• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.36 no.9B
• /
• pp.1039-1048
• /
• 2011

Carrier Ethernet, which extend The algorithm based on constructing the mixed topology and performing link stretching, MT/s, has been proposed for designing cost-efficient Carrier Ethernet in optical network with multi-line-rate. However, the MT/s algorithm has high blocking ratio because the wavelength capacity is fully allocated without considering the load balance of network. In this paper, we propose an efficient mixed topology configuration (EMTC) algorithm by modifying MT/s algorithm. In order to reduce blocking ratio, we adapt a threshold for each link to restrict the link utilization so that traffic load can be distributed over whole network. We also apply the EMTC algorithm into optical hybrid switched network to evaluate the availability of our algorithm for different applications. The performance of the EMTC algorithm is compared with that of MT/s algorithm through OPNET simulation. The simulation results show that our algorithm achieve lower blocking ratio than the MT/s algorithm. Moreover, in hybrid switched network, our algorithm performs better than MT/s algorithm in terms of packet loss ratio and end-to-end delay.

• Proceedings of the Optical Society of Korea Conference
• /
• 2007.02a
• /
• pp.195-196
• /
• 2007

• Journal of Information Display
• /
• v.3 no.2
• /
• pp.6-12
• /
• 2002

In order to achieve white emission from organic light emitting devices (OLEDs), five distinct structures were fabricated and tested. The white emission was obtained using two different color-emitting materials (yellow from rubrene-doped $Alq_3$ and blue from DPVBi) with or without a carrier-blocking layer. For enhancing the red emission, two types of devices with three-color emitting materials were fabricated. The white emission, close to the CIE coordinate of (0.3,0.3), was achieved by using two blocking layers as well that as without a blocking layer. This paper covers the subject of controlling the location of exciton recombination zone. It has been found that there is a trade-off in that the devices with three color emitting layers do not show as much luminescence efficiency compared to those with two color emitting layers, but rather, show distinct red emission in the resultant emission spectra. The highest power efficiency was measured to be 1.15lm/W at 2,000 $cd/m^2$ for a structure with two color-emitting layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.292-295
• /
• 2004

The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.9 no.5
• /
• pp.498-506
• /
• 2004

The protection algorithm of DC line grounding for the subway is proposed in this paper. Compared to the conventional protection algorithm, the proposed algorithm has a advantage that can distinguish the difference between service line and faulted line. The contents of the proposed algorithm are by using blocking filter and PLC(Power Line Carrier). Results of the simulation show that the proposed algorithm is very useful.

• Journal of the Korean Vacuum Society
• /
• v.8 no.3A
• /
• pp.207-212
• /
• 1999

Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

• Current Optics and Photonics
• /
• v.4 no.4
• /
• pp.380-390
• /
• 2020

In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

• Proceedings of the IEEK Conference
• /
• 2000.06a
• /
• pp.37-40
• /
• 2000

As the number of CDMA subscribers increases, CDMA systems utilize more than one CDMA carrier In order to accommodate Increasing capacity requirement. In this paper, we present a new analytical method for evaluating the Erlang capacity of CDMA systems with multiple CDMA carriers. in the case of the algorithm proposed in 〔5〕, the calculation complexity for evaluating the call blocking probability Is increased proportionally to the sixth power of the number of used CDMA carriers when the CDMA system supports voice and data services. Consequently, It is Impractical to calculate Erlang capacity with the algorithm of 〔5〕especially when the number of used CDMA carriers is larger than 3. To resolve this problem, we propose a new analytical method for evaluating the Erlang capacity. The calculation complexity of the proposed method for evaluating call blocking probability is increased just proportionally to the second power of the number of used CDMA carriers when the CDMA systems support voice and data services.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1046-1049
• /
• 2006

We proposed a simplified fabrication structure and method which can provide separate Red (R), Green (G), Blue (B), and White (W) OLED pixels with 2 metal-mask changes in emitting layer fabrication inspired from the structure of multi-layer white OLED and carrier blocking mechanism. A red emission layer for the R and W pixel with 1st mask, and then a blue emission layer with hole blocking layer for the B and W pixel with 2nd mask, and finally a common green emission layer were deposited sequentially. We expect that this concept would be very useful to the actual fabrication of multi-color OLED display although additional optimization is needed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.190.2-190.2
• /
• 2014

We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.