• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.20-23
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• 2012

In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/$SiO_2$ interface. The improved gate oxide quality also results in the longer hot carrier life time.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1612-1620
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• 2003

This papers describes a nonlinear transfer function modelling of designed GaAs FET power amplifier by measured and simulated values of designed PA amplifier for multi­carrier transmission system, With the results of PA nonlinearity characteristic, we can estimates AM­AM and AM­PM of designed PA. According to the estimated nonlinear characteristics, we can analysis the ACPR of PA for spectral regrowth, the error vector measurement(EVM) of constallation signals and bit error rate of QPSK and 64­QAM. The suggested nonlinear modelling results are used to get an accurate estimate of digital characteristics between PA amplifier and wireless multi­carrier transmission system using OFDM.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.87.1-87.1
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• 2017

High functional catalyst to efficiently produce clean and earth-abundant renewable fuels plays a key role in securing energy sustainability and environmental protection of our society. Hydrogen has been considered as one of the most promising energy carrier as represented by focused research works on developing catalysts for the hydrogen evolution reaction (HER) from the water hydrolysis over the last several decades. So far, however, the major catalysts are expensive transition metals. Here using first principles density functional theory (DFT) calculations we screen various pyrites for HER by identifying fundamental descriptor governing the catalytic activity. We enable to capture a strong linearity between experimentally measured exchange current density in HER and calculated adsorption energy of hydrogen atom in the pyrites. The correlation implies that there is an underlying design principle tuning the catalytic activity of HER.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.574-579
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• 1999

A counter-flow type horizontal reactor of metal organic chemical vapor deposition was designed with the Reynolds and the Rayleigh numbers of Re = 4.5 and Ra = 215.8, respectively. The GaN thin films were grown and characterized by Hall measurement, double crystal X-ray diffraction analysis and photoluminescence measurement. The Si and Mg were also used for doping of GaN films. The dislocation density of $2.6{\times}10^8/\textrm {cm}^2$ was included in GaN films representing the geometrical lattice mismatch between sapphire substrates and GaN films. The Si doped n-GaN films provide the electron carrier density and mobility in the regions of $10^{17}~10^{18}/\textrm{cm}^3$ and 200~400 $\textrm{cm}^2$/V .sec, respectively. Mg doped p-GaN films were post-annealed and activated with the hole carrier density of $8{\times}10^{17}/{\textrm}{cm}^3$.

• Textile Coloration and Finishing
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• v.29 no.4
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• pp.247-255
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• 2017

Scutellaria Baicalensis(SB) is widely used in traditional and modern oriental medicine. It possesses several biology activities such as anti-oxidative, anti-inflammatory, antimicrobial and antiviral activities. In this study, a functional high density polyethylene (HDPE) fabric with antimicrobial properties was developed using zeolite microparticles as a SB extract delivery carrier. Zeolites loaded with SB extract were prepared by immersing in an SB extract aqueous solution. The average size of the SB extract-loaded zeolites was about 0.1 to $2.0{\mu}m$, and the morphology of the zeolites was not altered after SB extract binding. The resulting SB extract-loaded zeolites were then immobilized homogeneously onto the HDPE fabric using acrylic binder. The encapsulation efficiency of SB extract to the zeolite was more than 45%. The in vitro release test of SB extract-loaded zeolites containing HDPE fabrics showed release of 35% of the total SB extract by day 1 in a 24hours immersion study. Moreover, the SB extract-loaded zeolites containing HDPE fabrics showed effective antimicrobial activity against Streptococcus mutans, Staphylococcus aureus, and Klebsiella pneumoniae, indicating that this innovative delivery platform potently imparted antimicrobial activity to the HDPE fabric. In conclusion, the current study suggests that the HDPE fabric containing the SB extract-loaded zeolites microparticle carrier system has potential as an effective antimicrobial textile such as safety gloves, protective gloves etc.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.38 no.4
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• pp.33-38
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• 2001

Readout signal of high density DVD-RAM disk output was simulated to analyze the effect of crosserase and crosstalk to the readout signal which is one of the main difficulties to realize high density DVD-RAM system having single side recording density of 4.7 G13 and 15 G13 media. Laser beam intensity impinged on the disk was approximated as Gaussian and recorded marks were assumed elliptical and the readout signal was calculated as a two dimensional convolution of laser beam pattern and recored mark pattern. From the readout signal obtained by varying crosserase ratio, carrier levels with period of 3T to 11 T were calculated and compared. Jitter due to crosserase and crosstalk was calculated and compared using 1,000 random marks having 3T to 11T period. The results showed that the jitter due to crosserase turned out to be smaller than the jitter due to crosstalk.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.59-62
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• 2014

Minority carrier diffusion length is one of the most important parameters of solar cells, especially for short circuit current density (Jsc). In this report, we proposed the calculating method of the minority carrier diffusion length ($L_n$) in CIGS solar cells through biased quantum efficiency (QE). To verify this method's reliability, we chose two CIGS samples which have different grain size and calculated $L_n$ for each sample. First of all, we calculated out that $L_n$ was 56nm and 97nm for small and large grain sized-cell through this method, respectively. Second, we found out the large grain sized-cell has about 7 times lower defect density than the small grain sized-cell using drive level capacitance profiling (DLCP) method. Consequently, we confirmed that $L_n$ was mainly affected by the micro-structure and defect density of CIGS layer, and could explain the cause of Jsc difference between two samples having same band gap.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.230.1-230.1
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• 2016

본 연구에서는 Host-Dopant system 기반 적색 인광 OLED의 Emitting layer(EML)에서 doping 위치에 따른 특성 변화를 분석하였다. EML은 host 물질로 60 nm 두께의 CBP를 사용하고, 적색 발광을 위해 10 %의 $Ir(btp)_2$를 CBP의 Front, Middle, Back side에 각각 20 nm씩 doping하였다. 본 구조의 적색 인광 OLED는 current density, luminance, efficiency, EL spectrum 등을 통해 전기적, 광학적 특성 변화를 확인하였다. Front, Back side에 doping으로 인한 CBP의 Energy level이 3.6 eV에서 1.9 eV로 감소하여 각각 HTL/EML, EML/HBL의 경계에 carrier direct injection이 활성화 되었고, 이로 인한 charge balance의 저하를 확인하였다. EL spectrum결과 각 소자는 CBP의 618 nm 파장 외에도, 추가적으로 TPBi의 398 nm, NPB의 456 nm의 파장을 보였다. 이를 통해 doping 위치에 따라 exciton이 형성되는 recombination zone이 이동하고 있음을 확인하였고, Front side는 6 V의 인가전압에서는 발광 파장이 398 nm에서 높은 값을 보이나 8 V, 10 V, 12 V에서 618 nm에서 높은 값을 보이는 것으로 인가전압에 의해 recombination zone이 HTL쪽으로 이동되는 것 또한 확인하였다.