Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of Alpha-Ga2O3 Template Grown by Halide Vapor Phase Epitaxy

HVPE 방법으로 성장한 Alpha-Ga2O3의 특성 분석

  • Son, Hoki (Korea Institute of Ceramic Engineering & Technology) ;
  • Ra, Yong-Ho (Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Young-Jin (Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Mi-Jai (Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Jin-Ho (Korea Institute of Ceramic Engineering & Technology) ;
  • Hwang, Jonghee (Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Sun Woog (Korea Institute of Ceramic Engineering & Technology) ;
  • Lim, Tae-Young (Korea Institute of Ceramic Engineering & Technology) ;
  • Jeon, Dae-Woo (Korea Institute of Ceramic Engineering & Technology)
  • Received : 2018.03.07
  • Accepted : 2018.04.23
  • Published : 2018.09.01
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Abstract

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

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References

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