• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.384-389
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• 2015

In this paper, we fabricated ceramic body and sapphire wafer in order to develop a hydraulic pressure sensor with high sensitivity and high temperature stability. The sapphire wafer was adopted with a membrane of capacitance ceramic pressure sensor. The capacitance value of the sensor for the finite element analysis(FEM) showed a linear pressure characteristics. Membrane was processed with a diameter of 32.4 mm and a thickness of 1 mm by using alumina powders. Ceramic body was processed with a diameter 32.4 mm and a thickness 5 mm. The capacitance pressure sensor was made with high heat treatment of the ceramic body and the sapphire wafer. Initially capacitance of the pressure sensor was 50 pF and a capacitance of 110 pF was measured from 5 bar pressure. Output voltage of 5 V was appeared at 5 bar pressure.

• Journal of information and communication convergence engineering
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• 제13권4호
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• pp.257-263
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• 2015

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at V_DS = -80 V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.103-104
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• 2000

Voltage transfer curves have been used for analyzing the micro-discharge characteristics of cells in ac-PDP. This paper deals with the effect of working gas species, pressure and frequency of applied voltage on the micro-discharge characteristics. Using the mixture gases of He+Xe or He+Ne+Xe, wall voltage steeply varied compared with only He gas, and also voltage margin increased. Discharge voltage and voltage margin increased with increasing Xe percentage, and also wall voltage more steeply varied. In addition, the variation of effective wall capacitance which is significantly dependent on the discharge strength is discussed.

• 한국진공학회지
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• 제3권1호
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• pp.71-76
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• 1994

The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 춘계학술대회 논문집
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• pp.1003-1007
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• 2002

Micro-EDM is generally used far machining micro 3-D structure. For micro-EDM, first of all, micro-electrode fabrication is needed and WEDG system is proposed for tool electrode fabrication method. When tool electrode is fabricated using WEDG system, its characteristics are under the control of many EDM parameters. Also relations between the parameters affect electrode fabrication. In this study, experiments are carried out to analyze effects of EDM parameters on micro-electrode fabrication. Experimental method and analysis are used to experimental design method. Factors used in experiments are composed of applied voltage, capacitance, wire feed rate, spindle rotating speed, machining time. As a result of experiments, wire feed rate, machining time and capacitance is proportional to gap distance(material removal), the other parameters(applied voltage, spindle rotating speed) and relations between the parameters have little influence on machining.

• 한국정밀공학회지
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• 제23권3호
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• pp.69-75
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• 2006

In this paper, micro electrical discharge milling using deionized water as dielectric fluid was investigated. In EDM, dielectric fluid is an important factor which affects machining characteristics. When deionized water was used as dielectric fluid, machining characteristics were investigated according to voltage, capacitance, and resistivity of deionized water. Machining gap increased with increasing voltage and capacitance. As the resistivity of deionized water decreased, the machining gap increased. The wear of a tool electrode and machining time can be reduced by using deionized water instead of EDM oil. Surface roughness was also improved when deionized water was used.

• 대한기계학회논문집A
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• 제31권11호
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• pp.1053-1058
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• 2007

Micro-EDM technology (or the manufacture of miniature parts is used to make a micro hole. Two electrode shaping methods, mechanical electrode grinding and WEDG technique, have been studied. In this study, an electrode shaping method by using previously machined hole is introduced in order to obtain an optimal hole-making condition. Key factors such as applied voltage, capacitance, feedrate, and hole-dimension have an influence on the fabricating error of electrode shaping, which are taper ratio of a hole, electrode form accuracy, and electrode surface. Therefore, we try to investigate the optimal fabricating of electrode shaping from various experiments. Results from experiments, it was able to minimize the electrode fabricating error as voltage increases, and also applied feedrate and capacitance decreases.

• 한국정밀공학회지
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• 제16권10호
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• pp.94-100
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• 1999

Micro-EDM is widely used in machining of miro-parts such as micro-shafts and micro-holes. In order to select proper machining conditions and to reduce the machining time, it is necessary to understand machining characteristics under various machining conditions. Micro-hole machining tests were performed with round shape electrodes with different capacitances and voltages of the power source. The effects of the electrode rotational speed and diameter on the machining rate were also observed. From the experimental results, it was found that capacitance and voltage have significant effects on machining rate and the machined surface integrity. With higher capacitance and higher voltage, higher machining rate was observed together with poorer surface integrity. The electrode diameter was also found to have an effect on the machining rate and electrode wear.