
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• 제20권4호
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• pp.243-250
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• 2014

A simple GC method with a FID detector was developed in order to determine two main compounds (${\beta}$-sitosterol and lupenone) for Adenophorae Radix. ${\beta}$-Sitosterol and lupenone were analyzed by the gradient thermal ramping method. Nitrogen was used as the carrier gas at 108 kPa. The flow rate of gas was 2.0 mL/min; $2{\mu}L$ of filtered sample was injected at a split ratio of 1 : 80. This method was fully validated with respect to linearity, precision, accuracy and robustness. Further, this GC-FID method was applied successfully in order to quantify two compounds in an Adenophorae Radix extract. The GC analytical method for classification analysis was performed by repeated analysis of 59 reference samples in order to differentiate between Adenophora triphylla var. japonica Hara and 14 Codonopsis lanceolata. The results indicate that the GC-FID method is suitable and reliable for the quality evaluation of Adenophorae Radix.

• 드라이브 ㆍ 컨트롤
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• 제21권1호
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• pp.8-15
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• 2024

This thesis investigates the jetting characteristics of an aerosol jet printing (AJP) process as a function of design and operating conditions. The governing equations of the AJP system are derived for experimentation and analysis. To understand the characteristics of the AJP system, it analyzes the jetting characteristics as a function of the flow rate of the carrier gas and the sheath gas, and the variation of the linewidth with the nozzle exit size based on particle tracking. The thesis focuses on computational fluid dynamics (CFD), which is a computer simulation. The particle tracking results obtained by CFD were analyzed using MATLAB. CFD analytical models can be analyzed in environments with different conditions and consider more specific situations than mathematical computational models. The validity of the CFD analysis is shown by comparing the experimental results with the CFD analysis.

• 드라이브 ㆍ 컨트롤
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• 제21권2호
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• pp.8-14
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• 2024

This paper investigates the jetting characteristics of an aerosol jet printing (AJP) process as a function of design and operating conditions. The governing equations of the AJP system are derived for experimentation and analysis. To understand the characteristics of the AJP system, this thesis analyzes the jetting characteristics as a function of the flow rate of the carrier gas and the sheath gas, and the variation of the linewidth with the nozzle exit size based on particle tracking. This thesis focuses on computational fluid dynamics (CFD), which is a computer simulation. The particle tracking results obtained by CFD were analyzed using MATLAB. CFD analytical models can be analyzed in environments with different conditions and consider more specific situations than mathematical computational models. The validity of the CFD analysis is shown by comparing the experimental results with the CFD analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• 한국초전도ㆍ저온공학회논문지
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• 제25권3호
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• pp.49-55
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• 2023

This paper presents the design of a re-liquefaction system as a BOG (boil-off gas) handling process in liquid hydrogen transport vessels. The total capacity of the re-liquefaction system was assumed to be 3 ton/day, with a BOR (boil-off rate) of 0.2 %/day inside the cargo. The re-liquefaction cycle was devised using the He-Brayton Cycle, incorporating considerations of BOG capacity and operational stability. The primary components of the system, such as compressors, expanders, and heat exchangers, were selected to meet domestically available specifications. Case studies were conducted based on the specifications of the components to determine the optimal design parameters for the re-liquefaction system. This encompassed variables such as helium mass flow rate, the number of compressors, compressor inlet pressure and compression ratio, as well as the quantity and composition of expanders. Additionally, an analysis of exergy destruction and exergy efficiency was carried out for the components within the system. Remarkably, while previous design studies of BOG re-liquefaction systems for liquid hydrogen vessels were confined to theoretical and analytical realms, this research distinguishes itself by accounting for practical implementation through equipment and system design.

• 한국안전학회지
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• 제30권1호
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• pp.8-13
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• 2015

The experimental design methodology was applied in the drop tube furnace (DTF) to predict the various combustion properties according to the operating conditions and to assess the coal plant safety. Response surface method (RSM) was introduced as a design of experiment, and the database for RSM was set with the numerical simulation of DTF. The dependent variables such as burnout ratios (BOR) of coal and $CO/CO_2$ ratios were mathematically described as a function of three independent variables (coal particle size, carrier gas flow rate, wall temperature) being modeled by the use of the central composite design (CCD), and evaluated using a second-order polynomial multiple regression model. The prediction of BOR showed a high coefficient of determination (R2) value, thus ensuring a satisfactory adjustment of the second-order polynomial multiple regression model with the simulation data. However, $CO/CO_2$ ratio had a big difference between calculated values and predicted values using conventional RSM, which might be mainly due to the dependent variable increses or decrease very steeply, and hence the second order polynomial cannot follow the rates. To relax the increasing rate of dependent variable, $CO/CO_2$ ratio was taken as common logarithms and worked again with RSM. The application of logarithms in the transformation of dependent variables showed that the accuracy was highly enhanced and predicted the simulation data well.

• 공업화학
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• 제18권2호
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• pp.136-141
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• 2007

본 연구에서는 열플라즈마를 이용하여 클로로메탄 즉 사염화탄소($CCl_4$), 삼염화탄소($CCl_3H$), 이염화탄소($CCl_2H_2$)를 분해하는 실험을 수행하였으며 열플라즈마분해공정의 특성에 대한 연구를 진행하였다. Factsage program을 이용하여 열역학적 평형조성을 알아보았으며, 또한 Gas chromatography를 이용하여 농도, 캐리어 가스의 유량 및 quenching 속도등 세가지 변수의 변화에 따른 분해율을 살펴보았다. 실험 결과 92%이상의 높은 분해율을 얻었다. FT-IR을 이용하여 최종 생성물을 확인한 결과 중성 분위기에서는 주로 카본, 염소, 염화수소가 생성되었고 산화 분위기에서는 카본의 생성이 억제되었으며 주로 이산화탄소, 염화수소, 염소가 생성되었다. FT-IR생성물에 대한 분석과 Factsage program에 의한 온도 분포 별 생성된 라디칼 및 기타 입자의 종류와 결부하여 이에 따른 분해 메커니즘에 대해 알아보았다. 분해 경로는 주로 라디칼에 의한 산화반응과 전자 부착에 의한 분해 반응으로 이루어짐을 확인하였다.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.