• ETRI Journal
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• 제32권4호
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• pp.520-529
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• 2010

In this paper, we present a low-voltage low-dropout voltage regulator (LDO) for a system-on-chip (SoC) application which, exploiting the multiplication of the Miller effect through the use of a current amplifier, is frequency compensated up to 1-nF capacitive load. The topology and the strategy adopted to design the LDO and the related compensation frequency network are described in detail. The LDO works with a supply voltage as low as 1.2 V and provides a maximum load current of 50 mA with a drop-out voltage of 200 mV: the total integrated compensation capacitance is about 40 pF. Measurement results as well as comparison with other SoC LDOs demonstrate the advantage of the proposed topology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.137-140
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• 2003

Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.107-111
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• 2022

In this paper, a plastic film type submersion sensor capable of measuring submersion speed was developed. This submersion sensor is designed as a capacitive type, and it is a sensor that outputs the change in capacitance between the electrode of the submersion sensor and the grounded body as a voltage through a C-V(capacitance-voltage) converter. We developed an submersion sensor in which two electrodes of different lengths are connected in parallel to measure the submersion speed accurately by minimizing the influence of noise such as contamination. When both electrodes of the submersion sensor are exposed to water, the rate of change of water level suddenly increases, so the submersion speed is measured by measuring the time to this point. Since the difference in length between the two electrodes of the submersion sensor does not change in any case, it is possible to accurately measure the submersion speed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1402-1404
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• 2009

The silicon nitride films for gate dielectric were deposited by catalytic chemical vapor deposition at low temperature (${\leq}200^{\circ}C$). The mixture of $SiH_4$, $NH_3$ and $H_2$ was used as source gases. The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the films were measured. The breakdown voltage and the flat band voltage shift of samples were improved by increase of the $NH_3$ contents and $H_2$ dilution ratio. The defect states were analyzed by photoluminescence (PL) spectra. As the defect states decreased, the breakdown voltage and the flat band voltage shift increased.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.895-900
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• 2000

In this paper, C-V characteristics based on the structure of GaAs MESFET’s has been proposed with wide range of applied voltages and temperatures. Small signal capacitance; gate-source and gate-drain capacitances are represented by analytical expressions which are classified into two different regions; linear and saturation regions with bias voltages. The expression contains two variables; the built-in voltage( $V_{vi}$ )and the depletion width(W). Submicron gate length MESFETs has been selected to prove the validity of the theoretical perdiction and shows good agreement with the experimental data over the wide range of applied voltages.

• 전기학회논문지
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• 제57권7호
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• pp.1229-1234
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• 2008

In this work, ultra high-voltage (17 - 50 kV AC), reliable 80 pF mica capacitors for partial discharge system application were investigated. Mica was used as the dielectric of the capacitors. Using the conservative design rule, over 3 individual $50\;{\mu}m$ thick mica sheets with a size of 30mm{\times}35mm were used with lead foils to form a parallel capacitor element and 20 mica sheets were interleaved with lead foils to form a series stack of parallel capacitor element to meet the requirements of the capacitors. The dimensions of the fabricated 80 pF capacitors for 17 kV AC and 50 kV AC were $90\;mm{\times}90\;mm$ and $95\;mm{\times}180\;mm$, respectively. The high-frequency characteristics of the capacitance (C) and dissipation factor (D) of the developed capacitors were measured using a capacitance meter. The developed capacitors exhibited C of 79.5 - 87.5 pF, had D of 0.001% over the frequency ranges of 150 kHz to 50 MHz, had a self-resonant frequency of 65 MHz, and showed results comparable to those measured for the capacitors prepared recently by $Adwel^{Tm}$. The developed capacitors also showed excellent characteristics for thermal shock test and temperature cycling test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.84-87
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• 2003

Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.

• 대한전자공학회논문지SD
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• 제39권9호
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• pp.62-71
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• 2002

본 논문에서는 용량형 압력센서의 비선형성 문제를 해결하기 위한 적분형 C-V 변환기를 제안하였다. 이 변환기는 스위치 커패시터 적분기와 스위치 커패시터 차동증폭기로 구성되어 있으며 인가된 압력에 반비례하는 센서용량을 전압으로 변환하여 선형적으로 출력한다. 제안된 적분형 C-V 변환기는 PSPICE 시뮬레이션에서 초기 전극간격의 90%에 해당하는 큰 변위에 대해서 0.01%/FS 이하의 매우 낮은 비선형도와 오프셋 용량 및 기생용량에 둔감한 우수한 특성을 보였다. 또한 센서신호처리의 필수기능인 오프셋 보정 및 이득조정이 적분형 C-V 변환기에서 용이하게 구현됨을 보였다.

• 한국진공학회지
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• 제11권4호
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• pp.230-234
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• 2002

고온 급속 열처리를 행한 $LiNbO_3Si$/(100) 구조를 가지고 여러 가지 전극을 사용하여 금속/강유전체/반도체 커패시터를 제작하였으며, 제작한 커패시터의 비휘발성 메모리 응용 가능성을 확인하였다. MFS 커패시터의 C-V 특성 곡선에서는 LiNbO$_3$박막의 강유전성으로 인한 히스테리시스 특성이 관측되었으며, 1 MHz C-V 특성 곡선의 축적 영역에서 산출한 비유전율은 약 25 이었다. Pt 전극을 사용하여 제작한 커패시터에서는 인가 전계 500 kV/cm 범위에서 $1\times10^{-8}$ A/cm 이하의 우수한 누설전류 특성이 나타났다. midgap 부근에서의 계면 준위 밀도는 약 $10^{11}\textrm{cm}^2$.eV 이었으며, 잔류분극 값은 약 1.2 $\muC/\textrm{cm}^2$ 였다. Pt 전극과 A1 전극 모두 500 kHz 주파수의 바이폴러 펄스를 인가하면서 측정한 피로 특성에서 $10^{10}$ cycle 까지 측정된 잔류 분극 값이 초기 값과 같았다.