• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.8.2-8.2
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.51-52
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• 1993

• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.584-587
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• 1998

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2267-2271
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• 2011

This study was focused on getting p-type copper-oxide thin-film semiconductors suitable for p-channel thin-film transistors. Vacuum thermal evaporation and thermal annealing were used to get copper-oxide thin-film semiconductor having properties adoptable as an active layer of thin-film transistors. n-type thin films having electron carrier density of about $10^{22}\;cm^{-3}$ before thermal annealing was converted to p-type thin films having hole carrier density of about $10^{16}\;cm^{-3}$ as the thermal annealing conditions were optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.288-293
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• 2013

Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.69-76
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• 1997

P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

• International Journal of Industrial Entomology and Biomaterials
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• v.27 no.2
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• pp.312-316
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• 2013

Caffeine is a thermogenic agent that can be used in weight loss products. In order to achieve a sustained release of caffeine, silk fibroin (SF) film was uses as carrier. It has been shown that the loading method of caffeine into SF film affected the uniform distribution of caffeine in the SF film. When caffeine was added directly into SF solution, gelation has been occurred immediately and prevented the uniform distribution of caffeine. On the other hand, caffeine was dissolved in methanol in order to load the caffeine in SF film and crystallize the SF film at the same time. However, due to the fast evaporation of methanol, caffeine was recrystallized on the surface of SF film rather than penetrating into the film. Finally, caffeine was loaded into pre-crystallized SF film and uniform distribution of caffeine could be achieved. There was an initial burst of caffeine during the first 15 min, but after that a sustained release was achieved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.271-272
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• 2007

Displacement current $(I_{dis})$ and drain-to-source current $(I_{DS})$ are evaluated using the simultaneous measurements of source $(I_S)$ and drain $(I_D)$ currents during the application of a constant drain voltage and a triangular-wave gate voltage $(V_{GS})$ to top-contact pentacene thin-film transistors.