• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• KSBB Journal
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• v.18 no.5
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• pp.412-417
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• 2003

We first investigated basic characteristics of reticulated polyurethane (PU) foams as microbial carriers. In general, the specific surface area of PU foams increases with respect to decreasing pore sizes. However, the number of microbes adhered on the unit surface of reticulated PU foams decreases with respect to decreasing pore sizes. Thus, as a result of totally considering all effects such as apparent density, hydrolysis rate, and adhesion, we can know that PU foams with 45 PPI is the most appropriate microbial carrier. In this study, we can also investigate the effect of various physico-chemical surface treatments on the adhesion of microbes on the surface of PU foams. We used a chitosan treatment, a PEI (Polyethylene Imine) treatment, a xanthane treatment and a plasma treatment. As a result of comparing all surface treatments, the plasma surface treatment was the best.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.111-112
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• 2005

To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of radiological science and technology
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• v.28 no.4
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• pp.267-272
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• 2005

The effects of As addition in amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, jsc in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.262-266
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• 2007

Polycrystalline $Mn_xFe_{3-x}O_4$ thin films were synthesized on Si(100) substrates using sol-gel method and the effects of Mn substitution on the structural, magnetic, and magnetotransport properties were analyzed. X-ray diffraction revealed that cubic structure is maintained up to x = 1.78 with increasing lattice constant for increasing x. Such increase of the lattice constant is attributable to the substitution of $Mn^{2+}$ (with larger ionic radius) ions into tetrahedral $Fe^{3+}$(with smaller ionic radius) sites. VSM measurements revealed that $M_s$ does not vary significantly with x, qualitatively explainable by comparing spin magnetic moments of Mn and Fe ions. On the other hand, $H_c$ was found to decrease with increasing x, attributable to the decrease of magnetic anisotropy due to the decrease of $Fe^{2+}$ density through $Mn^{2+}$ substitution. Magnetoresistance (MR) of the $Mn_xFe_{3-x}O_4$ films was found to decrease with increasing x. Analysis of the MR data in comparison with the VSM results gives an indication of the tunneling of spin-polarized carriers through the grain boundaries of the polycrystalline samples at low external field and spin-flip of the carriers at high external field.

• Analytical Science and Technology
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• v.25 no.5
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• pp.265-272
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• 2012

Okamoto cavity was modified to generate high power (2.45 GHz, 2 kW) He, N2 and Ar plasmas with WR-340 waveguide. Many factors which influence to the plasma generation were optimized and investigated for the spectroscopic properties of the He plasma generated. Some of the important factors are the diameter of the inner conductor, the distance between the inner and outer conductors and the distance between the tip of the inner conductor and the torch. After optimization for the He, two torches (a commercial mini torch for ICP and a tangential flow torch made locally) were compared and showed similar results for the helium plasma gas flow of 25 L/min~30 L/min. A tall torch (extended) was used to block the air in-flow and reduced the background intensity at 340 nm region (NH band). Emission intensity was measured for determination of halogen element in the aqueous solution with power and carrier gas flow rate. Electron number density and the excitation temperature were on the order of $3.67{\times}10^{11}/cm^3$ and 4,350 K, respectively. These values are similar or a bit smaller than other microwave plasmas. It has been possible to analyze aqueous samples. The detection limit for Cl (479.45 nm) was obtained to be 116 mg/L and needs analytical optimization for the better performance.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.131-139
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• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.