• Title/Summary/Keyword: carbon doping

Search Result 190, Processing Time 0.029 seconds

Study on the characteristics of transition metals for TSSG process of SiC single crystal (SiC 단결정의 TSSG 공정을 위한 전이금속 특성 연구)

  • Lee, Seung-June;Yoo, Yong-Jae;Jeong, Seong-Min;Bae, Si-Young;Lee, Won-Jae;Shin, Yun-Ji
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.32 no.2
    • /
    • pp.55-60
    • /
    • 2022
  • In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900℃ under Ar atmosphere. The used melt composition is based on either Si-Ti 10 at% or Si-Cr 30 at%, and also Co or Sc transition metals, which are effective for carbon solubility, were added at 3 at%, respectively. After the experiment, the crucible was cross-sectionally cut, and evaluated the Si-C reaction layer on the crucible-melt interface. As a result, with Sc addition, Si-C reaction layers uniformly occurred with a Si-infiltrated layer (~550 ㎛) and a SiC interlayer (~23 ㎛). This result represented that the addition of Sc is an effective transition metal with high carbon solubility and can feed carbon sources into the melt homogeneously. In addition, Sc is well known to have low reactivity energy with nitrogen compared to other transition metals. Therefore, we expect that both growth rate and Nitrogen UID can be controlled by Si-Sc based melt in the TSSG process.

“Aluminium Nitride Technology-a review of problems and potential"

  • Dryburgh, Peter M.
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1996.06a
    • /
    • pp.75-87
    • /
    • 1996
  • This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

  • PDF

Influence of the Heat-treatment Temperature on the Critical Properties of $C_4H_6O_5$-doped $MgB_2/Fe$ Wire ($C_4H_6O_5$ 도핑된 $MgB_2/Fe$ 선재의 임계특성에 대한 열처리 온도의 영향)

  • Jun, Byung-Hyuk;Kim, Jung-Ho;Dou, Shi Xue;Kim, Chan-Joong
    • Progress in Superconductivity
    • /
    • v.9 no.1
    • /
    • pp.62-67
    • /
    • 2007
  • The effects of the heat-treatment temperature on the carbon (C) substitution amount, full width at half maximum (FWHM) value, critical temperature ($T_c$), critical current density ($J_c$) have been investigated for 10 wt % malic acid ($C_4H_6O_5$)-doped $MgB_2/Fe$ wires. All the samples were fabricated by the in-situ powder-in-tube (PIT) method and heat-treated within a temperature range of $650^{\circ}C$ to $1000^{\circ}C$. As the heat-treatment temperature increased, it seemed that the lattice distortion was increased by a more active C substitution into the boron sites from the malic acid addition. These increased electron scattering defects seemed to enhance the $J_c-H$ properties in spite of an improvement in the crystallinity, such as a decrease of the FWHM value and an increase of the $T_c$. Compared to the un-doped wire heat-treated at $650^{\circ}C$ for 30 min, the $J_c$ was enhanced by the C doping in a high-field regime. The wire heat-treated at $900^{\circ}C$ resulted in a higher magnetic $J_c$ of approximately $10^4\;A/cm^2$ at 5 K and 8 T.

  • PDF

Photoreduction of Carbon Dioxide using Graphene Oxide-Titanium Oxide Composite (그래핀 옥사이드와 이산화티타늄 조합을 이용한 이산화탄소의 광환원)

  • Lee, Myung-Kyu;Jang, Jun-Won;Park, Sung-Jik;Park, Jae-Woo
    • Journal of Korean Society on Water Environment
    • /
    • v.32 no.1
    • /
    • pp.46-51
    • /
    • 2016
  • In this study, we synthesized a combination of graphene oxide (GO) and titanium dioxide (TiO2) and confirm that GO can be used for CO2 photoreduction. TiO2 exhibited highly efficient combination with other conventional electric charges generated by these paration phenomenon for suppression of hole-electron recombination. This improved the efficiency of CO2 photoreduction. The synthetic form of GO-TiO2 used in this study was agraphene sheet surrounded by TiO2 powder. Efficiency and stability were enhanced by combination of GO and TiO2. In a CO2 photoreduction experiment, the highest CO conversion rate was 0.652 μmol/g·h in GO10-TiO2 (2.3-fold that of pure TiO2) and the highest CH4 production rate was 0.037 μmol/g·h in GO0.1-TiO2 (2.4-fold that of pure TiO2). GO enhances photocatalytic efficiency by functioning as a support and absorbent, and enabling charge separation. With increasing GO concentration, the CH4 level decreases to~45% due to decreased transfer of electrons. In this study, TiO2 together with GO yielded a different result than the normal doping effect and selective CO2 photoreduction.

Visible Light-based Photocatalytic Degradation by Transition Metal Oxide (전이 금속 산화물을 이용한 가시광선 기반 광촉매 분해)

  • Lee, Soomin;Park, Yeji;Lee, Jae Hun;Patel, Rajkumar
    • Membrane Journal
    • /
    • v.29 no.6
    • /
    • pp.299-307
    • /
    • 2019
  • Photocatalysis is an environment friendly technique for degrading organic dyes in water. Tungsten oxide is becoming an active area of research in photocatalysis nanomaterials for having a smaller bandgap than the previously favored titanium dioxide. Synthesis of hierarchical structures, doping platinum (Pt), coupling with nanocomposites or other semiconductors are investigated as valid methods of improving the photocatalytic degradation efficiency. These impact the reaction by creating a redshift in the wavelength of light used, effecting charge transfer, and the formation/recombination of electron-hole pairs. Each of the methods mentioned above are investigated in terms of synthesis and photocatalytic efficiency, with the simplest being modification on the morphology of tungsten oxide, since it does not need synthesis of other materials, and the most efficient in photocatalytic degradation being complex coupling of metal oxides and carbon composites. The photocatalysis technology can be incorporated with water purification membrane by modularization process and applied to advanced water treatment system.

Application of Graphene in Photonic Integrated Circuits

  • Kim, Jin-Tae;Choe, Seong-Yul;Choe, Chun-Gi
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.196-196
    • /
    • 2012
  • Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

  • PDF

Reduced graphene oxide field-effect transistor for biomolecule detection and study of sensing mechanism

  • Kim, D.J.;Sohn, I.Y.;Kim, D.I.;Yoon, O.J.;Yang, C.W.;Lee, N.E.;Park, J.S.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.431-431
    • /
    • 2011
  • Graphene, two dimensional sheet of sp2-hybridized carbon, has attracted an enormous amount of interest due to excellent electrical, chemical and mechanical properties for the application of transparent conducting films, clean energy devices, field-effect transistors, optoelectronic devices and chemical sensors. Especially, graphene is promising candidate to detect the gas molecules and biomolecules due to the large specific surface area and signal-to-noise ratios. Despite of importance to the disease diagnosis, there are a few reports to demonstrate the graphene- and rGO-FET for biological sensors and the sensing mechanism are not fully understood. Here we describe scalable and facile fabrication of rGO-FET with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}1$-antichymotrypsin (PSA-ACT) complex, in which the ultrathin rGO sensing channel was simply formed by a uniform self-assembly of two-dimensional rGO nanosheets on aminated pattern generated by inkjet printing. Sensing characteristics of rGO-FET immunosensor showed the highly precise, reliable, and linear shift in the Dirac point with the analyte concentration of PSA-ACT complex and extremely low detection limit as low as 1 fg/ml. We further analyzed the charge doping mechanism, which is the change in the charge carrier in the rGO channel varying by the concentration of biomolecules. Amenability of solution-based scalable fabrication and extremely high performance may enable rGO-FET device as a versatile multiplexed diagnostic biosensor for disease biomarkers.

  • PDF

Fabrication of Zn-treated ACF/TiO2 Composites and Their Photocataytic Activity for Degradation of Methylene Blue

  • Go, Yu-Gyoung;Zhang, Feng-Jun;Chen, Ming-Liang;Oh, Won-Chun
    • Korean Journal of Materials Research
    • /
    • v.19 no.3
    • /
    • pp.142-150
    • /
    • 2009
  • In this paper, non-treated ACF (Activated Carbon Fiber) /$TiO_2$ and Zn-treated ACF/$TiO_2$ were prepared. The prepared composites were characterized in terms of their structural crystallinity, elemental identification and photocatalytic activity. XRD patterns of the composites showed that the non-treated ACF/$TiO_2$ composite contained only typical single and clear anatase forms while the Zn-treated ACF/$TiO_2$ contained a mixed anatase and rutile phase with a unique ZnO peak. SEM results show that the titanium complex particles are uniformly distributed on and around the fiber and that the titanium complex particles are more regularly distributed on and around the ACF surfaces upon an increase of the $ZnCl_2$ concentration. These EDX spectra show the presence of peaks from the C, O and Ti elements. Moreover, peaks of the Zn element were observed in the Zn-treated ACF/$TiO_2$ composites. The prominent photocatalytic activity of the Zn-treated ACF/$TiO_2$ can be attributed to the three different effects of photo-degradation: doping, absorptivity by an electron transfer, and adsorptivity of porous ACFs between the Zn-$TiO_2$ and Zn-ACF.

Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$ ($CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성)

  • 손정환;김동욱;홍성철;권영세
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.12
    • /
    • pp.51-59
    • /
    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

  • PDF

Conducting Polymers with Functional Dopants and their Applications in Energy, Environmental Technology, and Nanotechnology

  • Kim, Sung Yeol;Song, Hyun-Kon
    • Clean Technology
    • /
    • v.21 no.1
    • /
    • pp.12-21
    • /
    • 2015
  • Development of novel conducting polymers (CPs) is expected to facilitate the advancement of functional materials used for energy, environmental, and nanotechnology. Recent research efforts are focused on doping CPs with functional dopants to enhance their performance or add additional functions that are not inherent in CPs. This review surveys literatures about the doped CPs focusing on the roles of functional dopants, unlike other reviews focusing on the development of new conducting polymer backbones. The functional dopants presented in this review include redox active molecules, carbon nanomaterials, biopolymers, and chelating molecules. Depending on the dopants and their physicochemical properties, the doped CPs can be used for a variety of applications such as polymer batteries, membranes for waste water treatment, and chemical sensors. A major challenge of the CPs is presented and the ways to overcome the challenge is also suggested for the future development of stable, high performance CPs.