• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.45 no.5
• /
• pp.21-29
• /
• 2008

This paper proposes a carrier frequency of set estimation algorithm for IEEE802.11n system. As IEEE802.11n is a multiple input multiple output(MIMO) system, so there are several combining techniques which are used in multiple receive antenna system. In this paper, we propose hybrid carrier frequency offset estimation algorithms using combining techniques in multiple receive antenna systems, and show that the proposed selection combining carrier frequency offset (CFO) estimation algorithm can estimate carrier frequency offset within 1/10 MSE error at SNR 10 dB in channel B and within 1/2 MSE error at SNR 10 dB in channel D rather than the conventional MIMO CFO one.

• Clean Technology
• /
• v.24 no.1
• /
• pp.63-69
• /
• 2018

The reduction reaction characteristics and physicochemical properties were studied for the selection of oxygen carrier, which is the core of the chemical looping combustion (CLC) technology. Fuel conversion and $CO_2$ selectivity of oxygen carrier according to the concentration of reducing gas and the reduction temperature using three kinds of oxygen carrier (SDN70, N018-R2, N016-R4) were measured and compared. In addition, Attrition Index (AI) and BET surface area were measured to analyze the attrition resistance and the surface characteristics of the oxygen carrier. As a result, it was confirmed that all three kinds of oxygen carrier were suitable for use in chemical roofing combustion system, and the best particle was determined to be N016-R4.

• Environmental Engineering Research
• /
• v.22 no.2
• /
• pp.210-215
• /
• 2017

Produced water is the largest wastestream of oil and gas exploration. It consists of various organic and inorganic compounds that hinder its beneficial use. This study compared the treatment of produced water in a batch suspended and biofilm activated sludge process. The biofilm carrier material was made from Gardenia Carinata shell. COD, $NH_4{^+}-N$ and $NO_3-N$ removal was monitored in both the suspended (control) and floating carrier bioreactors. The results show a rapid reduction of produced water constituents in the floating carrier bioreactor. COD, $NH_4{^+}-N$ and $NO_3-N$ removal was in the range of 99%, 98% and 97% for the floating carrier bioreactor whereas it was 88%, 84% and 83% for the control bioreactor. The rapid reduction of COD, $NH_4{^+}-N$ and $NO_3-N$ clearly indicate that the floating carrier materials served as an attached growth medium for microorganisms, improved the breakdown of produced water constituents and reduced inhibition of microbial metabolic activities.

• Clean Technology
• /
• v.8 no.3
• /
• pp.167-172
• /
• 2002

The adaptability of earthworm casts produced form the waste sludge of pulp and paper plants for a biocarrier used in the advanced wastewater treatment was investigated. Removal efficiencies of nutrients in the activated sludge technology without carrier were compared with those treated with carrier made of casts under the different conditions such as the composition of the input and kinds of carrier. When the waste water was treated in the activated sludge technology without carriers, removal efficiencies of T-P and T-N were average values of 31% and 52%, respectively. On the contrary, pellet type carrier and pack type carrier increased the removal efficiencies of T-P and T-N by 1.3~1.4 and 1.9~2.0 times, respectively. At the same time, the high removal of T-P and T-N were observed irrespective of the types of carrier in which many kinds of microorganisms were grown. The difference in the removal efficiencies of BOD and COD between the treatment with and without carrier was negligible. According to this research, the carrier made of casts was thought to be highly applicable in the advanced wastewater treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.215-219
• /
• 2004

This paper is investigated about the effect of carrier gas and humidity for generating hydrogen gas. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with no humidity and humidity 45[%], the generation of hydrogen gas is decreased with increasing the humidity. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small particle produced from humidifier.

• Journal of Powder Materials
• /
• v.20 no.1
• /
• pp.24-32
• /
• 2013

The effect of carrier gases (He, $N_2$) on the properties of Ti coating layers were investigated to manufacture high-density Ti coating layers. Cold spray coating layers manufactured using He gas had denser and more homogenous structures than those using $N_2$ gas. The He gas coating layers showed porosity value of 0.02% and hardness value of Hv 229.1, indicating more excellent properties than the porosity and hardness of $N_2$ gas coating layers. Bond strengths were examined, and coating layers manufactured using He recorded a value of 74.3 MPa; those manufactured using $N_2$ gas had a value of 64.6 MPa. The aforementioned results were associated with the fact that, when coating layers were manufactured using He gas, the powder could be easily deposited because of its high particle impact velocity. When Ti coating layers were manufactured by the cold spray process, He carrier gas was more suitable than $N_2$ gas for manufacturing excellent coating layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.11
• /
• pp.1246-1251
• /
• 2004

This paper is investigated about the effect of carrier gas type and the humidity for generating hydrogen gas. The vibration of the water surface is more powerful with increasing applied voltage. In this experimental reactor which is made of multi-needle and plate, the maximum acquired hydrogen production rate is about 3500 ppm. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with water droplet by humidifier and without water droplet by humidifier, the generation of hydrogen gas is decreased in case of water droplet by humidifier. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small water molecular produced from humidifier.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.2
• /
• pp.182-187
• /
• 1988

Hot carrier induced device degradation characteristics under DC bias stress have been investigated in n-MOSFETs with channel length of 1.2,1.8 um, and compared with those of LDD structure device with same channel length. Based on these results, the device lifetime in normal operating bias(Vgs=Vds=5V) is evaluated. The lifetimes of conventional and LDD n-MOSFET with channel length of 1.2 um are estimated about for 17 days and for 12 years, respectively. The degradation rate of LDD n-MOSFET under the same stress is the lowest at n-region implnatation dose of 2.5E15 cm-\ulcorner while the substrate current is the lowest at the dose of 1E13cm-\ulcorner Thses results show that the device degradation characteristics are basic measurement parameter to find optimum process conditions in LDD devices and evaluate a reliability of sub-micron device.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.429-429
• /
• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Journal of the Korea Society for Simulation
• /
• v.17 no.2
• /
• pp.13-19
• /
• 2008

New Buffered deposition is proposed to decrease junction electric field in this paper. Buffered deposition process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New Buffered deposition structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of Buffered deposition and conventional. Also, we design a test pattern including NMOSFET, PMOSFET, LvtNMOS, High pressure N/PMOSFET, so that we can evaluate DC/AC hot carrier degradation on-chip. As a result, we obtained 10 years hot carrier life time satisfaction.